Prof. John P. R. David Profile

Prof. John P. R. David

Professor of Electronic and Electrical Engineering at Univ of Sheffield

SPIE Involvement:

Author

Publications (42)

Proceedings Article | 8 March 2024 Presentation + Paper

Very high gain and low noise GaAsSb/AlGaAsSb avalanche photodiodes for 1550nm detection at room temperature

Yifan Liu, Xiao Jin, Seunghyun Lee, Hyemin Jung, Harry I. Lewis, Bingtian Guo, Sri Kodati, Mariah Schwartz, Christopher Grein, T. Ronningen, Joe Campbell, Sanjay Krishna, John P. David

Proceedings Volume 12882, 128820O (2024) https://doi.org/10.1117/12.3011687

KEYWORDS: Avalanche photodetectors, Avalanche photodiodes, Ionization, Dark current

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Proceedings Article | 7 December 2022 Presentation + Paper

Avalanche multiplication and excess noise characteristics in antimony-based avalanche photodiodes

John P. David, Xiao Jin, Harry Lewis, Bingtian Guo, Seunghyun Lee, Hyemin Jung, Sri Harsha Kodati, Baolai Liang, Sanjay Krishna, Joe Campbell

Proceedings Volume 12274, 122740A (2022) https://doi.org/10.1117/12.2640257

KEYWORDS: Antimony, Aluminum, Ionization, Gallium antimonide, Gallium, Avalanche photodetectors, Silicon, Signal to noise ratio, Diodes, Avalanche photodiodes

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Proceedings Article | 30 May 2022 Presentation

GaAsBi light emitting diodes for 1050nm broadband light sources

Thomas Rockett, Nada Adham, Matthew Carr, John P. David, Robert Richards

Proceedings Volume PC12144, PC121440U (2022) https://doi.org/10.1117/12.2621835

KEYWORDS: Light sources, Optical coherence tomography, Light emitting diodes, Quantum wells, Bismuth, Quantum dots, Near infrared, Indium arsenide, Superluminescent diodes, Ophthalmology

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GaAsBi has attracted research for near-infrared (NIR) optoelectronics because bismuth incorporation causes a far greater band gap reduction per unit strain than indium incorporation. The bismuth atoms induce the formation of many localised states near the valence band maximum, which can take part in radiative transitions and result in a large broadening of the luminescence spectrum. The large linewidths observed in GaAsBi are typically seen as a disadvantage of the material and researchers have focussed on reducing the density of localised states. Superluminescent light emitting diodes with peak emission centred around 1050 nm are useful for ophthalmology applications such as OCT since these wavelengths are less strongly absorbed by ocular media. In this case, a large LED spectral linewidth leads to an improved axial resolution in OCT, enabling better imaging and subsequent analysis by doctors. Commercial LED based OCT light sources operating at 1050nm rely on emission from both ground and excited states in InGaAs quantum wells and have a linewidth around 70nm. State-of-the-art OCT light sources based on multiple layers of InAs self-assembled quantum dots have achieved linewidths of 160nm. Existing unoptimised GaAsBi single quantum well structures grown in our group by molecular beam epitaxy with a peak wavelength of 1050nm have a spectral linewidth of around 67 nm, which nearly matches the commercial LEDs used for OCT. This is despite our devices only containing emission from the ground state in the quantum wells. With careful control of the bismuth content and well thickness in future devices, the linewidth of GaAsBi based devices could match or exceed the state-of-the-art for NIR broadband light sources. In this work we study the applicability of GaAsBi quantum well LEDs as a competitor to InGaAs quantum well and InAs quantum dot LEDs for broadband NIR light sources. We show simulations of LED structures to find the optimum LED design parameters that will give the broadest linewidth centred on 1050nm while retaining an approximately Gaussian emission shape. The growth challenges associated with growing the structures are also discussed.

Proceedings Article | 17 May 2022 Paper

Excess noise measurements in Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes

Xiao Jin, Bingtian Guo, Harry Lewis, SeungHyun Lee, Baolai Liang, Sanjay Krishna, Joe Campbell, John David

Proceedings Volume 12139, 1213907 (2022) https://doi.org/10.1117/12.2624285

KEYWORDS: Avalanche photodetectors, Signal to noise ratio, Ionization, Antimony, Indium gallium arsenide, Avalanche photodiodes, Aluminum, Absorption, Doping, Silicon

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Proceedings Article | 4 March 2022 Presentation + Paper

Comparison of the temperature dependence of impact ionization coefficients in AlAsSb, InAlAs, and InP

Xiao Jin, Shiyu Xie, Baolai Liang, Xin Yi, Harry Lewis, Leh Lim, Yifan Liu, Beng Koon Ng, Diana Huffaker, Chee Hing Tan, Duu Sheng Ong, John P. David

Proceedings Volume 11997, 119970B (2022) https://doi.org/10.1117/12.2609929

KEYWORDS: Ionization, Temperature metrology, Avalanche photodetectors, Diodes, Silicon, Scattering, Indium gallium arsenide, Phonons, Telecommunications, Semiconductor materials

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Proceedings Article | 13 October 2020 Presentation + Paper

Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44

Xin Yi, Shiyu Xie, Baolai Liang, Leh W. Lim, Diana Huffaker, Chee H. Tan, John P. David

Proceedings Volume 11540, 115400M (2020) https://doi.org/10.1117/12.2573766

KEYWORDS: Avalanche photodiodes, Avalanche photodetectors, Ionization, Electrons, Indium gallium arsenide, Diodes, Photodetectors, Defense technologies, Telecommunications, Semiconductor materials

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Proceedings Article | 10 March 2020 Presentation

High-performance AlAs0.56Sb0.44 avalanche photodiodes (Conference Presentation)

Xin Yi, Shiyu Xie, Baolai Liang, Leh Lim, Mukul Debnath, Diana Huffaker, Chee Hing Tan, John P. David

Proceedings Volume 11276, 112760E (2020) https://doi.org/10.1117/12.2544956

KEYWORDS: Avalanche photodiodes, Ionization, Signal processing, Silicon, Indium gallium arsenide, Absorption, Telecommunications, Optical signal processing, Interference (communication), Avalanche photodetectors

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Proceedings Article | 1 May 2017 Presentation + Paper

Progress in low light-level InAs detectors- towards Geiger-mode detection

Chee Hing Tan, Jo Shien Ng, Xinxin Zhou, John David, Shiyong Zhang, Andrey Krysa

Proceedings Volume 10212, 102120G (2017) https://doi.org/10.1117/12.2262469

KEYWORDS: Ionization, Photons, Annealing, Temperature metrology, Wet etching, Avalanche photodetectors, Indium arsenide, Sensors, Avalanche photodiodes, Photon counting, Signal detection, Single photon, Photodiodes, Short wave infrared radiation

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Proceedings Article | 21 October 2016 Paper

High sensitivity InAs photodiodes for mid-infrared detection

Jo Shien Ng, Xinxin Zhou, Akeel Auckloo, Benjamin White, Shiyong Zhang, Andrey Krysa, John P. David, Chee Hing Tan

Proceedings Volume 9988, 99880K (2016) https://doi.org/10.1117/12.2243146

KEYWORDS: Indium arsenide, Avalanche photodetectors, Photodiodes, Mid-IR, Avalanche photodiodes, Satellites, Gases, Ionization, Electrons, Quantum efficiency

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Proceedings Article | 29 October 2015 Paper

A high sensitivity detector for underwater communication systems

J. S. Cheong, A. Auckloo, J. S. Ng, A. Krysa, J. P. David

Proceedings Volume 9647, 96470O (2015) https://doi.org/10.1117/12.2194996

KEYWORDS: Sensors, Avalanche photodetectors, Silicon, Telecommunications, Signal detection, Bandpass filters, Doping, Photodiodes, Light sources, Cladding

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Proceedings Article | 31 October 2014 Paper

Demonstration of an InAsBi photodiode operating in the MWIR

Ian Sandall, Faebian Bastiman, Ben White, Robert Richards, John David, Chee Hing Tan

Proceedings Volume 9254, 92540Q (2014) https://doi.org/10.1117/12.2069697

KEYWORDS: Indium arsenide, Bismuth, Photodiodes, Mid-IR, Diodes, Gallium arsenide, Temperature metrology, Indium, Antimony, Surface finishing

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Proceedings Article | 5 November 2013 Paper

Design of high sensitivity detector for underwater communication system

J. Cheong, J. S. Ong, J. Ng, A. Krysa, F. Bastiman, J. P. David

Proceedings Volume 8899, 88990G (2013) https://doi.org/10.1117/12.2031953

KEYWORDS: Absorption, Doping, Sensors, Quantum efficiency, Photodiodes, Telecommunications, Gallium arsenide, Diffusion, Solids, Modeling

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Proceedings Article | 16 October 2013 Paper

Uncooled MWIR InAs/GaSb type-II superlattice grown on a GaAs substrate

M. Hobbs, F. Bastiman, C. Tan, J. P. David, S. Krishna, E. Plis

Proceedings Volume 8899, 889906 (2013) https://doi.org/10.1117/12.2031949

KEYWORDS: Gallium antimonide, Gallium arsenide, Mid-IR, Superlattices, Temperature metrology, Long wavelength infrared, Diffusion, Electrons, Infrared radiation, Absorption

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Proceedings Article | 24 October 2012 Paper

Short-wave infrared GaInAsSb photodiodes grown on GaAs substrates

Andrew R. Marshall, Kalyan Nunna, Siew Li Tan, Charles Reyner, Baolai Liang, Anitha Jallipalli, John P. David, D. Huffaker

Proceedings Volume 8541, 85410F (2012) https://doi.org/10.1117/12.974765

KEYWORDS: Gallium indium arsenide antimonide phosphide, Photodiodes, Gallium antimonide, Gallium arsenide, Sensors, Short wave infrared radiation, Infrared radiation, Diodes, Infrared photography, Etching

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Proceedings Article | 21 February 2012 Paper

Dilute nitride GaInNAs and GaInNAsSb for solar cell applications

Siew Li Tan, Wai Mun Soong, Matthew Steer, Shiyong Zhang, Jo Shien Ng, John David

Proceedings Volume 8256, 82561E (2012) https://doi.org/10.1117/12.910349

KEYWORDS: Doping, Gallium arsenide, Solar cells, Diodes, External quantum efficiency, Lamps, Diffusion, Annealing, Light sources, Photons

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Proceedings Article | 13 October 2010 Paper

Dry etching and surface passivation techniques for type-II InAs/GaSb superlattice infrared detectors

Siew Li Tan, Yu Ling Goh, Sankha dip Das, Shiyong Zhang, Chee Hing Tan, John P. David, Nutan Gautam, Hasul Kim, Elena Plis, Sanjay Krishna

Proceedings Volume 7838, 783814 (2010) https://doi.org/10.1117/12.864787

KEYWORDS: Etching, Dry etching, Gallium antimonide, Plasma, Indium arsenide, Superlattices, Reactive ion etching, Photoresist materials, Silica, Infrared detectors

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Proceedings Article | 14 May 2010 Paper

Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing

Siew Li Tan, Lionel J. Tan, Yu Ling Goh, Shiyong Zhang, Jo Shien Ng, John P. David, Igor Marko, Jeremy Allam, Stephen Sweeney, Alfred Adams

Proceedings Volume 7726, 77261M (2010) https://doi.org/10.1117/12.853912

KEYWORDS: Semiconducting wafers, Annealing, Doping, Oxygen, Calcium, Gallium arsenide, Nitrogen, Photodetectors, Molecular beam epitaxy, Luminescence

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Proceedings Article | 4 May 2010 Paper

Quantum dot infrared photodetectors with highly tunable spectral response for an algorithm-based spectrometer

P. Vines, C. Tan, J. P. David, R. Attaluri, T. Vandervelde, S. Krishna, W.-Y. Jang, M. Hayat

Proceedings Volume 7660, 76602D (2010) https://doi.org/10.1117/12.852650

KEYWORDS: Spectroscopy, Reconstruction algorithms, Optical filters, Long wavelength infrared, Gallium arsenide, Sensors, Bandpass filters, Infrared radiation, Quantum dots, Quantum well infrared photodetectors

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Proceedings Article | 28 April 2010 Paper

Simulations of avalanche breakdown statistics: probability and timing

Jo Shien Ng, Chee Hing Tan, John David

Proceedings Volume 7681, 76810K (2010) https://doi.org/10.1117/12.850145

KEYWORDS: Ionization, Lead, Photon counting, Electrons, Avalanche photodiodes, Picosecond phenomena, Single photon, Quantum efficiency, Silicon, Performance modeling

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Proceedings Article | 18 May 2009 Paper

The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengths

Chee Hing Tan, Andrew Marshall, Matthew Steer, John P. David

Proceedings Volume 7355, 73550Z (2009) https://doi.org/10.1117/12.821102

KEYWORDS: Indium arsenide, Avalanche photodetectors, Ionization, Diodes, Photon counting, Temperature metrology, Quantum efficiency, Amplifiers, Avalanche photodiodes, Short wave infrared radiation

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Proceedings Article | 7 May 2009 Paper

The development of extremely low-noise InAs electron APDs for SWIR active or passive imaging

Andrew R. Marshall, Chee Hing Tan, John P. David

Proceedings Volume 7298, 72983A (2009) https://doi.org/10.1117/12.818636

KEYWORDS: Avalanche photodetectors, Indium arsenide, Diodes, Ionization, Mercury cadmium telluride, Short wave infrared radiation, Staring arrays, Temperature metrology, Diffusion, Defense and security

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Proceedings Article | 7 May 2009 Paper

InAlAs avalanche photodiode with type-II absorber for detection beyond 2 μm

Y. Goh, D. S. Ong, S. Zhang, J. S. Ng, C. H. Tan, J. P. David

Proceedings Volume 7298, 729837 (2009) https://doi.org/10.1117/12.819818

KEYWORDS: Avalanche photodetectors, Heterojunctions, Temperature metrology, Absorption, Electrons, Interfaces, Superlattices, Luminescence, PIN photodiodes, Avalanche photodiodes

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Proceedings Article | 30 April 2009 Paper

Avalanche photodiodes beyond 1.65 um

J. S. Ng, C. H. Tan, J. P. David

Proceedings Volume 7320, 73200V (2009) https://doi.org/10.1117/12.821060

KEYWORDS: Indium arsenide, Diodes, Avalanche photodetectors, Indium gallium arsenide, Superlattices, Ionization, Electrons, Absorption, Avalanche photodiodes, Signal detection

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Proceedings Article | 2 October 2008 Paper

Multiple stack quantum dot infrared photodetectors

P. Vines, C. H. Tan, J. David, R. Attaluri, T. Vandervelde, S. Krishna

Proceedings Volume 7113, 71130J (2008) https://doi.org/10.1117/12.802247

KEYWORDS: Infrared radiation, Infrared detectors, Quantum well infrared photodetectors, Photodetectors, Sensors, Gallium arsenide, Quantum dots, Infrared photography, Mercury cadmium telluride, FT-IR spectroscopy

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Proceedings Article | 2 October 2008 Paper

Infrared photodiodes based on Type-II strained layer superlattices

Sankha Das, Yu Ling Goh, Chee Hing Tan, John Paul David, Jean-Baptiste Rodriguez, Elena Plis, Yagya Sharma, Ha Sul Kim, Sanjay Krishna

Proceedings Volume 7113, 71130I (2008) https://doi.org/10.1117/12.802203

KEYWORDS: Gallium antimonide, Gallium arsenide, Superlattices, Laser sintering, Photodiodes, Mercury cadmium telluride, Mid-IR, Infrared radiation, Sensors, Quantum efficiency

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Proceedings Article | 2 October 2008 Paper

Low noise InAs avalanche photodiodes for high sensitivity FPAs

Andrew Marshall, Chee Hing Tan, Matthew Steer, John David

Proceedings Volume 7113, 71130H (2008) https://doi.org/10.1117/12.799846

KEYWORDS: Indium arsenide, Ionization, Diodes, Avalanche photodetectors, Staring arrays, Mercury cadmium telluride, Avalanche photodiodes, Defense and security, Doping, Iron

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Proceedings Article | 11 January 2008 Paper

Effects of spacer growth temperature on the optical properties of quantum dot laser structures

N. Hasbullah, J. S. Ng, H. Y. Liu, M. Hopkinson, J. P. David, T. Badcock, D. Mowbray, A. Sanchez, R. Beanland

Proceedings Volume 6800, 68000U (2008) https://doi.org/10.1117/12.759663

KEYWORDS: Electroluminescence, Temperature metrology, Gallium arsenide, Quantum wells, Indium arsenide, Transmission electron microscopy, Quantum dots, Gallium, Quantum dot lasers, Optical properties

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Proceedings Article | 16 October 2007 Paper

The effects of monolayer thickness and sheet doping density on dark current and noise current in quantum dot infrared photodetectors

Chee Hing Tan, Souye C. Liew Tat Mun, Peter Vines, John David, Mark Hopkinson, Luke Wilson, Pantelis Aivaliotis

Proceedings Volume 6740, 67400J (2007) https://doi.org/10.1117/12.740701

KEYWORDS: Doping, Quantum dots, Quantum well infrared photodetectors, Infrared photography, Infrared radiation, Photodetectors, Gallium arsenide, Measurement devices, Spectrum analysis, Defense and security

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Proceedings Article | 16 October 2007 Paper

Fabrication of InAs photodiodes with reduced surface leakage current

Andrew Marshall, Chee Hing Tan, John David, Jo Shien Ng, Mark Hopkinson

Proceedings Volume 6740, 67400H (2007) https://doi.org/10.1117/12.740700

KEYWORDS: Indium arsenide, Etching, Photodiodes, Electrons, Staring arrays, Avalanche photodetectors, Surface finishing, Wet etching, Anisotropic etching, Mid-IR

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Proceedings Article | 5 October 2006 Paper

Optimisation of quantum dot infrared photodetectors (QDIPs) for imaging applications

P. Aivaliotis, E. Zibik, L. Wilson, J. David, M. Hopkinson, C. Groves

Proceedings Volume 6395, 63950B (2006) https://doi.org/10.1117/12.690049

KEYWORDS: Gallium arsenide, Indium arsenide, Quantum wells, Quantum well infrared photodetectors, Quantum dots, Infrared imaging, Infrared radiation, Gallium, Absorption, Staring arrays

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Proceedings Article | 18 August 2004 Paper

Excess noise characteristics of single heterojunction AlxGa1-xAs-GaAs avalanche photodiodes

Christopher Groves, John David, Peter Robson, Graham Rees

Proceedings Volume 5451, (2004) https://doi.org/10.1117/12.544872

KEYWORDS: Aluminum, Gallium, Heterojunctions, Gallium arsenide, Ionization, Monte Carlo methods, Avalanche photodetectors, Diodes, Electrons, Measurement devices

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Proceedings Article | 1 July 2003 Paper

Why small avalanche photodiodes are beautiful

Graham Rees, John David

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.482482

KEYWORDS: Ionization, Phonons, Monte Carlo methods, Avalanche photodetectors, Scattering, Gallium arsenide, PIN photodiodes, Diffusion, Avalanche photodiodes, Aluminum

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Proceedings Article | 29 October 2001 Paper

Design considerations for high-speed low-noise avalanche photodiodes

Beng Ng, Jo Ng, Paul Hambleton, John David, D. Ong, Graham Rees, Richard Tozer

Proceedings Volume 4594, (2001) https://doi.org/10.1117/12.446539

KEYWORDS: Avalanche photodetectors, Ionization, Performance modeling, Avalanche photodiodes, Statistical modeling, Space operations, Instrument modeling, Lithium, Chlorine, Solids

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Proceedings Article | 9 July 2001 Paper

How avalanche pulses evolve in space and time

S. Plimmer, Paul Hambleton, Beng Ng, G. Dunn, Jo Ng, John David, Graham Rees

Proceedings Volume 4283, (2001) https://doi.org/10.1117/12.432602

KEYWORDS: Electrons, Ionization, Monte Carlo methods, Avalanche photodetectors, Scattering, Performance modeling, Instrument modeling, Data modeling, Gallium arsenide, Avalanche photodiodes

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Proceedings Article | 12 June 2001 Paper

Avalanche multiplication noise in bulk and thin AI(x)Ga(1-x)As (x=0-0.8) PIN and NIP diodes

Beng Ng, John David, Chee Tan, S. Plimmer, Graham Rees, Richard Tozer, Mark Hopkinson

Proceedings Volume 4288, (2001) https://doi.org/10.1117/12.429437

KEYWORDS: Aluminum, Gallium, Diodes, PIN photodiodes, Ionization, Gallium arsenide, Solids, Reverse modeling, Silicon, Avalanche photodetectors

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Proceedings Article | 19 April 2000 Paper

Design of low-noise avalanche photodiodes

John David, Chee Tan, S. Plimmer, Graham Rees, Richard Tozer, Peter Robson

Proceedings Volume 3950, (2000) https://doi.org/10.1117/12.382172

KEYWORDS: Ionization, Gallium arsenide, Silicon, Avalanche photodetectors, Doping, Avalanche photodiodes, Diodes, Monte Carlo methods, Phonons, Modeling

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Proceedings Article | 15 March 2000 Paper

Avalanche multiplication and noise in submicron Si p-i-n diodes

Chee Tan, John David, J. Clark, Graham Rees, S. Plimmer, David Robbins, David Herbert, Roger Carline, Weng Leong

Proceedings Volume 3953, (2000) https://doi.org/10.1117/12.379602

KEYWORDS: Silicon, Diodes, Ionization, Avalanche photodetectors, Gallium arsenide, Data modeling, Reverse modeling, Doping, Helium neon lasers, Absorption

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Proceedings Article | 12 November 1999 Paper

Intracavity piezoelectric InGaAs/GaAs laser modulator

John David, E. Khoo, Arbinder Pabla, Jon Woodhead, R. Grey, Graham Rees

Proceedings Volume 3896, (1999) https://doi.org/10.1117/12.370303

KEYWORDS: Modulators, Absorption, Quantum wells, Gallium arsenide, Laser damage threshold, Modulation, Semiconductor lasers, Piezoelectric effects, Cladding

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Proceedings Article | 12 November 1999 Paper

Avalanche multiplication in AlxGa1-xAs/GaAs multilayer structures

C. Chia, John David, Graham Rees, S. Plimmer, R. Grey

Proceedings Volume 3896, (1999) https://doi.org/10.1117/12.370337

KEYWORDS: Gallium arsenide, Ionization, Aluminum, Heterojunctions, Monte Carlo methods, Solids, Phonons, Avalanche photodiodes, Cladding, Superlattices

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Proceedings Article | 2 May 1997 Paper

Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets

David Mowbray, Olgierd Kowalski, John Cockburn, Maurice Skolnick, Mark Hopkinson, John David

Proceedings Volume 3001, (1997) https://doi.org/10.1117/12.273781

KEYWORDS: Quantum wells, Aluminum, Electrons, Heterojunctions, Luminescence, Optical spectroscopy, Spectroscopy, Absorption, Gallium, Gallium arsenide

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Proceedings Article | 1 May 1997 Paper

VCSELs for 640- to 1100-nm emission

Terry Sale, John Roberts, John David, R. Grey, Peter Robson

Proceedings Volume 3004, (1997) https://doi.org/10.1117/12.273833

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Metalorganic chemical vapor deposition, Gallium arsenide, Mirrors, Resistance, Aluminum, Silicon, Reflectivity, Reflectors

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Proceedings Article | 4 April 1997 Paper

Temperature effects in VCSELs

Terry Sale, John Roberts, John David, R. Grey, Jon Woodhead, Peter Robson

Proceedings Volume 3003, (1997) https://doi.org/10.1117/12.271056

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Mirrors, Instrument modeling, Reflectivity, Thermal modeling, Resistance, Data modeling, Thermal effects, Oxides

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