Prof. Jingyu Lin Profile

Prof. Jingyu Lin

Prof. at Texas Tech University

SPIE Involvement:

Fellow status | Senior status | Conference Program Committee | Author | Instructor

Publications (31)

PROCEEDINGS ARTICLE | February 22, 2018

Erbium-doped GaN bulk crystals as a gain medium for eye-safe high energy lasers

Proc. SPIE. 10528, Optical Components and Materials XV

KEYWORDS: Polishing, Waveguides, Crystals, Gallium nitride, Ytterbium, Erbium, Semiconducting wafers, Absorption

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PROCEEDINGS ARTICLE | August 29, 2017

High-efficiency and high-sensitivity thermal neutron detectors based on hexagonal BN epilayers

Proc. SPIE. 10392, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIX

KEYWORDS: Semiconductors, Sensors, Particles, Electrons, Boron, Metalorganic chemical vapor deposition, Solid state electronics, Ultraviolet detectors, Absorption

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PROCEEDINGS ARTICLE | September 9, 2016

Thermal neutron detectors based on hexagonal boron nitride epilayers

Proc. SPIE. 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII

KEYWORDS: Semiconductors, Lithium, Sensors, Dry etching, Crystals, Sapphire, Boron, Metalorganic chemical vapor deposition, Solid state electronics, Absorption

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PROCEEDINGS ARTICLE | February 24, 2016

Optical excitation of Er centers in GaN epilayers grown by MOCVD

Proc. SPIE. 9744, Optical Components and Materials XIII

KEYWORDS: Semiconductors, Spectroscopy, Luminescence, Electrons, Chemical vapor deposition, Gallium nitride, Erbium, Signal detection, Active optics

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PROCEEDINGS ARTICLE | February 4, 2013

Optoelectronic properties of hexagonal boron nitride epilayers

Proc. SPIE. 8631, Quantum Sensing and Nanophotonic Devices X

KEYWORDS: Photodetectors, Deep ultraviolet, Crystals, Dielectrics, Optoelectronics, Sapphire, Aluminum nitride, Boron, Metalorganic chemical vapor deposition, Absorption

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PROCEEDINGS ARTICLE | October 24, 2012

Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers

Proc. SPIE. 8507, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV

KEYWORDS: Semiconductors, Sensors, Particles, Semiconductor materials, Sapphire, Boron, Metalorganic chemical vapor deposition, Signal detection, Solid state electronics, Absorption

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PROCEEDINGS ARTICLE | January 21, 2012

Semiconducting hexagonal boron nitride for deep ultraviolet photonics

Proc. SPIE. 8268, Quantum Sensing and Nanophotonic Devices IX

KEYWORDS: Semiconductors, Electronics, Magnesium, Deep ultraviolet, Graphene, Crystals, Quantum efficiency, Doping, Aluminum nitride, Boron

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PROCEEDINGS ARTICLE | January 21, 2012

Full-scale self-emissive blue and green microdisplays based on GaN micro-LED arrays

Proc. SPIE. 8268, Quantum Sensing and Nanophotonic Devices IX

KEYWORDS: Semiconductors, Light emitting diodes, Metals, Video, Indium, Silicon, Gallium nitride, Sapphire, Indium gallium nitride, Solid state electronics

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PROCEEDINGS ARTICLE | March 17, 2010

Achieving p-InxGa1-xN alloys with high In contents

Proc. SPIE. 7602, Gallium Nitride Materials and Devices V

KEYWORDS: Magnesium, Luminescence, Hydrogen, Nitrogen, Doping, Gallium nitride, Indium gallium nitride, Metalorganic chemical vapor deposition, Gallium, Temperature metrology

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PROCEEDINGS ARTICLE | February 26, 2010

1.54 μm emitter and optical amplifier based on Er doped InGaN/GaN

Proc. SPIE. 7598, Optical Components and Materials VII

KEYWORDS: Semiconductors, Photonic devices, Light emitting diodes, Optical amplifiers, Ions, Gallium nitride, Erbium, Photonic integrated circuits, Metalorganic chemical vapor deposition, Absorption

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PROCEEDINGS ARTICLE | January 23, 2010

III-nitride nanostructures for energy generation

Proc. SPIE. 7608, Quantum Sensing and Nanophotonic Devices VII

KEYWORDS: Nanostructures, Photovoltaics, Solar energy, Electrodes, Solar cells, Hydrogen, Quantum efficiency, Gallium nitride, Indium gallium nitride, Thermoelectric materials

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PROCEEDINGS ARTICLE | February 6, 2007

Achieving conductive high Al-content AlGaN alloys for deep UV photonics

Proc. SPIE. 6479, Quantum Sensing and Nanophotonic Devices IV

KEYWORDS: Magnesium, Deep ultraviolet, Silicon, Zinc, Doping, Gallium nitride, Aluminum, Aluminum nitride, Excitons, Gallium

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PROCEEDINGS ARTICLE | February 28, 2006

III-nitride deep ultraviolet micro- and nano-photonics

Proc. SPIE. 6127, Quantum Sensing and Nanophotonic Devices III

KEYWORDS: Light emitting diodes, Magnesium, Microlens array, Deep ultraviolet, Polarization, Ultraviolet light emitting diodes, Sapphire, Aluminum, Aluminum nitride, Gallium

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PROCEEDINGS ARTICLE | February 15, 2006

Time-resolved photoluminescence studies of Mg-doped AlN epilayers

Proc. SPIE. 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X

KEYWORDS: Magnesium, Luminescence, Gallium nitride, Aluminum, Aluminum nitride, Excitons, Picosecond phenomena, Metalorganic chemical vapor deposition, Electromagnetic coupling, Gallium

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PROCEEDINGS ARTICLE | April 13, 2005

Carrier dynamics in AlN and GaN epilayers at the elevated temperatures

Proc. SPIE. 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX

KEYWORDS: Semiconductors, Ultrafast phenomena, Deep ultraviolet, Semiconductor materials, Gallium nitride, Aluminum nitride, Phonons, Carrier dynamics, Nanostructure materials, Temperature metrology

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PROCEEDINGS ARTICLE | October 20, 2004

III-nitride blue and UV photonic-crystal light-emitting diodes

Proc. SPIE. 5530, Fourth International Conference on Solid State Lighting

KEYWORDS: Light emitting diodes, Ultraviolet radiation, Photonic crystals, Electroluminescence, Ultraviolet light emitting diodes, Near field scanning optical microscopy, Optical pumping, Gallium, Near field optics, Blue light emitting diodes

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PROCEEDINGS ARTICLE | October 20, 2004

Mg-doped Al-rich AlGaN alloys for deep UV emitters

Proc. SPIE. 5530, Fourth International Conference on Solid State Lighting

KEYWORDS: Light emitting diodes, Magnesium, Deep ultraviolet, Doping, Aluminum, Aluminum nitride, Metalorganic chemical vapor deposition, Gallium, Crystal optics, Temperature metrology

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PROCEEDINGS ARTICLE | June 16, 2004

Subpicosecond Raman studies of nonequilibrium electron transport in an In0.4Ga0.6N epilayer grown on GaN

Proc. SPIE. 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII

KEYWORDS: Semiconductors, Surface plasmons, Scattering, Luminescence, Raman spectroscopy, Gallium nitride, Monte Carlo methods, Raman scattering, Electron transport, Indium nitride

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PROCEEDINGS ARTICLE | June 16, 2004

Time-resolved photoluminescence studies of Si- and Mg-doped AlN epilayers

Proc. SPIE. 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII

KEYWORDS: Magnesium, Silicon, Doping, Gallium nitride, Aluminum, Aluminum nitride, Excitons, Picosecond phenomena, Electromagnetic coupling, Gallium

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Si and Mg-doped AlN epilayers were grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates. Deep ultraviolet (UV) picosecond time-resolved photoluminescence (PL) spectroscopy has been employed to study the optical transitions in the grown epilayers. The donor bound exciton (or I₂) transition was found to be the dominant recombination line in Si-doped AlN epilayers at 10 K and its emission intensity decreases with increasing Si dopant concentration. Doping induced band-gap renormalization effect has also been observed. Time-resolved PL results on Si-doped AlN revealed a linear decrease of PL decay lifetime with increasing Si dopant concentration, which was believed to be a direct consequence of the doping enhanced nonradiative recombination rates and corroborated the PL intensity results. For Mg-doped AlN epilayers, two emission lines at 4.70 and 5.54 eV have been observed at 10 K, which were assigned to donor-acceptor pair transitions involving Mg acceptor and two different donors (one deep and one shallow). From PL emission spectra and the temperature dependence of the PL emission intensity, a binding energy of 0.51 eV for Mg acceptor in AlN was determined. Together with previous experimental results, the Mg acceptor activation energy in AlGaN as a function of the Al content for the entire AlN composition range was obtained. The average hole effective mass in AlN was also deduced to be about 2.7 m₀ from the experimental value of Mg binding energy together with the effective mass theory. Although Mg acceptors are an effective mass state in ultra-large bandgap AlN, as a consequence of this large acceptor binding energy of 0.51 eV, only a very small fraction (about 10^-9) of Mg dopants can be activated at room temperature in Mg-doped AlN. Decay lifetimes of these emission lines are also measured as functions of emission energy, temperature, and excitation intensity. The implications of our finding on the applications of AlN epilayers for many novel devices will also be discussed.

PROCEEDINGS ARTICLE | July 1, 2003

III-nitrate ultraviolet photonic materials: epitaxial growth, optical and electrical properties, and applications

Proc. SPIE. 4999, Quantum Sensing: Evolution and Revolution from Past to Future

KEYWORDS: Magnesium, Deep ultraviolet, Ultraviolet radiation, Luminescence, Silicon, Doping, Gallium nitride, Aluminum, Excitons, Picosecond phenomena

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This paper summarizes some of the recent advances made by our group on the growth, characterization and applications of AlGaN alloys with high Al contents. Recently, our group has achieved highly conductive n-type Al_xGa_1-xN for x as high as 0.7 (a resistivity value as low as 0.15 ohm-cm has been achieved). Prior to this, only insulating Al_xGa_1-xN (x > 0.5) can be obtained. Our success is largely attributed to our unique capability for monitoring the optical qualities of these layers -- the development of the world's first (and presently only) deep UV picosecond time-resolved optical spectroscopy system for probing the optical properties of III-nitrides [photoluminescence (PL), electro-luminescence (EL), etc.] with a time-resolution of a few ps and wavelength down to deep UV (down to 195 nm). Our time- resolved PL results have shown that we must fill in the localization states (caused by alloy fluctuation) by doping before conduction could occur. The density of states of localization states is about 10¹⁸/cm³ in this system. It was also shown that Al_xGa_1-xN alloys could be made n-type for x up to 1 (pure AlN). Time-resolved photoluminescence (PL) studies carried out on these materials have revealed that Si-doping reduces the effect of carrier localization in Al_xGa_1-xN alloys and a sharp drop in carrier localization energy as well as a sharp increase in conductivity occurs when the Si doping concentration increases to above 1 x 10¹⁸ cm^-3. For the Mg-doped Al_xGa_1-xN alloys, p-type conduction was achieved for x up to 0.27. The Mg acceptor activation energy as a function of Al content has been deduced. Mg-δ-doping in GaN and AlGaN epilayers has been investigated. We have demonstrated that δ-doping significantly suppresses the dislocation density, enhances the p-type conduction, and reduces the non-radiative recombination centers in GaN and AlGaN. AlN epilayers with high optical qualities have also been grown on sapphire substrates. Very efficient band-edge PL emission lines have been observed for the first time with above bandgap deep UV laser excitation. We have shown that the thermal quenching of the PL emission intensity is much less severe in AlN than in GaN and the optical quality of AlN can be as good as GaN. From the low temperature (10 K) emission spectra, as well as the temperature dependence of the recombination lifetime and the PL emission intensity, the binding energies of the bound excitons and free excitons in AlN were deduced to be around 16 meV and 80 meV, respectively. From this, the energy bandgap of AlN epilayers grown on sapphire was found to be around 6.11 eV at 10 K. The observed large free exciton binding energy implies that excitons in AlN are extremely robust entities. This together with other well-known physical properties of AlN may considerably expand future prospects for the application of III-nitride materials.

PROCEEDINGS ARTICLE | May 30, 2003

Epitaxial growth and time-resolved photoluminescence studies of AIN epilayers

Proc. SPIE. 4992, Ultrafast Phenomena in Semiconductors VII

KEYWORDS: Semiconductors, Deep ultraviolet, Luminescence, Gallium nitride, Sapphire, Aluminum nitride, Excitons, Picosecond phenomena, Metalorganic chemical vapor deposition, Temperature metrology

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PROCEEDINGS ARTICLE | June 11, 2002

Exciton-polariton propagation in AlGaN/GaN quantum-well waveguides probe by time-resolved photoluminescence

Proc. SPIE. 4643, Ultrafast Phenomena in Semiconductors VI

KEYWORDS: Semiconductors, Quantum wells, Waveguides, Luminescence, Diffusion, Gallium nitride, Wave propagation, Excitons, Polaritons, Light wave propagation

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PROCEEDINGS ARTICLE | June 11, 2002

Time-resolved photoluminescence studies of Al-rich AlGaN alloys

Proc. SPIE. 4643, Ultrafast Phenomena in Semiconductors VI

KEYWORDS: Magnesium, Luminescence, Silicon, Doping, Gallium nitride, Aluminum, Excitons, Metalorganic chemical vapor deposition, Gallium, Temperature metrology

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Si-doped n-type Al_xGa_1MINxN alloys with x up to 0.5 and Mg-doped p-type Al_xGa_1-xN alloys with x up to 0.27 were grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates. For the n-type Al_xGa_1-xN, we achieved highly conductive alloys for x up to 0.5. An electron concentration as high as 1x10¹⁸cm^-3 was obtained in Si-doped Al_0.5Ga_0.5N alloys with an electron mobility of 16 cm$_2)Vs at room temperature, as confirmed by Hall-effect measurements. Our results also revealed that the conductivity of Al_xGa_1-xN alloys continuously increases with an increase of Si doping level for a fixed value of Al content (X<0.5), the conductivities of Al_xGa_1-xN alloys decrease with increasing Al content for a given doping level; the critical Si-doping concentration needed to convert insulating Al_xGa$1-x)N with high Al contents (X>=0.4) to n- type conductivity is about 1 x 10¹⁸cm^-3. Time- resolved photoluminescence studies carried out on these materials have shown that Si-doping reduces the effect of carrier localization in Al_xGa_1-xN alloys and a sharp drop in carrier localization energy occurs when the Si doping concentration increases above 1x10¹⁸cm^-3, which directly correlates with the observed electrical properties. For the Mg-doped Al_xGa_1-xN alloys, p-type conduction was achieved for x up to 0.27, as confirmed by variable temperature Hall measurements. Emission lines of band-to-impurity transitions of free electrons with neutral Mg acceptors as well as localized excitons have been observed in the p-type Al_xGa_1-xN alloys. The Mg acceptor activation energies E_A were deduces from photoluminescence spectra and were found to increase with Al content and agreed very well with those obtained by Hall measurements. From the measured activation energy as a function of Al content, E_A versus x, the resistivity of Mg-doped Al_xGa_1-x with high Al contents can be deduced. Our results have also shown that PL measurements provide direct means of obtaining E_A especially where this cannot be obtained accurately by electrical methods due to high resistance of p-type Al_xGa_1-xN with high Al content.

PROCEEDINGS ARTICLE | April 23, 2001

Growth and optoelectronic properties of III-nitride quaternary alloys

Proc. SPIE. 4280, Ultrafast Phenomena in Semiconductors V

KEYWORDS: Sensors, Ultraviolet radiation, Quantum efficiency, Atomic force microscopy, Gallium nitride, Optoelectronics, Aluminum, Indium gallium nitride, Heterojunctions, Ultraviolet detectors

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PROCEEDINGS ARTICLE | April 23, 2001

Optimizing GaN/AlGaN multiple quantum well structures by time-resolved photoluminescence

Proc. SPIE. 4280, Ultrafast Phenomena in Semiconductors V

KEYWORDS: Quantum wells, Light emitting diodes, Ultraviolet radiation, Luminescence, Interfaces, Quantum efficiency, Gallium nitride, Picosecond phenomena, Metalorganic chemical vapor deposition, Piezoelectric effects

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PROCEEDINGS ARTICLE | March 28, 2000

Exciton localization dynamics in AlxGa1-xN alloys

Proc. SPIE. 3940, Ultrafast Phenomena in Semiconductors IV

KEYWORDS: Semiconductors, Optical properties, Spectroscopy, Gallium nitride, Optoelectronic devices, Aluminum, Excitons, Picosecond phenomena, Time resolved spectroscopy, UV optics

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PROCEEDINGS ARTICLE | November 9, 1999

Optical properties of InGaN multiple quantum well microdisks

Proc. SPIE. 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures

KEYWORDS: Optical filters, Quantum wells, Optical properties, Luminescence, Near field scanning optical microscopy, Ion beams, Excitons, Indium gallium nitride, Optical microcavities, Near field optics

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PROCEEDINGS ARTICLE | August 6, 1999

Optical properties of III-nitride microcavities

Proc. SPIE. 3625, Physics and Simulation of Optoelectronic Devices VII

KEYWORDS: Optical properties, Etching, Dry etching, Silicon, Quantum efficiency, Scanning electron microscopy, Gallium nitride, Sapphire, Optical microcavities, Microrings

PROCEEDINGS ARTICLE | May 24, 1999

Piezoelectric effects on the dynamics of optical transitions in GaN/AlxGa1-xN multiple quantum wells

Proc. SPIE. 3624, Ultrafast Phenomena in Semiconductors III

KEYWORDS: Quantum wells, Light emitting diodes, Luminescence, Physics, Gallium nitride, Excitons, Picosecond phenomena, Piezoelectric effects, Temperature metrology

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PROCEEDINGS ARTICLE | August 19, 1998

Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities

Proc. SPIE. 3547, Semiconductor Lasers III

KEYWORDS: Quantum wells, Optical properties, Spectroscopy, Luminescence, Physics, Excitons, Picosecond phenomena, Time resolved spectroscopy, Bessel functions

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PROCEEDINGS ARTICLE | April 23, 1998

Dynamics of fundamental optical transitions in group III nitrides

Proc. SPIE. 3277, Ultrafast Phenomena in Semiconductors II

KEYWORDS: Quantum wells, Magnesium, Luminescence, Semiconductor lasers, Gallium nitride, Excitons, Picosecond phenomena, Indium gallium nitride, Metalorganic chemical vapor deposition, Temperature metrology

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Showing 5 of 31 publications

Conference Committee Involvement (5)

Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI

22 January 2007 | San Jose, California, United States

Ultrafast Phenomena in Semiconductors and Nanostructure Materials X

23 January 2006 | San Jose, California, United States

Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX

24 January 2005 | San Jose, California, United States

Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII

26 January 2004 | San Jose, CA, United States

Ultrafast Phenomena in Semiconductors VII

29 January 2003 | San Jose, CA, United States

Course Instructor

SC741: III-Nitride Deep UV Photonics

This course provides attendees with an overview on recent advances in the deep ultraviolet (UV) photonic materials and devices based upon III-nitride wide bandgap semiconductors. The course covers fundamental material issues, micro- and nano-scale photonic device integration, deep UV emitter and detector fabrication, and device applications. The remaining foremost challenging issues and future development of nitride technologies will be discussed.

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