In this paper, the lateral single-mode emission from 1064nm edge-emitting (broad area) BA diode lasers with laterally coupled passive waveguide (LCPW) structures is presented. The LCPW structure is introduced to both sides of the broad active waveguide, and the high-order lateral modes can be tunneled into the LCPW, which results in an increase in higher-order lateral modes loss and an increase in the 2D optical confinement factor difference between fundamental lateral mode and higher-order lateral modes, thereby suppressing the higher-order lateral modes. The influence of LCPW structure on the suppression of higher order lateral modes in broad area lasers are investigated. The results show that for the semiconductor laser with active waveguide width of 15μm, the introduction of LCPW structure effectively eliminates the high-order lateral modes and achieves a single lateral mode output.
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