We propose a Schottky photodetector with tapered thin metal strip on SOI platform. Schottky photodetector can detect photons below the semiconductor bandgap energy by exploiting the internal photoemission. In the internal photoemission process, the hot carriers generate in the tapered thin metal strip where light absorption occurs, and part of these carriers can be emitted over the Schottky barrier and collected as photocurrent. The small thickness of the tapered metal strip contributes to a high internal quantum efficiency of 11.25%. This metal-semiconductor structure acts as a photonics-plasmonics mode convertor. According to 3D-FDTD simulation, about 95.8% of the incident optical power can be absorbed in the absorption area within 4.5μm at wavelength of 1550 nm. The responsivity is estimated to be 0.135A/W at 1550 nm. This compact design with a low dark current has a minimum detectable power of -23.15 dβm. We argue that this design can promote the progress of all-Si photo-detection in near-infrared communication band.