Mr. Jesse Dylan Crossno Profile

Jesse Dylan Crossno

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PROCEEDINGS ARTICLE | February 9, 2009

A narrowband plasmonic terahertz detector with a monolithic hot electron bolometer

Proc. SPIE. 7215, Terahertz Technology and Applications II

KEYWORDS: Bolometers, Plasmonics, Plasmons, Quantum wells, Modulation, Sensors, Terahertz radiation, Field effect transistors, Millimeter wave sensors, Temperature metrology

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We have fabricated and characterized plasmonic terahertz detectors that integrate a voltage controlled planar barrier with a grating gated GaAs/AlGaAs high electron mobility transistor. These detectors exhibit a narrowband, tunable plasmonic response. Substantially increased responsivity is achieved by introducing an independently biased, narrow gate that produces a lateral potential barrier adjacent to the drain when biased to pinch-off. DC electrical characterization in conjunction with bias-dependent terahertz responsivity and time constant measurements indicate that a hot electron bolometric effect is the dominant response mechanism over a broad range of experimental conditions. The temperature dependence of the bolometric response is consistent with the energy relaxation time and absorption coefficient of a 2DEG. Rectification resulting from non-linear current-voltage characteristics also appears to contribute to the response. Additionally, we have begun investigating the operation of this device with the full grating gate biased to pinch-off to produce many detection elements in series.

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