The Micro-processing & Nano-technology Laboratory at the Institute of Microelectronics, Chinese Academy of Sciences (CAS), is equipped with a GCA 3600F PG&3696, a JBX 6AII & JBX 5000LS EB, and an ETEC MEBES 4700S EB. For a long time we have been engaged in the research and manufacture on Optical Resolution Enhancement Technology (RET) and E-Beam Direct Writing Technology. In this paper the following technologies will be described: PSM, OPC EBDW,EPC,Match & Mixed Lithography technology. Through the application of RET in optical lithography system, we completed the 0.2 um pattern with the g line and I line light source, which is the necessary preparation for 100nm node with 193nm light source. By means of match & mixed lithography and nanofabrication technology, 20nm-50nm gate CMOS transistor and 100nm gate HEMT are successfully developed.
The use of Alternating phase-shifting mask has been demonstrated to be a most powerful approach to expand resolution limitation and expand the process window of lithography. But the phase conflict problem limits the application of alt-PSM. For dark field alt-PSM, node connection PSM is a feasible method to solve the problem. We investigate the application of this method at 100nm node by simulation with ArF light source. The results prove that alt-PSM with conventional partial coherence illumination can be applied in the manufacturing of random interconnect layer. This method can expand the process window effectively. The program that can achieve the pattern decomposition automatically is also developed. We’re sure that combined with optical proximity effect correction, this multi-exposure technology can fulfill the need of 0.1-μm generation logic IC lithography.