A 4-bit digital MEMS phase shifter, based on RF MEMS series switches and switched-line design, is presented. The phase shifter is fabricated on a 360 μm-thick silicon substrate, and the chip size is smaller than 5×8 mm 2. The simulation performance of 16 phase states shows that at X-band the worst insertion phase deviation is 8 degree from the desired value, the insertion loss is less than -2.0dB and the VSWR is less than 1.8.
The hydrogenated nanocrystalline silicon films have been prepared with plasma enhanced chemical vapor deposition method. The microstructure of these films has been studied by high resolution transmission electron microscopy, Raman scattering spectra and x-ray diffraction analysis methods. The films are especially valuable for some devices, for example, quantum dots, luminescence devices, and film pressure sensors etc. The nc-Si:H films show texture structure. The fractal dimension of this microstructure has been calculated with a Fourier filtered image. The microstructure properties of the films are discussed.
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