Prof. Jong-In Shim Profile

Prof. Jong-In Shim

Professor at Hanyang Univ

SPIE Involvement:

Conference Program Committee | Author | Editor

Publications (20)

Proceedings Article | 16 March 2024 Presentation

Next generation light emitting device for microLED Display: ZOGAN LED

Yungryel Ryu, Sung K. Hong, Sang-Mook Kim, Tae-Hoon Chung, Jong Hyeob Baek, Dong-Min Jeon, Dong-Soo Shin, Jong-In Shim

Proceedings Volume PC12887, PC128870S (2024) https://doi.org/10.1117/12.3011339

KEYWORDS: Light emitting diodes, LED displays, Gallium nitride, External quantum efficiency

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Proceedings Article | 21 March 2023 Poster

Influence of forward-current stress on the generation of deep-level traps in InGaN/GaN blue micro-LEDs

A. B. M. Hamidul Islam, Tae Kyoung Kim, Yu-Jung Cha, Jae Won Seo, Jiun Oh, Jong-In Shim, Dong-Soo Shin, Joon Seop Kwak

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2655656

KEYWORDS: External quantum efficiency, Wet etching, Quantum wells, Optoelectronics, Light emitting diodes, Gallium, Dry etching

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Proceedings Article | 7 March 2022 Poster

Size-dependent variation of efficiency in InGaN-based flip-chip near ultraviolet and blue micro light-emitting diodes

A. B. M. Hamidul Islam, Tae Kyoung Kim, Yu-Jung Cha, Jae Won Seo, Dong-Soo Shin, Jong-In Shim, Joon Seop Kwak

Proceedings Volume PC12022, PC1202217 (2022) https://doi.org/10.1117/12.2625718

KEYWORDS: External quantum efficiency, Near ultraviolet, Light emitting diodes, Semiconducting wafers, Resistance, Optoelectronics, Optical testing, Etching, Electroluminescence

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Proceedings Article | 5 March 2022 Presentation

Hybrid LED and applications

Yungryel Ryu, Sungki Hong, Sung Son, Jong In Shim

Proceedings Volume PC12002, PC1200211 (2022) https://doi.org/10.1117/12.2626268

KEYWORDS: LED displays, Light emitting diodes, Semiconductors, Oxides, Organic light emitting diodes, Gallium nitride

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Proceedings Article | 10 March 2020 Presentation

Strain relaxation caused by defects in InGaN-based multiple-quantum-well near-ultraviolet light-emitting diodes investigated by macroscopic characterization (Conference Presentation)

A.B.M. Hamidul Islam, Dong-Soo Shin, Joon Seop Kwak, Jong-In Shim

Proceedings Volume 11280, 1128014 (2020) https://doi.org/10.1117/12.2544036

KEYWORDS: Light emitting diodes, Near ultraviolet, Crystals, Optoelectronics, Microscopy

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Proceedings Article | 12 July 2017 Paper

Investigation of optical processes in InGaN-based light-emitting diodes using electroreflectance and photocurrent spectroscopies

Gyeong Won Lee, Gyu-Hyeong Cho, Jong-In Shim, Dong-Soo Shin

Proceedings Volume 10324, 1032402 (2017) https://doi.org/10.1117/12.2266495

KEYWORDS: Light emitting diodes, Spectroscopes, Electroluminescence, Temperature metrology, Absorption, Statistical analysis, Green light emitting diodes, Spectroscopy, Photons, Quantum wells, Indium, Gallium nitride, Optoelectronic devices, Imaging spectroscopy

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Proceedings Article | 13 March 2015 Paper

Nonradiative recombination mechanisms in InGaN/GaN light-emitting diodes analyzed by various device characterization techniques

Dong-Soo Shin, Dong-Pyo Han, Dong-Guang Zheng, Chan-Hyoung Oh, Hyun-Sung Kim, Kyu-Sang Kim, Jong-In Shim

Proceedings Volume 9363, 93632H (2015) https://doi.org/10.1117/12.2078970

KEYWORDS: Light emitting diodes, External quantum efficiency, Quantum wells, Electroluminescence, Electrons, Gallium nitride, Blue light emitting diodes, General lighting, Crystals, Standards development

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Proceedings Article | 8 March 2014 Paper

Low temperature studies of the efficiency droop in InGaN-based light-emitting diodes

Jong-In Shim, Hyunsung Kim, Dong-Pyo Han, Dong-Soo Shin, Kyu Sang Kim

Proceedings Volume 8986, 89861S (2014) https://doi.org/10.1117/12.2037986

KEYWORDS: Light emitting diodes, Quantum wells, Electroluminescence, Cryogenics, Electrons, Green light emitting diodes, Internal quantum efficiency, Quantum efficiency, External quantum efficiency, Semiconductor lasers

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Proceedings Article | 28 February 2012 Paper

Highly efficient InGaN/GaN blue LED on 8-inch Si (111) substrate

Jun-Youn Kim, Youngjo Tak, Jaekyun Kim, Hyun-Gi Hong, Suhee Chae, Jae Won Lee, Hyoji Choi, Youngsoo Park, U-In Chung, Jong-Ryeol Kim, Jong-In Shim

Proceedings Volume 8262, 82621D (2012) https://doi.org/10.1117/12.913250

KEYWORDS: Silicon, Light emitting diodes, Semiconducting wafers, Gallium nitride, Crystals, Sapphire, Atomic force microscopy, Epitaxy, Blue light emitting diodes, Internal quantum efficiency

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Proceedings Article | 24 September 2011 Paper

Highly efficient InGaN/GaN blue LEDs on large diameter Si (111) substrates comparable to those on sapphire

Jun-Youn Kim, Yongjo Tak, Hyun-Gi Hong, Suhee Chae, Jae Won Lee, Hyoji Choi, Jae Kyun Kim, Bokki Min, Youngsoo Park, U-In Chung, Minho Kim, Seongsuk Lee, Namgoo Cha, Yoonhee Shin, Cheolsoo Sone, Jong-Ryeol Kim, Jong-In Shim

Proceedings Volume 8123, 81230A (2011) https://doi.org/10.1117/12.892441

KEYWORDS: Silicon, Light emitting diodes, Gallium nitride, Sapphire, Crystals, Semiconducting wafers, Quantum dot light emitting diodes, Blue light emitting diodes, Atomic force microscopy, Very large scale integration

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Proceedings Article | 4 March 2011 Paper

Measurement of nonuniform bowing in GaN/sapphire epi-wafers and subsequent stress analysis by using a theoretical model

Yuseong Jang, Dong-Hyun Jang, Jong-In Shim, Dong-Soo Shin

Proceedings Volume 7939, 79392B (2011) https://doi.org/10.1117/12.874127

KEYWORDS: Semiconducting wafers, Light emitting diodes, Gallium nitride, Data modeling, Stress analysis, Sapphire, Sensors, Optical properties, Luminescence, 3D image processing

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Proceedings Article | 4 March 2011 Paper

Inhomogeneous carrier distribution in InGaN multiple quantum wells and its influences on device performances

Han-Youl Ryu, Jong-In Shim

Proceedings Volume 7939, 79390N (2011) https://doi.org/10.1117/12.874105

KEYWORDS: Quantum wells, Light emitting diodes, Indium gallium nitride, Polarization, Electrons, Electroluminescence, Gallium nitride, Numerical simulations, Blue light emitting diodes, Quantum dots

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Proceedings Article | 4 March 2011 Paper

An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodes

Jong-In Shim, Hyunsung Kim, Dong-Soo Shin, Han-Youl Ryu

Proceedings Volume 7939, 79391A (2011) https://doi.org/10.1117/12.874304

KEYWORDS: Quantum wells, Light emitting diodes, Electrons, Indium gallium nitride, Electroluminescence, Temperature metrology, Green light emitting diodes, Internal quantum efficiency, Optical testing, Luminescence

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Proceedings Article | 16 February 2009 Paper

Current spreading and its related issues in GaN-based light emitting diodes

Jong-In Shim, Joosun Yun, Hyunsung Kim

Proceedings Volume 7216, 72160V (2009) https://doi.org/10.1117/12.808393

KEYWORDS: Light emitting diodes, Electrodes, Metals, Internal quantum efficiency, Resistance, Temperature metrology, Reliability, Circuit switching, Quantum efficiency, Semiconductors

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Proceedings Article | 18 November 2008 Paper

Design and characterization issues in GaN-based light emitting diodes

Jong-In Shim

Proceedings Volume 7135, 71350C (2008) https://doi.org/10.1117/12.802605

KEYWORDS: Light emitting diodes, Electrodes, Metals, Reliability, Resistance, Semiconductors, Crystals, Circuit switching, Diodes, Indium gallium nitride

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Proceedings Article | 15 January 2008 Paper

Current spreading analysis in vertical electrode GaN-based blue LEDs

Joo Sun Yun, Sung Min Hwang, Jong In Shim

Proceedings Volume 6841, 68410L (2008) https://doi.org/10.1117/12.756517

KEYWORDS: Light emitting diodes, Circuit switching, Resistance, Blue light emitting diodes, Diodes, Electrodes, Resistors, Quantitative analysis, Metals, Quantum wells

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Proceedings Article | 7 January 2008 Paper

Strain analysis in pseudomorphically grown GaN-based multiple epitaxial layers

Donghyun Jang, Jongin Shim

Proceedings Volume 6824, 68240V (2008) https://doi.org/10.1117/12.757296

KEYWORDS: Crystals, Gallium nitride, Strain analysis, Polarization, Aluminum, Gallium, Indium gallium nitride, Multilayers, Semiconducting wafers, Semiconductor lasers

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Proceedings Article | 6 October 2006 Paper

Waveguide structural effect on ripples of far-field pattern in 405-nm GaN-based laser diodes

Sungmin Hwang, Jongin Shim, Hanyoul Ryu, Kyung-ho Ha, Junghye Chae, Okhyun Nam

Proceedings Volume 6352, 63521J (2006) https://doi.org/10.1117/12.691215

KEYWORDS: Waveguides, Semiconductor lasers, Gallium, Refractive index, Gallium nitride, Aluminum, Near field optics, Cladding, Active optics, Waveguide modes

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Proceedings Article | 5 October 2006 Paper

Highly integrated 10Gb/s optical sub-assembly and its circuit modeling

Jongin Shim, Dongchurl Kim

Proceedings Volume 6352, 63520D (2006) https://doi.org/10.1117/12.687391

KEYWORDS: Lead, Circuit switching, Transceivers, Aluminum nitride, Semiconductor lasers, Waveguides, Integrated optics, Transmitters, Capacitance, Resistors

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