Mr. Jeremy Bonsall Profile

Jeremy Bonsall

at Aerospace Corp

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Publications (2)

Proceedings Article | 1 March 2019 Paper

Electrical and structural characteristics of aged RF GaN HEMTs and irradiated high-power GaN HEMTs with protons and heavy ions

Yongkun Sin, Dmitry Veksler, Jeremy Bonsall, Scott Sitzman, Miles Brodie, Zachary Lingley, Brendan Foran

Proceedings Volume 10918, 109181B (2019) https://doi.org/10.1117/12.2507016

KEYWORDS: Field effect transistors, Gallium nitride, Transmission electron microscopy, Reliability, Strain analysis, Radiation effects, Amplifiers

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Proceedings Article | 16 February 2017 Paper

Electrical characteristics of high-power AlGaN-GaN high electron mobility transistors irradiated with protons and heavy ions

Yongkun Sin, Jeremy Bonsall, Zachary Lingley, Miles Brodie, Maribeth Mason

Proceedings Volume 10104, 101041B (2017) https://doi.org/10.1117/12.2250250

KEYWORDS: Field effect transistors, Gallium nitride, Transmission electron microscopy, Reliability, Radiation effects, Transistors, Solid state electronics, Amplifiers, Silicon carbide, Diodes

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