Dr. Jhuma Saha Profile

Dr. Jhuma Saha

Assistant Professor at Indian Institute of Technology Gandhinagar

SPIE Involvement:

Author

Publications (25)

Proceedings Article | 13 March 2024 Poster + Paper

Green synthesis derived carbon nano-particles from Syzygium cumini and Ocimum tenuiflorum

Parul Singh, Sreelakshmi Nair, Ancelina Jose, Charli Kaushal, Subramanian Sankaranarayanan, Jhuma Saha

Proceedings Volume 12858, 128580E (2024) https://doi.org/10.1117/12.3002797

KEYWORDS: Nanoparticles, Carbon, FT-IR spectroscopy, Biomedical applications, Ultraviolet radiation, Statistical analysis, Crystals, Absorption spectrum, Spectroscopy, Scanning electron microscopy

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Proceedings Article | 10 March 2023 Poster + Paper

Impact of linear alloy on strain coupled bilayer InAs/GaAs1-ySby quantum dot heterostructures

Ravindra Kumar, Jhuma Saha, Subhananda Chakrabarti

Proceedings Volume 12415, 124150N (2023) https://doi.org/10.1117/12.2648919

KEYWORDS: Heterojunctions, Alloys, Quantum dots, Indium arsenide, Emission wavelengths, Gallium arsenide, Antimony

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Proceedings Article | 3 October 2022 Poster + Presentation + Paper

A comparative analysis of InAs quantum dot heterostructure with equal and varying sub-capping layer thickness using digital alloy approach

Ravindra Kumar, Ajay Kumar, Jhuma Saha, Subhananda Chakrabarti

Proceedings Volume 12200, 122000E (2022) https://doi.org/10.1117/12.2633322

KEYWORDS: Indium arsenide, Heterojunctions, Interfaces, Quantum dots, Gallium arsenide, Diffusion, Analog electronics, Optoelectronics, Indium gallium arsenide, Electrons

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Proceedings Article | 18 April 2021 Presentation + Paper

Effect of GaAs1-xNx capping layer on the strain profile and emission PL wavelength of InAs quantum dot heterostructures using digital alloy approach

Ravindra Kumar, Jhuma Saha, Subhananda Chakrabarti

Proceedings Volume 11771, 117710S (2021) https://doi.org/10.1117/12.2589218

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Proceedings Article | 8 March 2021 Poster + Paper

The electronic interaction between vertically coupled Stranski-Krastanov and submonolayer quantum dots: a detailed investigation of carrier transitions and correlation with improved NIR energy conversion efficiency

Debabrata Das, Samishta Choudhary, Debiprasad Panda, Jhuma Saha, Subhananda Chakrabarti

Proceedings Volume 11681, 1168112 (2021) https://doi.org/10.1117/12.2578990

KEYWORDS: Quantum dots, Near infrared, Energy conversion efficiency, Solar energy, Solar cells, Photons, Quantum efficiency, Photovoltaics, Energy harvesting, Carrier dynamics

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Proceedings Article | 5 March 2021 Poster + Paper

Variation of In-concentration in barrier material of SK on SML quantum dot heterostructures and its impact on the strain and emission wavelength

Ravindra Kumar, Jhuma Saha, Subhananda Chakrabarti

Proceedings Volume 11680, 116801K (2021) https://doi.org/10.1117/12.2578597

KEYWORDS: Heterojunctions, Indium arsenide, Telecommunications, Short wave infrared radiation, Quantum dots, Luminescence, Gallium arsenide

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Proceedings Article | 5 March 2021 Poster + Paper

Optimization of InAs dot-in-well structure for superior structural and optical performance

Debiprasad Panda, Anuja Singh, Ajay Kumar, Jhuma Saha, Subhananda Chakrabarti

Proceedings Volume 11680, 116801M (2021) https://doi.org/10.1117/12.2583388

KEYWORDS: Indium arsenide, Heterojunctions, Quantum dots, Mid-IR, Absorption, Quantum well infrared photodetectors, Photodetectors, Oscillators, Optical properties, Luminescence

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Proceedings Article | 21 August 2020 Poster + Paper

Bilayer self-assembled InAs QD using digital alloy capping layer approach: experiment and theory

Ravindra Kumar, Jhuma Saha, Debiprasad Panda, Ravinder Kumar, Sanowar Alam Gazi, Raveesh Gourishetty, Subhananda Chakrabarti

Proceedings Volume 11465, 114651A (2020) https://doi.org/10.1117/12.2568820

KEYWORDS: Indium arsenide, Gallium arsenide, Interfaces, Quantum dots, Indium gallium arsenide, Heterojunctions, Luminescence

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Proceedings Article | 21 August 2020 Poster + Paper

Effect of ex-situ annealing on coupled hybrid InAs Stranski-Krastanov (SK) on Submonolayer (SML) Quantum Dot heterostructures with different spacer layer thickness

Samishta Choudhary, Jhuma Saha, Debiprasad Panda, Debabrata Das, Subhananda Chakrabarti

Proceedings Volume 11465, 114651E (2020) https://doi.org/10.1117/12.2569012

KEYWORDS: Annealing, Indium arsenide, Heterojunctions, Quantum dots, Gallium arsenide, Luminescence, X-ray diffraction, Optoelectronics

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Proceedings Article | 21 August 2020 Poster + Paper

A comparative study of analog and digital alloy technique of InxGa1-xAs well material on InAs/InGaAs DWELL heterostructures

Ravindra Kumar, Jhuma Saha, Subhananda Chakrabarti

Proceedings Volume 11465, 114651B (2020) https://doi.org/10.1117/12.2568836

KEYWORDS: Heterojunctions, Indium arsenide, Indium gallium arsenide, Indium, Quantum dots, Optoelectronics, Interfaces

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Proceedings Article | 1 April 2020 Presentation + Paper

Study on optical properties and strain distribution of InAs/InGaAs sub-monolayer quantum dot heterostructure with multiple stacking layers

Saranya Reddy Shriram, Sanowar Alam Gazi, Ravindra Kumar, Jhuma Saha, Debiprasad Panda, Arjun Mandal, Subhananda Chakrabarti

Proceedings Volume 11345, 113452X (2020) https://doi.org/10.1117/12.2555871

KEYWORDS: Gallium arsenide, Heterojunctions, Quantum dots, Optical properties, Raman spectroscopy, Phonons, Indium arsenide, Luminescence, X-ray diffraction

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Proceedings Article | 1 April 2020 Presentation + Paper

Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures

Saranya Reddy Shriram, Ravindra Kumar, Sanowar Alam Gazi, Jhuma Saha, Debiprasad Panda, Arjun Mandal, Subhananda Chakrabarti

Proceedings Volume 11345, 113452W (2020) https://doi.org/10.1117/12.2555864

KEYWORDS: Indium gallium arsenide, Gallium arsenide, Indium arsenide, Heterojunctions, Quantum dots, Gallium, Optical properties, Indium, Arsenic, Interfaces

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Proceedings Article | 1 April 2020 Presentation + Paper

Investigation of InAs quantum dots grown on the Ge substrate without migration enhance epitaxy layer

Ravinder Kumar , Debiprasad Panda, Jhuma Saha, Suryansh Dongre, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11345, 113452V (2020) https://doi.org/10.1117/12.2554181

KEYWORDS: Gallium arsenide, Germanium, Indium arsenide, Quantum dots, Silicon, Epitaxy

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Proceedings Article | 1 April 2020 Presentation + Paper

A comparative analysis of analog and digital alloy technique of InxGa1-xAs capping material on InAs quantum dot heterostructures

Ravindra Kumar, Jhuma Saha, Subhananda Chakrabarti

Proceedings Volume 11345, 113452Z (2020) https://doi.org/10.1117/12.2555916

KEYWORDS: Heterojunctions, Indium arsenide, Indium, Quantum dots, Crystals, Gallium arsenide, Indium gallium arsenide, Interfaces, Analytical research

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Proceedings Article | 1 April 2020 Presentation + Paper

Effect of varying facet angle on the strain and energy band profile of InAs QD heterostructures

Ravindra Kumar, Jhuma Saha, Subhananda Chakrabarti

Proceedings Volume 11345, 113452Y (2020) https://doi.org/10.1117/12.2555912

KEYWORDS: Heterojunctions, Indium arsenide, Quantum dots, Interfaces, Luminescence, Gallium arsenide, Optoelectronics

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Proceedings Article | 2 March 2020 Paper

Optical and structural behaviour of InAs quantum dots grown on the Si substrate without Si-Ge graded layer and without migration enhanced epitaxy layer

Ravinder Kumar, Debiprasad Panda, Jhuma Saha, Suryansh Dongre, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11291, 112910Z (2020) https://doi.org/10.1117/12.2546384

KEYWORDS: Silicon, Gallium arsenide, Quantum dots, Indium arsenide, Epitaxy, Germanium

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Proceedings Article | 2 March 2020 Paper

A comparative analysis between heterogeneously coupled Stranski-Krastanov (SK) on Submonolayer (SML) and Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot heterostructures

Samishta Choudhary, Jhuma Saha, Debiprasad Panda, Debabrata Das, Subhananda Chakrabarti

Proceedings Volume 11291, 112910Y (2020) https://doi.org/10.1117/12.2546336

KEYWORDS: Heterojunctions, Gallium arsenide, Indium arsenide, Quantum dots, Optoelectronics, X-ray diffraction, Quantum wells, Luminescence

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Proceedings Article | 2 March 2020 Presentation + Paper

Investigations on heterogeneously coupled Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot heterostructures with higher (0.1ML/sec) and lower (0.05ML/sec) growth rates

Samishta Choudhary, Jhuma Saha, Debiprasad Panda, Debabrata Das, Suryansh Dongre, Subhananda Chakrabarti

Proceedings Volume 11291, 1129104 (2020) https://doi.org/10.1117/12.2546367

KEYWORDS: Quantum dots, Heterojunctions, Gallium arsenide, Indium arsenide, Optoelectronics, X-ray diffraction, Optoelectronic devices, Luminescence

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Proceedings Article | 9 September 2019 Paper

Influence of quaternary (In0.21Al0.21Ga0.58As) capping on the performance of InAs quantum dot infrared photodetector

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Jhuma Saha, Binita Tongbram, Subhananda Chakrabarti

Proceedings Volume 11085, 110851K (2019) https://doi.org/10.1117/12.2529887

KEYWORDS: Quantum dots, Gallium arsenide, Indium arsenide, Photodetectors, Infrared radiation, Heterojunctions, Aluminum, Gallium

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Proceedings Article | 9 September 2019 Paper

Improved carrier confinement and strain profile in heterogeneously coupled SK-SML quantum dot heterostructure

Rajkumar RamaVath, Pravin Raut, Jhuma Saha, Subhananda Chakrabarti

Proceedings Volume 11085, 1108516 (2019) https://doi.org/10.1117/12.2528886

KEYWORDS: Quantum dots, Heterojunctions, Statistical analysis, Indium arsenide, Optical properties, Gallium, Indium gallium arsenide, Gallium arsenide

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Proceedings Article | 9 September 2019 Paper

Investigation of various capping layer configuration on heterogeneously coupled SML on SK quantum dots heterostructure

Pravin Raut, Rajkumar Ramavath, Jhuma Saha, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Proceedings Volume 11085, 1108517 (2019) https://doi.org/10.1117/12.2528893

KEYWORDS: Gallium, Heterojunctions, Aluminum, Quantum dots, Gallium arsenide, Bismuth, Photodetectors, Optoelectronic devices, Luminescence, Near infrared

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Proceedings Article | 3 September 2019 Paper

Grain boundary modeling and simulation of ZnO thin film transistor and its correlation with UV ozone annealing

Abhishek Tanpure, Md Jawaid Alam, Punam Murkute, Sushama Sushama, Jhuma Saha, Subhananda Chakrabarti

Proceedings Volume 11089, 1108928 (2019) https://doi.org/10.1117/12.2530325

KEYWORDS: Zinc oxide, Interfaces, Silicon, Doping, Thin films, Transistors, Annealing, Ultraviolet radiation, Oxides, Modeling and simulation

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Proceedings Article | 28 May 2019 Presentation + Paper

MBE-grown InGaAs/GaAs quantum-dots on Ge substrate: An idea towards optoelectronic integration on silicon

Raman Kumar, Ravinder Kumar, Debiprasad Panda, Jhuma Saha, Binita Tongbram, Debabrata Das, Sourabh Upadhyay, Arka Chatterjee, Samir Kumar Pal, Subhananda Chakrabarti

Proceedings Volume 10929, 109290C (2019) https://doi.org/10.1117/12.2508464

KEYWORDS: Heterojunctions, Germanium, Gallium arsenide, Quantum dots, Silicon, Optical properties, Optoelectronics integration, Luminescence, Optoelectronic devices

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