Deep level transient spectroscopy (DLTS) and capacitance-voltage measurements (C-V) have been performed on
AlGaAs/GaAs diode structures containing quantum wells (QWs) with graded or stepped barriers content and compared
with structures without QWs. DLTS peaks have been observed only for the structures containing the QWs under reduced
voltage pulse excitation. A mechanism of carrier capture into and escape from the quantum wells has been discussed.
Integrated optics structures require a broad variability of the geometric and optic parameters of waveguides. This work presents an option for low-loss glass optical waveguide preparation, with a wide range of geometrical and optical properties, using relatively inexpensive substrates. Ion exchange method was used for the creation of those waveguides. Extension of waveguide characteristics was achieved using 1) different types of substitution ions (particularly K+, Ag+ and Li+), b) electric field-assisted ion exchange, c) different types of glass substrates. The results are readily applicable to the development of new optoelectronic structures because the technology also supports the design of very complex topologies.
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