Thin-film transistors (TFTs) of a metal oxide semiconductor typically are transparent and have high mobility to be paid
attention for back plane of displays. One of the most actively studied fabrication methods of metal oxide semiconductors
is the solution processing (sol-gel) method, owing to its low-cost, simple and fast steps that ensure good product uniformity, and applicability to roll-to-roll processing. Our study focused on probing the electronic properties of
solution-processed metal oxide TFTs. We have calculated the density of state (DOS) with monochromatic photonic
capacitance-voltage (MPCV) measurements. Improvements in device are proved by electronic and photo-electronic methods.