In recent years, the Ministry of Education of China attaches great importance to the reform of higher education quality. As an important link in the reform of higher education, curriculum development is bound to promote the development of "quality-centered connotative education". Zhejiang University, Changchun University of Science and Technology, Southern Airlines University and other colleges and universities carried out a full range of close cooperation, proposed integrated innovation teaching mode of the course based on network technology. Based on this model, the course of "Applied Optics" has been practiced for two years. The results show that the integrated innovation teaching mode can fully realize the integration amplification effect among multiple colleges and universities and the depth sharing all types of resources. Based on the principle of co-building and sharing, mutual help, comprehensively improve the teaching quality of domestic related courses and promote the comprehensive development of the curriculum to meet the needs of learning society.
Optoelectronic functional materials are divided into two categories as electronic functional material and photonic functional material. And the comparison of the two materials exhibits that the theory of electronic functional material, solid-state quantum mechanics, has developed quite ripe, but the theory of photonic functional material is still in the classical stage or quasi-classical stage. While today, photonic functional material has gradually developed into microscopic field, the deficiency of quantum mechanics in its theory has confined the development of photonic functional material. The optical theory in this paper is different from the traditional optical theory that originates from wave optics, but originates from ray optics and introduces quantum mechanics into ray optics, thus sets up the formula of ray optics quantum mechanics. The conclusion exhibits great symmetry between ray optics quantum mechanics and solid-state quantum mechanics. Nonrelativistic ray optics quantum mechanics is set up on the condition that light is confined near the axis. This paper introduces the construction of ray optics quantum mechanics concisely, and its main equations as well.
A novel structure for high peak power output of semiconductor lasers has been designed with a weak optical absorption region near cavity facet and a low optical energy density distribution on both front and back cavity facets has been realized simultaneously. The device has been fabricated with a standard MBE grown AlGaAs/GaAs material wafer, and a stack assembly of five laser chips has been finally obtained. The measured stack has a maximum peak power output of 300W with a whole emitting aperture of 2×0.5mm2 and a satisfactory farfield (θ⊥) output property is also achieved with θ⊥ of 31o.
AlGaAs/GaAs material diode lasers grown by MOCVD using TBA as the group-V source and N2 as the carrier gas, was reported. Lasing has been successfully achieved with a low threshold current density of 506 A/cm2.
High power InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition (MOCVD) were fabricated with pulsed anodic oxidation. A maximum light power output of 304 mW was obtained from a 10-μm stripe width uncoated laser diode in continuous wave (CW) mode at room temperature. The characteristic temperature of the lasers was 138 K.
This paper presents the structure design and fabrication technology of 850nm wavelength high power wide spectrum Superluminescent Diodes (SLDs) as non-coherent light source, for the application of fiber gyroscope and other areas. Quantum Well epitaxial structure, unpumped absorbing region structure and facet coating methods have been adopted for enhancing the gain coefficient, output power and the reduction or elimination of lasing oscillation. As typical device performance results, SLDs have been demonstrated with central wavelength of 848-851nm, spectrum FWHM no less than 20nm, and no less than 7mW output under 120mA injection current. The devices operated up to 100°C.
This paper presents the structure design and fabrication technology of 850nm superluminescent Diodes (SLDs).Various ways have been tried for the suppression of F-P lasing oscillation to realize superluminescence: Tilted-stripe structure, tandem-type structure and non-injection section near the rear facet are introduced. Three structures are also compared and combined with each other. The device not lasing at maximum injection current 200mA is realized. At injection current of 150mA, the maximum output power can be 7.8mW and the device can still work at 100°C.
980nm InGaAs/GaAs separate confinement heterostructure (SCH) strained quantum well (QW) laser with non-absorbing facets is fabricated. The microchannel coolers is designed and fabricated with a five-layer thin oxygen-free copper plate structure. We report the operating characteristics of 980 nm high power semiconductor laser stacked arrays packaged by microchannel coolers. A highest CW output power of 200 W for 5-bar arrays is obtained.
This paper employing concepts of the quantum theory of photo-flow-line to analogize light coupling problem in I-D wave-guide as symmetrical potential well of refractive index. Getting the relationship among quantum of refractive index, potential well of refractive index and well width corresponding to photonic resonance phenomenon through calculation. Thus we study the problem of the efficiency of optical coupling.
In this paper, micro-column of porous silicon is analog as column "photonic potential well". By resolving light quantum mechanics equation, mode function of porous silicon luminecence is obtained, from which we can see it is the restricting effect of "photonic potential well" that makes the quantized oscillating mode output of porous silicon. The relationship between the mode and the dimension of "photonic potential well" is discussed, which can supply a law for designation and fabrication of porous sillicon.