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Dr. Jia Wang
at Beijing Univ of Posts and Telecommunications
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Publications (1)
Proceedings Article | 5 December 2011 Paper
The influence of graded InxGa1-xAs on strain distribution and the band gap in the InAs/GaAs quantum dots
Xia Zhang, Yongqing Huang, Xiaomin Ren, Jia Wang, Xin Guo, Qi Wang
Proceedings Volume 8198, 81980K (2011) https://doi.org/10.1117/12.921319
KEYWORDS: Quantum dots, Indium arsenide, Gallium arsenide, Crystals, Optical properties, Finite element methods, Indium, Indium gallium arsenide, Gallium, Optical communications
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