Voltage-induced reflective changes of Pt/BLT/Si and Pt/STO/Si are investigated in visible and near infrared band. A
theoretic calculation of inversion layer plasmons is set up. The most sensitive optical band and the voltage value interval
causing fastest change rate are indicated. Some variance regularities are described, and this study provides the basically
theoretical support for the application of an optical readout infrared imaging device: MFIS.
Both conventional reflectance and electric modulation reflectance of MIS structures: Pt/BLT/Si and Pt/STO/Si are
investigated under different bias voltage in visible band. To make the study for a novel type of infrared imaging device
with optical readout, we describe theoretically the regularity of bias voltage-induced reflectivity change of MIS using
Drude plasmon effect model and employ the electric modulation to enhance the sensitivity and resolution of reflectance
spectrum of MIS. To improve the SNR for reflectance measurement, we design a dual-optical-path and dual-modulating
experiment instrument. A tandem demodulation technique is adopted with two lock-in amplifiers to achieve precise
results. Some more sensitive optical band for optical readout and the voltage value interval causing fastest change rate
are found. With the MIS-based research, we bring out the possibility of forming the MFIS device for infrared imaging by
attaching a ferroelectric layer PZT to MIS structure. The detecting principle of MFIS device is briefly introduced.