Ms. Jing Li Profile

Jing Li

at Xidian Univ

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Proceedings Article | 6 February 2019 Paper

Negative capacitance transistors with sub-kT/q swing

Jing Li, Jiuren Zhou, Genquan Han, Yan Liu, Yue Peng, Jincheng Zhang, Yue Hao

Proceedings Volume 10842, 1084204 (2019) https://doi.org/10.1117/12.2505014

KEYWORDS: Germanium, Field effect transistors

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The negative capacitance (NC) Ge pFETs with different thicknesses of HfZrO_x (HZO) are investigated. Although NC transistors with 6.6 nm HZO exhibit a 56 mV/decade subthreshold swing, the hysteresis inevitably occurs. The hysteresis-free characteristics are demonstrated in NC Ge pFETs with 4.5 and 3.7 nm HZO. We also study the impact of annealing temperature on the electrical performance of devices, which shows that the hysteresis reduces with the increasing of annealing temperature. By tuning the parameters of HZO, the NC devices achieve better SS and on-current in comparison with the control transistors.

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