The issues regarding structure design and fabrication in improving the performance of MVGs are discussed. Although using (111) Si wafer with existing HARM process is appropriate, some limitations on design and fabrication still exist. This study proposes a novel BELST process that can improve the device performance as well as fabrication capability of the existing techniques. The salient features of the process are described, and various design concepts have been demonstrated from the fabrication results. According to the result, MVGs with desired shape and thickness can easily be obtained using the developed BELST process.
Presently, the torsional actuator has gained a lot of attentions among the area of micro actuators. Because the torsional actuator can not carry a substantial mechanical loading in the out-of-plane direction, it is frequently used in some optical or electrical applications such as light modulators and spatial scanner devices. However, the performance of torsional actuator is limited to the fabrication process and operating conditions. For instance, it is difficult to fabricate a torsional actuator with both large rotating angle and big size moving plate. A novel electrostatically driven torsional actuator is proposed in this paper. The torsional actuator is fabricated through the integration of surface and bulk micromachining processes. Thus the goal of fabricating a torsional actuator with a cavity right beneath the edge of the moving plate is reached. In addition, special design of the driving electrode is also available in this research. The advantage of the proposed design is to increase the traveling distance of the actuator as well as to increase the area of the moving plate. In short, the proposed design provides the possibility of increasing the size of moving plates without reducing its rotating angle. Therefore, the applications of the torsional actuator, such as image scanner and positioner, are widened.
A new surface passivation technique using P2S5/(NH4)2S on GaAs Schottky barrier diodes formed by Au and Al contacts was investigated, and the results are compared with those of (NH4)2Sx-treated devices. With this new surface treatment, the effective barrier heights for both Al- and Au-GaAs Schottky diodes were found to vary with the work function of metals, which is clear evidence of the lower surface state density in these diodes. Results of I-V measurements shows that P2S5/(NH4)2S-passivated diodes have lower reverse leakage current and higher effective barrier height than that of the (NH4)2Sx-treated diodes. We also utilized RTA annealing and successive sulfurization to identify the characteristics of the sulfide film. Results show that the anneal at 250 degree(s)C to certain extent destroys the Ga-S (and/or As-S) bonding. Auger Electron Spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and Raman scattering measurements are done to characterize the surface compositions and surface band bending.
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