Dr. Jing Li
at Kansas State Univ
SPIE Involvement:
Author
Publications (8)

PROCEEDINGS ARTICLE | April 13, 2005
Proc. SPIE. 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX
KEYWORDS: Semiconductors, Ultrafast phenomena, Deep ultraviolet, Semiconductor materials, Gallium nitride, Aluminum nitride, Phonons, Carrier dynamics, Nanostructure materials, Temperature metrology

PROCEEDINGS ARTICLE | June 16, 2004
Proc. SPIE. 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII
KEYWORDS: Magnesium, Silicon, Doping, Gallium nitride, Aluminum, Aluminum nitride, Excitons, Picosecond phenomena, Electromagnetic coupling, Gallium

PROCEEDINGS ARTICLE | May 30, 2003
Proc. SPIE. 4992, Ultrafast Phenomena in Semiconductors VII
KEYWORDS: Semiconductors, Deep ultraviolet, Luminescence, Gallium nitride, Sapphire, Aluminum nitride, Excitons, Picosecond phenomena, Metalorganic chemical vapor deposition, Temperature metrology

PROCEEDINGS ARTICLE | June 11, 2002
Proc. SPIE. 4643, Ultrafast Phenomena in Semiconductors VI
KEYWORDS: Semiconductors, Quantum wells, Waveguides, Luminescence, Diffusion, Gallium nitride, Wave propagation, Excitons, Polaritons, Light wave propagation

PROCEEDINGS ARTICLE | June 11, 2002
Proc. SPIE. 4643, Ultrafast Phenomena in Semiconductors VI
KEYWORDS: Magnesium, Luminescence, Silicon, Doping, Gallium nitride, Aluminum, Excitons, Metalorganic chemical vapor deposition, Gallium, Temperature metrology

PROCEEDINGS ARTICLE | April 23, 2001
Proc. SPIE. 4280, Ultrafast Phenomena in Semiconductors V
KEYWORDS: Sensors, Ultraviolet radiation, Quantum efficiency, Atomic force microscopy, Gallium nitride, Optoelectronics, Aluminum, Indium gallium nitride, Heterojunctions, Ultraviolet detectors

Showing 5 of 8 publications
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