Prof. John Gerard G. McInerney Profile

Prof. John Gerard G. McInerney

Professor/Dean at Univ College Cork

SPIE Involvement:

Conference Program Committee | Conference Chair | Author

Publications (50)

PROCEEDINGS ARTICLE | February 22, 2017

High power sub-200fs pulse generation from a colliding pulse modelocked VECSEL

Proc. SPIE. 10087, Vertical External Cavity Surface Emitting Lasers (VECSELs) VII

KEYWORDS: Semiconductors, Ultrafast phenomena, Mirrors, Quantum wells, Mode locking, High power lasers, Reflectivity, Physics, Semiconductor lasers, Frequency combs, Vertical external cavity surface emitting lasers, Pulsed laser operation, Ultrafast laser spectroscopy, Absorption

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PROCEEDINGS ARTICLE | March 14, 2016

Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

Proc. SPIE. 9734, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI

KEYWORDS: Mirrors, Second-harmonic generation, Crystals, Gallium arsenide, Resistance, Reflectivity, Semiconductor lasers, Nonlinear crystals, Absorption

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PROCEEDINGS ARTICLE | March 10, 2016

Colliding pulse mode-locked VECSEL

Proc. SPIE. 9734, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI

KEYWORDS: Semiconductors, Mirrors, Quantum wells, Femtosecond phenomena, Output couplers, Mode locking, Frequency metrology, Optical communications, Pulsed laser operation, Absorption

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PROCEEDINGS ARTICLE | February 22, 2011

Optimizing electrically pumped vertical extended cavity surface emitting semiconductor lasers (E-VECSELs)

Proc. SPIE. 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs)

KEYWORDS: Mirrors, Second-harmonic generation, Gallium arsenide, Resistance, Reflectivity, Semiconductor lasers, Vertical cavity surface emitting lasers, Nonlinear crystals, Absorption

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PROCEEDINGS ARTICLE | February 26, 2010

Inhomogeneous quantum dot gain medium for improved spatial coherence in wide-aperture semiconductor lasers

Proc. SPIE. 7597, Physics and Simulation of Optoelectronic Devices XVIII

KEYWORDS: Quantum wells, Laser development, Physics, Quantum dots, Semiconductor lasers, Optoelectronic devices, Finite element methods, Spatial coherence, Spatial resolution, Current controlled current source

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PROCEEDINGS ARTICLE | February 3, 2009

Bulk temperature mapping of broad area quantum dot lasers: modeling and micro-thermographic analysis

Proc. SPIE. 7230, Novel In-Plane Semiconductor Lasers VIII

KEYWORDS: Thermography, Cameras, High power lasers, Semiconductor lasers, Finite element methods, Spatial resolution, Thermal modeling, Quantum dot lasers, Temperature metrology, Instrument modeling

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PROCEEDINGS ARTICLE | March 23, 2007

Lateral mode dynamics in high-power wide-aperture quantum dot laser

Proc. SPIE. 6468, Physics and Simulation of Optoelectronic Devices XV

KEYWORDS: High power lasers, Diffusion, Quantum dots, Semiconductor lasers, Near field, Finite element methods, Thermal modeling, Stereolithography, Quantum dot lasers, Instrument modeling

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PROCEEDINGS ARTICLE | February 8, 2007

Robust passively mode-locked quantum-dot lasers with low timing jitter

Proc. SPIE. 6485, Novel In-Plane Semiconductor Lasers VI

KEYWORDS: Indium arsenide, Modulation, Mode locking, Control systems, Semiconductor lasers, Picosecond phenomena, Tolerancing, Pulsed laser operation, Quantum dot lasers, Temperature metrology

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PROCEEDINGS ARTICLE | February 28, 2006

Single lateral-mode broad area laser diodes by thermally profiled lateral refractive index: modeling and simulation

Proc. SPIE. 6115, Physics and Simulation of Optoelectronic Devices XIV

KEYWORDS: Refractive index, Continuous wave operation, High power lasers, Physics, Optoelectronic devices, Profiling, Optical simulations, Modeling and simulation, Broad area laser diodes, Temperature metrology

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SPIE Conference Volume | June 3, 2005

Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks

PROCEEDINGS ARTICLE | September 1, 2004

Damping and feedback characteristics of quantum dot semiconductor lasers

Proc. SPIE. 5452, Semiconductor Lasers and Laser Dynamics

KEYWORDS: Quantum wells, Calcium, Quantum dots, Semiconductor lasers, Laser stabilization, Measurement devices, Microwave radiation, Laser optics, Optical isolators, Quantum dot lasers

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PROCEEDINGS ARTICLE | June 14, 2004

Reduced sensitivity to external feedback in quantum dot lasers

Proc. SPIE. 5361, Quantum Dots, Nanoparticles, and Nanoclusters

KEYWORDS: Quantum wells, Waveguides, Quantum dots, Semiconductor lasers, Laser stabilization, Measurement devices, Microwave radiation, Laser optics, Optical isolators, Quantum dot lasers

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PROCEEDINGS ARTICLE | May 11, 2004

High-power ultra-fast single- and multi-mode quantum dot lasers with superior beam profile

Proc. SPIE. 5365, Novel In-Plane Semiconductor Lasers III

KEYWORDS: Quantum wells, Modulation, Waveguides, Cladding, Mode locking, Gallium arsenide, Semiconductor lasers, Diodes, Laser damage threshold, Gallium

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PROCEEDINGS ARTICLE | September 12, 2003

Compact efficient visible lasers based on extended-cavity surface-emitting lasers

Proc. SPIE. 4967, Genetically Engineered and Optical Probes for Biomedical Applications

KEYWORDS: Optical filters, Mirrors, Second-harmonic generation, Photography, Reliability, Laser applications, Optical testing, Semiconductor lasers, Nonlinear optics, Harmonic generation

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PROCEEDINGS ARTICLE | September 12, 2003

Second harmonic generation at 488 nm by intracavity doubling of extended-cavity surface-emitting lasers

Proc. SPIE. 4972, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications II

KEYWORDS: Mirrors, Spectrum analysis, Second-harmonic generation, Argon ion lasers, Reliability, Laser development, Semiconductor lasers, Diodes, Harmonic generation, Nonlinear crystals

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PROCEEDINGS ARTICLE | June 19, 2003

High-power high-brightness 980-nm lasers based on the extended cavity surface emitting lasers concept

Proc. SPIE. 4993, High-Power Fiber and Semiconductor Lasers

KEYWORDS: Mirrors, Second-harmonic generation, Lithium, High power lasers, Laser development, Reflectivity, Semiconductor lasers, Transmission electron microscopy, Vertical cavity surface emitting lasers

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PROCEEDINGS ARTICLE | June 17, 2003

Novel 980-nm and 490-nm light sources using vertical-cavity lasers with extended coupled cavities

Proc. SPIE. 4994, Vertical-Cavity Surface-Emitting Lasers VII

KEYWORDS: Mirrors, Light sources, Second-harmonic generation, High power lasers, Laser applications, Reflectivity, Single mode fibers, Transmission electron microscopy, Vertical cavity surface emitting lasers

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PROCEEDINGS ARTICLE | June 17, 2003

490-nm coherent emission by intracavity frequency doubling of extended cavity surface-emitting diode lasers

Proc. SPIE. 4994, Vertical-Cavity Surface-Emitting Lasers VII

KEYWORDS: Semiconductors, Second-harmonic generation, Polarization, Reliability, Laser applications, Laser development, Semiconductor lasers, Transmission electron microscopy, Laser stabilization, Diode pumped solid state lasers

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PROCEEDINGS ARTICLE | April 15, 2003

Novel 980-nm and 490-nm light sources using vertical cavity lasers with extended coupled cavities

Proc. SPIE. 4942, VCSELs and Optical Interconnects

KEYWORDS: Mirrors, Light sources, Second-harmonic generation, High power lasers, Laser applications, Reflectivity, Single mode fibers, Thermal effects, Nonlinear crystals

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PROCEEDINGS ARTICLE | March 11, 2003

High brightness 980 nm pump lasers ased on the Novalux extended cavity surface-emitting laser (NECSEL) concept

Proc. SPIE. 4947, Laser Diodes, Optoelectronic Devices, and Heterogenous Integration

KEYWORDS: Mirrors, Second-harmonic generation, Laser applications, Reflectivity, Single mode fibers, Semiconductor lasers, Transmission electron microscopy, Fiber couplers, Fiber coupled lasers

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PROCEEDINGS ARTICLE | March 11, 2003

Improved beam quality due to current profiling in a broad-area semiconductor laser

Proc. SPIE. 4947, Laser Diodes, Optoelectronic Devices, and Heterogenous Integration

KEYWORDS: Diffraction, Refractive index, Spatial filters, Physics, Semiconductor lasers, Near field, Profiling, Laser damage threshold, Vertical cavity surface emitting lasers, Near field optics

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SPIE Conference Volume | March 11, 2003

Laser Diodes, Optoelectronic Devices, and Heterogenous Integration

PROCEEDINGS ARTICLE | June 12, 2002

Current profiling in broad-area semiconductor lasers

Proc. SPIE. 4646, Physics and Simulation of Optoelectronic Devices X

KEYWORDS: Polarization, High power lasers, Physics, Numerical simulations, Semiconductor lasers, Near field, Profiling, Laser damage threshold, Vertical cavity surface emitting lasers, Near field optics

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PROCEEDINGS ARTICLE | May 22, 2002

Achieving spatial coherence in broad-area lasers using transverse-gain tailoring techniques

Proc. SPIE. 4651, Novel In-Plane Semiconductor Lasers

KEYWORDS: Continuous wave operation, Spatial filters, Single mode fibers, Semiconductor lasers, Near field, Thermal effects, Spatial coherence, Pulsed laser operation, Near field optics

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PROCEEDINGS ARTICLE | July 14, 2000

Toward filament-free semiconductor lasers

Proc. SPIE. 3944, Physics and Simulation of Optoelectronic Devices VIII

KEYWORDS: Semiconductors, Diffraction, Quantum wells, Modulation, Diffusion, Semiconductor lasers, Wave propagation, Profiling, Laser damage threshold

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PROCEEDINGS ARTICLE | July 14, 2000

Carrier cooling effects on the saturation characteristics of quantum well absorbers

Proc. SPIE. 3944, Physics and Simulation of Optoelectronic Devices VIII

KEYWORDS: Semiconductors, Quantum wells, Transparency, Mode locking, Physics, Semiconductor lasers, Excitons, Tellurium, Temperature metrology, Absorption

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PROCEEDINGS ARTICLE | May 1, 2000

Development of a red VCSEL-to-plastic fiber module for use in parallel optical data links

Proc. SPIE. 3946, Vertical-Cavity Surface-Emitting Lasers IV

KEYWORDS: Oxides, Thermal effects, Optical alignment, Vertical cavity surface emitting lasers, Semiconducting wafers, Internal quantum efficiency, Thermal modeling, Phase only filters, Absorption, Oxidation

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SPIE Journal Paper | April 1, 1999

Linewidth instability in a semiconductor laser due to feedback from a ring passive phase conjugate mirror

Bruce Liby, David Statman, John McInerney

OE Vol. 38 Issue 04

KEYWORDS: Semiconductor lasers, Phase conjugation, Mirrors, Reflectivity, Crystals, Reflectors, Laser crystals, Attenuators, Physics, Beam splitters

PROCEEDINGS ARTICLE | July 7, 1998

High-frequency fluctuations in semiconductor lasers with optical feedback

Proc. SPIE. 3283, Physics and Simulation of Optoelectronic Devices VI

KEYWORDS: Mirrors, Statistical analysis, Transient nonlinear optics, Semiconductor lasers, Laser damage threshold, Signal analyzers, Microwave radiation, Modes of laser operation, Laser optics, Statistical modeling

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PROCEEDINGS ARTICLE | April 20, 1998

Room-temperature cw operation of InGaAsP/InP microdisk lasers

Proc. SPIE. 3286, Vertical-Cavity Surface-Emitting Lasers II

KEYWORDS: Semiconductors, Continuous wave operation, Chemical species, Glasses, Photons, Free space, Semiconductor lasers, Optical pumping, Optical microcavities

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PROCEEDINGS ARTICLE | April 20, 1998

Off-axis emission from native-oxide-confined VCSELs

Proc. SPIE. 3286, Vertical-Cavity Surface-Emitting Lasers II

KEYWORDS: Oxides, Quantum wells, Lithium, Resonators, Laser applications, Near field, Laser resonators, Vertical cavity surface emitting lasers, Near field optics, Tin

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PROCEEDINGS ARTICLE | April 20, 1998

Transverse modes, patterns, and polarization behavior in VCSELs

Proc. SPIE. 3286, Vertical-Cavity Surface-Emitting Lasers II

KEYWORDS: Modeling, Refractive index, Modulation, Polarization, Birefringence, Gallium arsenide, Diffusion, Semiconductor lasers, Near field, Vertical cavity surface emitting lasers

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PROCEEDINGS ARTICLE | June 6, 1997

Modeling of master oscillator-power amplifier (MOPA) semiconductor lasers

Proc. SPIE. 2994, Physics and Simulation of Optoelectronic Devices V

KEYWORDS: Diffraction, Optical amplifiers, Semiconductor optical amplifiers, Oscillators, High power lasers, Amplifiers, Semiconductor lasers, Optical simulations, High power fiber amplifiers, Molybdenum

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PROCEEDINGS ARTICLE | June 6, 1997

Polarization dynamics and intensity noise in VCSELs

Proc. SPIE. 2994, Physics and Simulation of Optoelectronic Devices V

KEYWORDS: Bistability, Quantum wells, Switching, Radio optics, Polarization, Magnetism, Photodiodes, Power supplies, Vertical cavity surface emitting lasers, Anisotropy

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SPIE Journal Paper | December 1, 1994

Temperature dependence of transverse mode evolution in vertical cavity surface-emitting lasers

Yi-Guang Zhao, John McInerney, Robert Morgan

OE Vol. 33 Issue 12

KEYWORDS: Vertical cavity surface emitting lasers, Pulsed laser operation, Near field, Refractive index, Hole burning spectroscopy, Gallium arsenide, Thermal effects, Physics, Semiconductor lasers, Quantum wells

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PROCEEDINGS ARTICLE | June 30, 1994

Line-narrowing and stability of laser diodes with strong optical feedback from a nearby external reflector

Proc. SPIE. 2146, Physics and Simulation of Optoelectronic Devices II

KEYWORDS: Reflectors, Mirrors, Modulation, Reflectivity, Phase shift keying, Semiconductor lasers, Laser resonators, Laser stabilization, Modulation transfer functions, Laser optics

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PROCEEDINGS ARTICLE | December 1, 1993

Chaotic behavior of semiconductor lasers as modulated oscillator

Proc. SPIE. 2039, Chaos in Optics

KEYWORDS: Reflectors, Fabry–Perot interferometers, Oscillators, Modulation, Semiconductor lasers, Laser resonators, Nonlinear optics, Laser damage threshold, Feedback control, Chaos

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PROCEEDINGS ARTICLE | November 1, 1993

Numerical modeling of a novel TDM digital optical fiber communication link

Proc. SPIE. 2024, Multigigabit Fiber Communication Systems

KEYWORDS: Transmitters, Eye, Mode locking, Receivers, Telecommunications, Optical simulations, Picosecond phenomena, Time division multiplexing, Fiber optic communications, Data communications

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PROCEEDINGS ARTICLE | August 13, 1993

Design of external cavities for vertical-cavity semiconductor lasers

Proc. SPIE. 1868, Laser Resonators and Coherent Optics: Modeling, Technology, and Applications

KEYWORDS: Mirrors, Fabry–Perot interferometers, Resonators, High power lasers, Reflectivity, Semiconductor lasers, Spatial coherence, Vertical cavity surface emitting lasers, Spherical lenses, Tolerancing

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PROCEEDINGS ARTICLE | June 16, 1993

Resonant optical pumping of vertical-cavity semiconductor lasers

Proc. SPIE. 1850, Laser Diode Technology and Applications V

KEYWORDS: Mirrors, Quantum wells, Reflectivity, Computer simulations, Semiconductor lasers, Aluminum, Vertical cavity surface emitting lasers, Optical pumping, Technologies and applications, Absorption

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PROCEEDINGS ARTICLE | June 26, 1992

Widely tunable, high power external cavity semiconductor lasers

Proc. SPIE. 1634, Laser Diode Technology and Applications IV

KEYWORDS: Mirrors, Antireflective coatings, Tunable lasers, LIDAR, Spectroscopy, High power lasers, Semiconductor lasers, Optical clocks, Pulsed laser operation, Diffraction gratings

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PROCEEDINGS ARTICLE | June 26, 1992

Transverse-mode filtering of wide stripe semiconductor lasers using an external cavity

Proc. SPIE. 1634, Laser Diode Technology and Applications IV

KEYWORDS: Optical filters, Mirrors, Antireflective coatings, Biomedical optics, Waveguides, Laser applications, Reflectivity, Semiconductor lasers, Electronic filtering, Pulsed laser operation

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Semiconducft lasers which can produce high output jxwer in a single fundamental lateral mode have in recent years become a topic of signifxant research pj ss frr maximum energy transf& when coupling the laser output to other optical components h as waveguide, optical fibers, or beam forming optics Many applications, such as free-spe commuthcation, highSpCCd optical printing, and biomedical laser technology, could greatly benefit from advances in high power, single mo& laser thos Attempts at producing fundamental mode operation from varus types of laser arrays have met with only limited success. Wide stripe miconductcr lasers can produce high 1x,w& (-8 W), and require only the most basic fabricatiou steps. However, stripe widths of more than 1-2 μn produce multiple transverse m spectra and filamentation due to carrierinduced index variations. Filamentaüon can degrade the farfie1d psofile and cause angular beam steering at high ouqit power. Using an anti-reflection coated wide stripe laser within a simple external cavity, we have produced both high output power and fundamental moik operation in the lateral dimension by filtering out higher order modes in pulsed operation. Mode discrimination is realized using an unstable cavity in the lateral dimension. The unstable cavity was fonned using a cylindrical lens within the external cavity which causes the higher order mxies to be more kssy than the fundamental. A simple Gaussian beam wopagaon model was used to xedict the effts of cylindrical lens pIzement within the external cavity. With this inokl we were able to calculate an overlap integral, or modal coupling term for each transverse mode. In our model the coupling term was considered to be spatially independent and was used to estimate the effective reflectivity of the external cavity system. Ung the cakulated effective reflectivity the threshold gath requirement for ch of the higher order modes was calculated , in order to predict the optimum placement of the cylindrical lens. Threshold gain was plotted as a fimction of the effective reflectivity (mxJal overlap) in order to predict the optimum placement of the cylindrical lens. In experiment, a 100 μm wide stripe laser was coupled to the anamorphic external cavity. WIth this cocfiguration, we achieved a nearly diffraction-limited beam at greater than 250 mW; this reprents a ftcr of ten improvement over the external cavity without the cylindrical lens. Beam quality was maintained to 3 times the original (uncoated) threshold injection current with negligible steering effects.

PROCEEDINGS ARTICLE | June 26, 1992

Measurement of velocities by backscatter modulation in semiconductor injection lasers

Proc. SPIE. 1634, Laser Diode Technology and Applications IV

KEYWORDS: Semiconductors, Signal to noise ratio, Modulation, Doppler effect, Backscatter, Photons, Laser scattering, Photodiodes, Semiconductor lasers, Velocity measurements

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PROCEEDINGS ARTICLE | June 26, 1992

Laser assisted etching to fabricate a buried continuous graded cavity for unstable semiconductor laser diodes

Proc. SPIE. 1634, Laser Diode Technology and Applications IV

KEYWORDS: Etching, High power lasers, Gallium arsenide, Semiconductor materials, Laser applications, Semiconductor lasers, Diodes, Wet etching, Technologies and applications, Chemical lasers

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PROCEEDINGS ARTICLE | June 26, 1992

High-power, optically pumped, pulsed InGaAs/GaAs vertical-cavity surface-emitting semiconductor laser with resonant periodic gain at 918 nm

Proc. SPIE. 1634, Laser Diode Technology and Applications IV

KEYWORDS: Wafer-level optics, Lasers, High power lasers, Dye lasers, Semiconductor lasers, Laser damage threshold, Vertical cavity surface emitting lasers, Optical pumping, Technologies and applications, Semiconducting wafers

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PROCEEDINGS ARTICLE | March 1, 1991

Reduction of spectral linewidth and FM noise in semiconductor lasers by application of optical feedback

Proc. SPIE. 1376, Laser Noise

KEYWORDS: Semiconductors, Reflectors, Mirrors, Resonators, Laser applications, Reflectivity, Semiconductor lasers, Laser resonators, Frequency modulation, Fermium

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PROCEEDINGS ARTICLE | March 1, 1991

Low-frequency intensity fluctuations in external cavity semiconductor lasers

Proc. SPIE. 1376, Laser Noise

KEYWORDS: Semiconductors, Data storage, Photons, Reflectivity, Fiber lasers, Semiconductor lasers, Laser damage threshold, Laser optics, Stochastic processes, Chaos

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PROCEEDINGS ARTICLE | October 1, 1990

Optical bistability and switching by nonlinear waveguiding in semiconductor lasers and laser amplifiers

Proc. SPIE. 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors

KEYWORDS: Bistability, Switches, Optical amplifiers, Switching, Sensors, Diffusion, Semiconductor lasers, Wave propagation, Electro optical sensors, Electro optical modeling

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PROCEEDINGS ARTICLE | May 1, 1990

Mode stability and spectral properties of resonant periodic gain surface-emitting lasers

Proc. SPIE. 1219, Laser Diode Technology and Applications II

KEYWORDS: Quantum wells, Continuous wave operation, High power lasers, Laser applications, Semiconductor lasers, Wave propagation, Laser resonators, Laser stabilization, Optical pumping, Near field optics

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PROCEEDINGS ARTICLE | May 1, 1990

Vertical cavity surface-emitting semiconductor lasers with injection laser pumping

Proc. SPIE. 1219, Laser Diode Technology and Applications II

KEYWORDS: Beam splitters, Quantum wells, Continuous wave operation, Quantum efficiency, Laser applications, Laser development, Semiconductor lasers, Laser damage threshold, Vertical cavity surface emitting lasers, Optical pumping

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Showing 5 of 50 publications

Conference Committee Involvement (12)

Semiconductor Lasers and Laser Dynamics

12 April 2010 | Brussels, Belgium

Vertical-Cavity Surface-Emitting Lasers XII

23 January 2008 | San Jose, California, United States

Vertical-Cavity Surface-Emitting Lasers XI

24 January 2007 | San Jose, California, United States

Vertical-Cavity Surface-Emitting Lasers X

25 January 2006 | San Jose, California, United States

Optoelectronics and Photonic Devices

5 April 2005 | Dublin, Ireland

Showing 5 of 12 published special sections

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