The quaternary alloy In<sub>x</sub>Ga<sub>1-x</sub>As<sub>y</sub>Sb<sub>1-y</sub> highly doped with tellurium was grown on substrates of p-type GaSb in the
direction (100) by liquid phase epitaxy (LPE). The longitudinal (LO) and transverse (TO) optical modes were obtained
using the modified random-element iso-displacement model (MREI model). The comparison of the experimental results
with obtained by the MREI model allows to confirm that the bands correspond to the modes associated LO and TO of
the binary compounds GaAs and (GaSb + InAs).
Thin films of tungsten oxide (WO<sub>3</sub>) have been grown by hot-filament metal oxide deposition (HFMOD) technique under
atmospheric pressure and an oxygen atmosphere on glass substrates. The thin film of WO<sub>3</sub> has been extensively studied
as an electrochromic material and has numerous applications in electrochromic devices. In order to explore the
possibility of using WO<sub>3</sub> in electrochromic devices, a preliminary and thorough study of the structural and optical
properties of the host material is an important step. By the X-ray diffraction analysis the single phase natures,
monoclinic and orthorhombic structure of the films have been confirmed. The IR spectra were constituted of many broad
peaks in the 1400-3500 cm<sup>-1</sup> region That are assigned to ν(OH) and δ(OH) modes of adsorbed water. The corresponding
WO<sub>3</sub> vibrations are in infrared regions of 1453-400 cm<sup>-1</sup> and 3454 cm<sup>-1</sup>, which correspond to W-O stretching, bending and lattice modes. By Transmittance measures determines that the optical bandgap is around 2.92 eV. We have observed
that the good quality WO<sup>3</sup> thin films can be satisfactorily grown by this technique.