Dr. Joachim Siebert Profile

Dr. Joachim Siebert

at Synopsys GmbH

SPIE Involvement:

Author

Publications (5)

SPIE Journal Paper | 2 December 2013

Impact of realistic source shape and flexibility on source mask optimization

Hirohiko Izumi, Keiichi Tajima, Joachim Siebert, Wolfgang Demmerle, Tomoyuki Matsuyama, Hajime Aoyama, Yasushi Mizuno, Noriyuki Hirayanagi, Naonori Kita, Ryota Matsui

JM3 Vol. 13 Issue 01

KEYWORDS: Source mask optimization, Scanners, Fiber optic illuminators, Critical dimension metrology, Photomasks, Optical proximity correction, Semiconducting wafers, SRAF, 3D modeling, Printing

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Proceedings Article | 12 April 2013

The impact of realistic source shape and flexibility on source mask optimization

Hajime Aoyama, Yasushi Mizuno, Noriyuki Hirayanagi, Naonori Kita, Ryota Matsui, Hirohiko Izumi, Keiichi Tajima, Joachim Siebert, Wolfgang Demmerle, Tomoyuki Matsuyama

Proc. SPIE. 8683, Optical Microlithography XXVI

KEYWORDS: Scanners, Electroluminescence, Printing, Photomasks, Source mask optimization, Optical proximity correction, SRAF, Critical dimension metrology, Semiconducting wafers, Fiber optic illuminators

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Proceedings Article | 1 April 2013

7nm node EUV predictive study of mask LER transference to wafer

D. Civay, E. Nash, U. Klostermann, T. Wallow, P. Mangat, H. Koh, P. Brooker, J. Siebert, H. Levinson

Proc. SPIE. 8679, Extreme Ultraviolet (EUV) Lithography IV

KEYWORDS: Lithography, Calibration, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Nanoimprint lithography, Critical dimension metrology, Line edge roughness, Semiconducting wafers, Stochastic processes

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Proceedings Article | 23 March 2012

Calibration and verification of a stochastic model for EUV resist

Weimin Gao, Alexander Philippou, Ulrich Klostermann, Joachim Siebert, Vicky Philipsen, Eric Hendrickx, Tom Vandeweyer, Gian Lorusso

Proc. SPIE. 8322, Extreme Ultraviolet (EUV) Lithography III

KEYWORDS: Cadmium, Data modeling, Calibration, Photons, Scanning electron microscopy, Photomasks, Extreme ultraviolet, Line width roughness, Semiconducting wafers, Stochastic processes

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Proceedings Article | 16 March 2009

Analysis of topography effects on lithographic performance in double patterning applications

J. Siebert, P. Brooker, T. Schmoeller, T. Klimpel

Proc. SPIE. 7274, Optical Microlithography XXII

KEYWORDS: Lithography, Etching, Reflectivity, Computer simulations, Photomasks, Double patterning technology, Line edge roughness, Photoresist processing, Semiconducting wafers, Tin

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