Dr. Jin-Sang Kim Profile

Dr. Jin-Sang Kim

at KIST

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 9 September 2016 Presentation + Paper

Controlling the growth temperature gradient and interface shape for traveling heater method growth of CdTe single crystals

Youngjoon Suh, Jin-Sang Kim, Sang-Hee Suh

Proceedings Volume 9968, 996817 (2016) https://doi.org/10.1117/12.2237457

KEYWORDS: Crystals, Crystallography, Quartz, Crystals, Interfaces, Tellurium, Supercooling, Raw materials, Sensors, Temperature metrology, Solids

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Proceedings Article | 5 December 2002 Paper

Characteristics of HgCdTe layers grown by MOVPE on (211)B CdTe/Si substrates

Sang-Hee Suh, Jin-Sang Kim, Dae-Won Seo, Suk-Ryong Hahn, Sivalingam Sivananthan

Proceedings Volume 4795, (2002) https://doi.org/10.1117/12.453801

KEYWORDS: Mercury cadmium telluride, Etching, Semiconducting wafers, X-rays, Mid-IR, Silicon, Crystals, Annealing, Sensors, Mercury

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Proceedings Article | 5 December 2002 Paper

SWIR diodes of HgCdTe on GaAs substrates grown by metal organic vapor phase epitaxy

Jin-Sang Kim, Se-Young An, Sang-Hee Suh

Proceedings Volume 4795, (2002) https://doi.org/10.1117/12.451033

KEYWORDS: Mercury cadmium telluride, Gallium arsenide, Short wave infrared radiation, Potassium, Metals, Temperature metrology, Photodiodes, Chemical elements, Diodes, Infrared radiation

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Proceedings Article | 15 December 2000 Paper

Electrical properties of ZnS, CdTe/HgCdTe interfaces evaporated from effusion cell in UHV chamber

Jin-Sang Kim, Jong-Hyung Song, Sang-Hee Suh

Proceedings Volume 4130, (2000) https://doi.org/10.1117/12.409836

KEYWORDS: Interfaces, Zinc, Mercury cadmium telluride, Cadmium, Annealing, Oxides, Mercury, Metalorganic chemical vapor deposition, Ions, Tellurium

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Proceedings Article | 26 October 1998 Paper

Metal organic vapor phase epitaxy of P-on-n HgCdTe/GaAs heterojunction

Jong-Hyeong Song, Jin-Sang Kim, Kwan-Uk Jung, Sang-Hee Suh, Sun-Ung Kim, Mann-Jang Park

Proceedings Volume 3436, (1998) https://doi.org/10.1117/12.328041

KEYWORDS: Mercury cadmium telluride, Doping, Iodine, Arsenic, Heterojunctions, Metals, Diffusion, Vapor phase epitaxy, Mid-IR, Diodes

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