Dr. Jian Ma Profile

Dr. Jian Ma

Manager of Product Engineering and Management at Intel Corp

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Publications (7)

Proceedings Article | 24 March 2006 Paper

Development of an automated multiple-target mask CD disposition system to enable new sampling strategy

Jian Ma, Jeff Farnsworth, Larry Bassist, Ying Cui, Bobby Mammen, Ramaswamy Padmanaban, Venkatesh Nadamuni, Muralidhar Kamath, Ken Buckmann, Julie Neff, Phil Freiberger

Proceedings Volume 6152, 61521K (2006) https://doi.org/10.1117/12.654326

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Optical proximity correction, Metrology, Optical lithography, Process control, Scanning electron microscopy, Manufacturing, Process modeling

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Traditional mask critical dimension (CD) disposition systems with only one or two targets is being challenged by the new requirements from mask-users as the wafer process control becomes more complicated in the newer generation of technologies. Historically, the mask shop does not necessarily measure and disposition off the same kind of CD structures that wafer fabs do. Mask disposition specifications and structures come from the frame-design and the tapeout, while wafer-level CD dispositions are mainly based on the historical process window established per CD-skew experiments and EOL (end of line) yield. In the current high volume manufacturing environment, the mask CDs are mainly dispositioned off their mean-to-target (MTT) and uniformity (6sigma) on one or two types of pre-determined structures. The disposition specification is set to ensure the printed mask will meet the design requirements and to ensure minimum deviation from them. The CD data are also used to adjust the dose of the mask exposure tools to control CD MTT. As a result, the mask CD disposition automation system was built to allow only one or two kinds of targets at most. In contrast, wafer-fabs measure a fairly wide range of different structures to ensure their process is on target and in control. The number of such structures that are considered critical is increasing due the growing complexity of the technology. To fully comprehend the wafer-level requirements, it is highly desirable to align the mask CD sample site and disposition to be the same as that of the wafer-fabs, to measure the OPC (optical proximity correction) structures or equivalent whenever possible, and to establish the true correlation between mask CD measurements vs. wafer CD measurement. In this paper, the development of an automated multiple-target mask CD disposition system with the goal of enabling new sampling strategy is presented. The pros and cons of its implementation are discussed. The new system has been inserted in the production of Intel's 65 nm technologies and has become the POR (plan of record) for the future technologies that are being developed.

Proceedings Article | 15 March 2006 Paper

Alt- phase-shift mask technology for 65nm logic applications

Kishore Chakravorty, Sven Henrichs, Wei Qiu, Joas Chavez, Yi-Ping Liu, Firoz Ghadiali, Karmen Yung, Nathan Wilcox, Mary Silva, Jian Ma, Ping Qu, Brian Irvine, Henry Yun, Wen-Hao Cheng, Jeff Farnsworth

Proceedings Volume 6154, 61540M (2006) https://doi.org/10.1117/12.654691

KEYWORDS: Quartz, Photomasks, Manufacturing, Etching, Optical lithography, Logic, Critical dimension metrology, Phase shifts, Optical proximity correction, Reticles

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Proceedings Article | 5 November 2005 Paper

Optical DC overlay measurement in the 2nd level process of 65 nm alternating phase shift mask

Jian Ma, Ke Han, Kyung Lee, Yulia Korobko, Mary Silva, Joas Chavez, Brian Irvine, Sven Henrichs, Kishore Chakravorty, Robert Olshausen, Mahesh Chandramouli, Bobby Mammen, Ramaswamy Padmanaban

Proceedings Volume 5992, 59921P (2005) https://doi.org/10.1117/12.632160

KEYWORDS: Overlay metrology, Neodymium, Quartz, Chromium, Photomasks, Tolerancing, Phase shifts, Etching, Scanning electron microscopy, Optical testing

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Proceedings Article | 28 June 2005 Paper

Second level exposure for phase shift mask applications using an SLM-based DUV mask writer

Mahesh Chandramouli, Bob Olshausen, Yulia Korobko, Sven Henrichs, Ping Qu, Jian Ma, Bruce Auches, Damon Cole, Thomas Ostrom, Angela Beyerl, Robert Eklund, Raoul Zerne, Peter Goransson, Magnus Persson, Tom Newman

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617359

KEYWORDS: Neodymium, Photomasks, Spatial light modulators, Deep ultraviolet, Electron beam lithography, Optical alignment, Quartz, Optical lithography, Chromium, Critical dimension metrology

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Proceedings Article | 6 December 2004 Paper

Reduction of radial CD errors and Cr loading effects in 90-nm binary NCAR mask process through chrome etch DOE

Jian Ma, Chaoyang Li, Larry Bassist, Matthew Pekney, Nathan Wilcox, Jeff Farnsworth, Edward Lauder, B. Krishnakumar

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.568423

KEYWORDS: Critical dimension metrology, Photomasks, Chromium, Etching, Diffractive optical elements, Semiconducting wafers, Reticles, Phase modulation, Optical proximity correction, Manufacturing

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Proceedings Article | 6 December 2004 Paper

Sophisticated yield analysis through novel data clustering and visualization

Michael Jacobson, Jian Ma, Richard Rodrigues, Robert O'Donnell

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569346

KEYWORDS: Photomasks, Visualization, Manufacturing, Data processing, Statistical analysis, Image registration, Silicon, Zoom lenses, Databases, Visual analytics

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Proceedings Article | 10 August 1994 Paper

Photoemission spectroscopy of composition and doping of high-temperature superconductors

Philippe Almeras, Helmuth Berger, Giorgio Margaritondo, Jian Ma, Marshall Onellion

Proceedings Volume 2158, (1994) https://doi.org/10.1117/12.182695

KEYWORDS: Doping, Copper, Strontium, Iodine, Superconductors, Calcium, Photoemission spectroscopy, Crystals, Technetium, Semiconductors

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Showing 5 of 7 publications

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