Dr. Sheu earned his Ph.D. in Electrical Engineering at the National Cheng-Kung University(NCKU), Taiwan. Dr. Sheu's specialty experiences started from 1995 to 1997 to join the Industrial Technology Research Institute(ITRI), which is a nonprofit R&D organization engaging in applied research and technical services in Taiwan, to develop GaN-based light-emitting diodes at Electronics and Optoelectronics Research Laboratories. In the mid of 1997, Dr. Sheu moved to Epistar Corporation Ltd., specializing in the manufacturing of high brightness LED chips and the growth of epitaxial wafers by metal-organic vapor-phase epitaxy. From the mid of 2000 to 2003, Dr. Sheu was with the Optical Science Center, National Central University, Taiwan, as a postdoctoral researcher. Since 2004, he joined the Department of Photonics, NCKU to be a faculty member. He is currently a distinguished professor at the Department of Photonics, NCKU. His research interests include epitaxial growth and characterization of III-nitride semiconductors, optoelectronic devices. Dr. Sheu has authored and co-authored more than 250 SCI journal papers which have been cited more than 4580 times (h index=38). In addition, he has awarded 44 Taiwan patents and 21 USA patents. In addition to the study of LEDs, his research topics are recently focused on the development of GaN-based photovoltaic devices including the intermediate band and concentrator cells, hydrogen generation via photoelectrolysis of water and CO2 reduction.
Improved light extraction of nitride-based flip-chip light-emitting diodes by forming air voids on Ar-implanted sapphire substrate
Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors
Study of efficiency-droop mechanism in vertical red light-emitting diodes using electrical-to-optical impulse responses
Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers
Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts