Dr. John M. Zavada Profile

Dr. John M. Zavada

Adjunct Professor at

SPIE Involvement:

Fellow status | Conference Program Committee | Conference Chair | Editor | Author

Publications (20)

SPIE Conference Volume | November 15, 2017

Terahertz Emitters, Receivers, and Applications VIII

SPIE Conference Volume | December 13, 2016

Terahertz Emitters, Receivers, and Applications VII

PROCEEDINGS ARTICLE | February 24, 2016

Optical excitation of Er centers in GaN epilayers grown by MOCVD

Proc. SPIE. 9744, Optical Components and Materials XIII

KEYWORDS: Semiconductors, Spectroscopy, Luminescence, Electrons, Chemical vapor deposition, Gallium nitride, Erbium, Signal detection, Active optics

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SPIE Conference Volume | September 9, 2015

Terahertz Emitters, Receivers, and Applications VI

SPIE Conference Volume | October 7, 2014

Terahertz Emitters, Receivers, and Applications V

SPIE Conference Volume | October 10, 2013

Terahertz Emitters, Receivers, and Applications IV

SPIE Conference Volume | October 11, 2012

Terahertz Emitters, Receivers, and Applications III

SPIE Conference Volume | September 6, 2011

Terahertz Emitters, Receivers, and Applications II

PROCEEDINGS ARTICLE | March 12, 2010

Magnetic cages of GaN nanoclusters doped with Gd and Nd

Proc. SPIE. 7602, Gallium Nitride Materials and Devices V

KEYWORDS: Electronics, Ferromagnetics, Chemical species, Electrons, Magnetism, Doping, Gallium nitride, Neodymium, Gadolinium, Gallium

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PROCEEDINGS ARTICLE | February 26, 2010

1.54 μm emitter and optical amplifier based on Er doped InGaN/GaN

Proc. SPIE. 7598, Optical Components and Materials VII

KEYWORDS: Semiconductors, Photonic devices, Light emitting diodes, Optical amplifiers, Ions, Gallium nitride, Erbium, Photonic integrated circuits, Metalorganic chemical vapor deposition, Absorption

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PROCEEDINGS ARTICLE | February 17, 2010

Enhanced 5-µm emission in Tm,Tb: KPb[sub]2[/sub]Br[sub]5[/sub] and Tm,Nd:KPb[sub]2[/sub]Br[sub]5[/sub] for mid-infrared laser applications

Proc. SPIE. 7578, Solid State Lasers XIX: Technology and Devices

KEYWORDS: Mid-IR, Energy efficiency, Energy transfer, Ions, Laser applications, Terbium, Thulium, Neodymium, Bromine, Absorption

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PROCEEDINGS ARTICLE | February 28, 2006

Realization of tunable photonic crystals based on the metal-insulator transition of VO₂

Proc. SPIE. 6128, Photonic Crystal Materials and Devices IV

KEYWORDS: Semiconductors, Finite-difference time-domain method, Modulation, Electrodes, Dielectrics, Silicon, Photonic crystals, Transition metals, Wave propagation, Photonic integrated circuits

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PROCEEDINGS ARTICLE | February 28, 2006

Mid-infrared (3-5 μm) emission from rare earth doped KPb₂Br₅

Proc. SPIE. 6100, Solid State Lasers XV: Technology and Devices

KEYWORDS: Crystals, Laser applications, Solid state lasers, Dysprosium, Phonons, Erbium, Neodymium, Fluorine, Bromine, Absorption

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PROCEEDINGS ARTICLE | February 22, 2006

GaN light-emitting triodes for high-efficiency hole injection and light emission

Proc. SPIE. 6134, Light-Emitting Diodes: Research, Manufacturing, and Applications X

KEYWORDS: Electron beam lithography, Energy efficiency, Light emitting diodes, Ultraviolet radiation, Ultraviolet light emitting diodes, Gallium nitride, Aluminum, Gallium, Superlattices, Laser sintering

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PROCEEDINGS ARTICLE | June 21, 2004

Analysis of nitride-based quantum well LEDs and novel white LED design

Proc. SPIE. 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII

KEYWORDS: Quantum wells, Light emitting diodes, Polarization, Optical properties, Chromium, Gallium nitride, Indium gallium nitride, Gallium, Indium nitride, Dielectric polarization

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PROCEEDINGS ARTICLE | April 17, 2000

Optical properties of AlN/sapphire grown at high and low temperatures studied by variable angle spectroscopic ellipsometry and micro Raman scattering

Proc. SPIE. 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV

KEYWORDS: Reflection, Raman spectroscopy, Gallium nitride, Sapphire, Solids, Spectroscopic ellipsometry, Phonons, Raman scattering, Temperature metrology, High temperature raman spectroscopy

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PROCEEDINGS ARTICLE | April 13, 2000

Effect of impurity concentration on 1.54 um emission from GaN:Er

Proc. SPIE. 3942, Rare-Earth-Doped Materials and Devices IV

KEYWORDS: Carbon, Luminescence, Surface roughness, Doping, Atomic force microscopy, Oxygen, Scanning electron microscopy, Gallium nitride, Erbium, Gallium

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PROCEEDINGS ARTICLE | April 14, 1999

Optical anisotropy of GaN/sapphire studied by generalized ellipsometry and Raman scattering

Proc. SPIE. 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III

KEYWORDS: Optical components, Ellipsometry, Polarization, Raman spectroscopy, Gallium nitride, Sapphire, Phonons, Raman scattering, Astatine, Anisotropy

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PROCEEDINGS ARTICLE | April 1, 1999

1.55-um Er-doped GaN LED

Proc. SPIE. 3622, Rare-Earth-Doped Materials and Devices III

KEYWORDS: Semiconductors, Light emitting diodes, Annealing, Dielectrics, Ions, Silicon, Electroluminescence, Gallium nitride, Diodes, Erbium

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PROCEEDINGS ARTICLE | January 20, 1994

BMDO/U.S. Army electronics and optical materials research program

Proc. SPIE. 2042, Photopolymers and Applications in Holography, Optical Data Storage, Optical Sensors, and Interconnects

KEYWORDS: Defense and security, Semiconductors, Electronics, Light emitting diodes, Semiconductor materials, Laser development, Missiles, Defense technologies, Defense systems

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