Dr. Jonathan F. Heffernan Profile

Dr. Jonathan F. Heffernan

Director Advanced Optical Devices Group at Sharp Labs of Europe Ltd

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Author

Publications (4)

Proceedings Article | 8 February 2007 Paper

Long lifetime cw InGaN laser diodes by molecular beam epitaxy

M. Kauer, W. S. Tan, S. Hooper, J. Barnes, J. Heffernan

Proceedings Volume 6473, 64730Y (2007) https://doi.org/10.1117/12.696721

KEYWORDS: Semiconductor lasers, Continuous wave operation, Gallium nitride, Indium gallium nitride, Metalorganic chemical vapor deposition, Waveguides, Molecular beam epitaxy, Quantum wells, Laser damage threshold

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Proceedings Article | 22 February 2006 Paper

Characteristics of CW violet laser diodes grown by MBE

J. Heffernan, M. Kauer, S. Hooper, V. Bousquet, J. Windle, T. Smeeton, J. Barnes

Proceedings Volume 6133, 61330O (2006) https://doi.org/10.1117/12.646047

KEYWORDS: Continuous wave operation, Semiconductor lasers, Gallium nitride, Laser damage threshold, Aluminum, Cladding, Waveguides, Quantum wells, Sapphire, Indium gallium nitride

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Proceedings Article | 1 April 2005 Paper

InGaN laser diodes by molecular beam epitaxy

M. Kauer, J. Heffernan, S. Hooper, V. Bousquet, K. Johnson, C. Zellweger

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.597027

KEYWORDS: Semiconductor lasers, Gallium nitride, Indium gallium nitride, Laser damage threshold, Waveguides, Sapphire, Molecular beam epitaxy, Optoelectronic devices, Aluminum, Gallium

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Proceedings Article | 1 May 1996 Paper

Optical gain in ZnCdSe-ZnSe quantum well structures

Paul Rees, Jon. Heffernan, Fred Logue, John Donegan, Christopher Jordan, John Hegarty, Futoshi Hiei, Akira Ishibashi

Proceedings Volume 2693, (1996) https://doi.org/10.1117/12.238946

KEYWORDS: Quantum wells, Electrons, Laser damage threshold, Temperature metrology, Semiconductor lasers, Scattering, Excitons, Cladding, Solids, Transparency

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