This work reports on the optical feedback dynamics of InAs/GaAs QD lasers epitaxially grown on silicon operating in both the short and long delay regimes. Both undoped and p-doped QD lasers are considered. Whatever the external cavity length, no chaotic oscillations are observed on both samples as a result of the small α-factor observed in the silicon QD lasers. Despite that, experiments conducted in the short-cavity region raise period-one oscillation for the undoped QD laser. In addition, the transition from the short to long delay regimes can be finely covered by varying the external cavity length from 5 cm to 50 cm, and the boundaries associated to the appearance of the periodic oscillation are identified. In the short-cavity region, boundaries show some residual undulations resulting from interferences between internal and external cavity modes; whereas in the long-delay regime, the feedback ratio delimiting the boundaries keeps decreasing, until it progressively becomes rather in- dependent of the external cavity length. Overall, our results showed that the p-doped device clearly exhibits a much higher tolerance to the different external feedback conditions than the undoped one, seeing that its periodic oscillation boundaries are barely impossible to retrieve at the maximum feedback strength of -7 dB. These results show for the first time the p-modulation doping effect on the enhancement of feedback insensitivity in both short- and long-delay configurations, which is of paramount importance for the development of ultra-stable silicon transmitters for photonic technologies.
Direct epitaxial growth of III-V lasers on silicon provides the most economically favorable means of photonic integration but has traditionally been hindered by poor material quality. Relative to commercialized heterogeneous integration schemes, epitaxial growth reduces complexity and increases scalability by moving to 300 mm wafer diameters. The challenges associated with the crystalline mismatch between III-Vs and Si can be overcome through optimized buffer layers including thermal cyclic annealing and metamorphic layers, which we have utilized to achieve dislocation densities < 7×106 cm-2. By combining low defect densities with defect-tolerant quantum dot active regions, native substrate performance levels can be achieved. Narrow ridge devices with threshold current densities as low as ~130 A/cm2 have been demonstrated with virtually degradation free operation at 35°C over 11,000 h of continuous aging at twice the initial threshold current density (extrapolated time-to-failure >10,000,000 h). At 60°C, lasers with extrapolated time-to-failure >50,000 h have been demonstrated for >4,000 h of continuous aging. Lasers have also been investigated for their performance under optical feedback and showed no evidence of coherence collapse at back-reflection levels of 100% (minus 10% tap for measurement) due to the ultralow linewidth enhancement factor (αH < 0.2) and high damping of the optimized quantum dot active region.
The integration of optical functions on a microelectronic chip brings many innovative perspectives, along with the possibility to enhance the performances of photonic integrated circuits (PIC). Owing to the delta-like density of states, quantum dot lasers (QD) directly grown on silicon are very promising for achieving low-cost transmitters with high thermal stability and large insensitivity to optical reflections. This paper investigates the dynamical and nonlinear properties of silicon based QD lasers through the prism of the linewidth broadening factor (i.e. the so-called α-factor) and the optical feedback dynamics. Results demonstrate that InAs/GaAs p-doped QD lasers epitaxially grown on silicon exhibit very low α-factors, which directly transform into an ultra-large resistance against optical feedback. As opposed to what is observed in heterogeneously integrated quantum well (QW) lasers, no chaotic state occurs owing to the high level of QD size uniformity resulting in a near zero α-factor. Considering these results, this study suggests that QD lasers made with direct epitaxial growth is a powerful solution for integration into silicon CMOS technology, which requires both high thermal stability and feedback resistant lasers.
A common way of extracting the chirp parameter (i.e., the α-factor) of semiconductor lasers is usually performed by extracting the net modal gain and the wavelength from the amplified spontaneous emission (ASE) spectrum. Although this method is straightforward, it remains sensitive to the thermal effects hence leading to a clear underestimation of the α-factor. In this work, we investigate the chirp parameter of InAs/GaAs quantum dot (QD) lasers epitaxially grown on silicon with a measurement technique evaluating the gain and wavelength changes of the suppressed side modes by optical injection locking. Given that the method is thermally insensitive, the presented results confirm our initial measurements conducted with the ASE i.e. the α-factor of the QD lasers directly grown on silicon is as low as 0.15 hence resulting from the low threading dislocation density and high material gain of the active region. These conclusions make such lasers very promising for future integrated photonics where narrow linewidth, feedback resistant and low-chirp on-chip transmitters are required.
Quantum cascade lasers (QCLs) are optical sources exploiting radiative intersubband transitions within the conduction band of semiconductor heterostructures.1 The opportunity given by the broad span of wavelengths that QCLs can achieve, from mid-infrared to terahertz, leads to a wide number of applications such as absorption spectroscopy, optical countermeasures and free-space communications requiring stable single-mode operation with a narrow linewidth and high output power.2 One of the parameters of paramount importance for studying the high-speed and nonlinear dynamical properties of QCLs is the linewidth enhancement factor (LEF). The LEF quantifies the coupling between the gain and the refractive index of the QCL or, in a similar manner, the coupling between the phase and the amplitude of the electrical field.3 Prior work focused on experimental studies of the LEF for pump currents above threshold but without exceeding 12% of the threshold current at 283K4 and 56% of the threshold current at 82K.5 In this work, we use the Hakki-Paoli method6 to retrieve the LEF for current biases below threshold. We complement our findings using the self-mixing interferometry technique5 to obtain LEFs for current biases up to more than 100% of the threshold current. These insets are meaningful to understand the behavior of QCLs, which exhibit a strongly temperature sensitive chaotic bubble when subject to external optical feedback.7
In this work, we theoretically investigate the relative intensity noise (RIN) properties of quantum dot (QD) lasers through a rate equation model including the Langevin noises and the contribution from the off resonance energy levels. It is shown that the carrier noise significantly enhances the RIN which can be further reduced by properly controlling the energy separation between the first excited and the ground states. In addition, simulations also unveil that the RIN of QD lasers is rather temperature independent which is of prime importance for the development of power efficient light sources. Overall, these results indicate that QD lasers are excellent candidates for the realization of ultra-low noise oscillators hence being advantageous for fiber optics communication networks, short reach optical interconnects and integrated photonics systems.
In this paper, we investigate the temperature dependence of spectral linewidth of InAs/InP quantum dot distributed feedback lasers. In comparison with their quantum well counterparts, results show that quantum dot lasers have spectral linewidths rather insensitive to the temperature with minimum values below 200 kHz in the range of 283K to 303K. The experimental results are also well confirmed by numerical simulations. Overall, this work shows that quantum dot lasers are excellent candidates for various applications such as coherent communication systems, high-resolution spectroscopy, high purity photonic microwave generation and on-chip atomic clocks.
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