CONFERENCE PROCEEDINGS
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Dr. Joachim Siebert
at Synopsys GmbH
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Author
Publications (5)
SPIE Journal Paper | December 2, 2013
Impact of realistic source shape and flexibility on source mask optimization
JM3 Vol. 13 Issue 01
KEYWORDS: Source mask optimization, Scanners, Fiber optic illuminators, Critical dimension metrology, Photomasks, Optical proximity correction, Semiconducting wafers, SRAF, 3D modeling, Printing
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PROCEEDINGS ARTICLE | April 12, 2013
The impact of realistic source shape and flexibility on source mask optimization
Proc. SPIE. 8683, Optical Microlithography XXVI
KEYWORDS: Scanners, Electroluminescence, Printing, Photomasks, Source mask optimization, Optical proximity correction, SRAF, Critical dimension metrology, Semiconducting wafers, Fiber optic illuminators
PROCEEDINGS ARTICLE | April 1, 2013
7nm node EUV predictive study of mask LER transference to wafer
Proc. SPIE. 8679, Extreme Ultraviolet (EUV) Lithography IV
KEYWORDS: Lithography, Calibration, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Nanoimprint lithography, Critical dimension metrology, Line edge roughness, Semiconducting wafers, Stochastic processes
PROCEEDINGS ARTICLE | March 23, 2012
Calibration and verification of a stochastic model for EUV resist
Proc. SPIE. 8322, Extreme Ultraviolet (EUV) Lithography III
KEYWORDS: Cadmium, Data modeling, Calibration, Photons, Scanning electron microscopy, Photomasks, Extreme ultraviolet, Line width roughness, Semiconducting wafers, Stochastic processes
PROCEEDINGS ARTICLE | March 16, 2009
Analysis of topography effects on lithographic performance in double patterning applications
Proc. SPIE. 7274, Optical Microlithography XXII
KEYWORDS: Lithography, Etching, Reflectivity, Computer simulations, Photomasks, Double patterning technology, Line edge roughness, Photoresist processing, Semiconducting wafers, Tin
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