Dr. John M. Zavada Profile

Dr. John M. Zavada

Adjunct Professor at

SPIE Involvement:

Fellow status | Conference Chair | Conference Program Committee | Editor | Author

Publications (19)

SPIE Conference Volume | December 13, 2016

Terahertz Emitters, Receivers, and Applications VII

PROCEEDINGS ARTICLE | February 24, 2016

Optical excitation of Er centers in GaN epilayers grown by MOCVD

Proc. SPIE. 9744, Optical Components and Materials XIII

KEYWORDS: Erbium, Gallium nitride, Luminescence, Semiconductors, Active optics, Chemical vapor deposition, Electrons, Signal detection, Spectroscopy

Read Abstract

SPIE Conference Volume | September 9, 2015

Terahertz Emitters, Receivers, and Applications VI

SPIE Conference Volume | October 7, 2014

Terahertz Emitters, Receivers, and Applications V

SPIE Conference Volume | October 10, 2013

Terahertz Emitters, Receivers, and Applications IV

SPIE Conference Volume | October 11, 2012

Terahertz Emitters, Receivers, and Applications III

SPIE Conference Volume | September 6, 2011

Terahertz Emitters, Receivers, and Applications II

PROCEEDINGS ARTICLE | March 12, 2010

Magnetic cages of GaN nanoclusters doped with Gd and Nd

Proc. SPIE. 7602, Gallium Nitride Materials and Devices V

KEYWORDS: Chemical species, Gallium nitride, Gadolinium, Neodymium, Magnetism, Gallium, Electronics, Electrons, Doping, Ferromagnetics

Read Abstract

PROCEEDINGS ARTICLE | February 26, 2010

1.54 μm emitter and optical amplifier based on Er doped InGaN/GaN

Proc. SPIE. 7598, Optical Components and Materials VII

KEYWORDS: Erbium, Light emitting diodes, Gallium nitride, Optical amplifiers, Absorption, Metalorganic chemical vapor deposition, Semiconductors, Ions, Photonic integrated circuits, Photonic devices

Read Abstract

PROCEEDINGS ARTICLE | February 17, 2010

Enhanced 5-µm emission in Tm,Tb: KPb[sub]2[/sub]Br[sub]5[/sub] and Tm,Nd:KPb[sub]2[/sub]Br[sub]5[/sub] for mid-infrared laser applications

Proc. SPIE. 7578, Solid State Lasers XIX: Technology and Devices

KEYWORDS: Thulium, Energy transfer, Neodymium, Terbium, Absorption, Ions, Energy efficiency, Laser applications, Bromine, Mid-IR

Read Abstract

PROCEEDINGS ARTICLE | February 28, 2006

Mid-infrared (3-5 μm) emission from rare earth doped KPb₂Br₅

Proc. SPIE. 6100, Solid State Lasers XV: Technology and Devices

KEYWORDS: Dysprosium, Absorption, Neodymium, Erbium, Crystals, Fluorine, Phonons, Solid state lasers, Bromine, Laser applications

Read Abstract

PROCEEDINGS ARTICLE | February 28, 2006

Realization of tunable photonic crystals based on the metal-insulator transition of VO₂

Proc. SPIE. 6128, Photonic Crystal Materials and Devices IV

KEYWORDS: Dielectrics, Finite-difference time-domain method, Transition metals, Wave propagation, Semiconductors, Photonic crystals, Electrodes, Silicon, Modulation, Photonic integrated circuits

Read Abstract

PROCEEDINGS ARTICLE | February 22, 2006

GaN light-emitting triodes for high-efficiency hole injection and light emission

Proc. SPIE. 6134, Light-Emitting Diodes: Research, Manufacturing, and Applications X

KEYWORDS: Light emitting diodes, Ultraviolet radiation, Electron beam lithography, Aluminum, Gallium, Laser sintering, Gallium nitride, Ultraviolet light emitting diodes, Superlattices, Energy efficiency

Read Abstract

PROCEEDINGS ARTICLE | June 21, 2004

Analysis of nitride-based quantum well LEDs and novel white LED design

Proc. SPIE. 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII

KEYWORDS: Quantum wells, Light emitting diodes, Gallium, Gallium nitride, Indium nitride, Optical properties, Chromium, Dielectric polarization, Polarization, Indium gallium nitride

Read Abstract

PROCEEDINGS ARTICLE | April 17, 2000

Optical properties of AlN/sapphire grown at high and low temperatures studied by variable angle spectroscopic ellipsometry and micro Raman scattering

Proc. SPIE. 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV

KEYWORDS: Phonons, Sapphire, Raman scattering, Spectroscopic ellipsometry, High temperature raman spectroscopy, Raman spectroscopy, Reflection, Gallium nitride, Solids, Temperature metrology

Read Abstract

PROCEEDINGS ARTICLE | April 13, 2000

Effect of impurity concentration on 1.54 um emission from GaN:Er

Proc. SPIE. 3942, Rare-Earth-Doped Materials and Devices IV

KEYWORDS: Erbium, Gallium nitride, Carbon, Luminescence, Oxygen, Atomic force microscopy, Scanning electron microscopy, Gallium, Surface roughness, Doping

Read Abstract

PROCEEDINGS ARTICLE | April 14, 1999

Optical anisotropy of GaN/sapphire studied by generalized ellipsometry and Raman scattering

Proc. SPIE. 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III

KEYWORDS: Gallium nitride, Sapphire, Phonons, Anisotropy, Raman scattering, Raman spectroscopy, Ellipsometry, Astatine, Optical components, Polarization

Read Abstract

PROCEEDINGS ARTICLE | April 1, 1999

1.55-um Er-doped GaN LED

Proc. SPIE. 3622, Rare-Earth-Doped Materials and Devices III

KEYWORDS: Erbium, Gallium nitride, Silicon, Semiconductors, Electroluminescence, Annealing, Ions, Dielectrics, Light emitting diodes, Diodes

Read Abstract

PROCEEDINGS ARTICLE | January 20, 1994

BMDO/U.S. Army electronics and optical materials research program

Proc. SPIE. 2042, Photopolymers and Applications in Holography, Optical Data Storage, Optical Sensors, and Interconnects

KEYWORDS: Defense and security, Electronics, Missiles, Defense technologies, Laser development, Light emitting diodes, Semiconductor materials, Defense systems, Semiconductors, New and emerging technologies

Read Abstract