Prof. Jong-In Shim Profile

Prof. Jong-In Shim

Professor at Hanyang Univ

SPIE Involvement:

Conference Program Committee | Conference Co-Chair | Conference Chair | Author | Editor

Publications (19)

SPIE Conference Volume | May 23, 2018

Gallium Nitride Materials and Devices XIII

PROCEEDINGS ARTICLE | July 12, 2017

Investigation of optical processes in InGaN-based light-emitting diodes using electroreflectance and photocurrent spectroscopies

Proc. SPIE. 10324, International Conference on Nano-Bio Sensing, Imaging, and Spectroscopy 2017

KEYWORDS: Quantum wells, Light emitting diodes, Statistical analysis, Spectroscopy, Photons, Indium, Imaging spectroscopy, Electroluminescence, Gallium nitride, Optoelectronic devices, Green light emitting diodes, Spectroscopes, Temperature metrology, Absorption

SPIE Conference Volume | March 27, 2017

Gallium Nitride Materials and Devices XII

SPIE Conference Volume | July 21, 2016

Gallium Nitride Materials and Devices XI

SPIE Conference Volume | April 30, 2015

Gallium Nitride Materials and Devices X

PROCEEDINGS ARTICLE | March 13, 2015

Nonradiative recombination mechanisms in InGaN/GaN light-emitting diodes analyzed by various device characterization techniques

Proc. SPIE. 9363, Gallium Nitride Materials and Devices X

KEYWORDS: Quantum wells, Light emitting diodes, External quantum efficiency, Crystals, Electrons, Electroluminescence, Gallium nitride, General lighting, Standards development, Blue light emitting diodes

PROCEEDINGS ARTICLE | March 8, 2014

Low temperature studies of the efficiency droop in InGaN-based light-emitting diodes

Proc. SPIE. 8986, Gallium Nitride Materials and Devices IX

KEYWORDS: Quantum wells, Light emitting diodes, External quantum efficiency, Electrons, Quantum efficiency, Electroluminescence, Semiconductor lasers, Green light emitting diodes, Internal quantum efficiency, Cryogenics

PROCEEDINGS ARTICLE | February 28, 2012

Highly efficient InGaN/GaN blue LED on 8-inch Si (111) substrate

Proc. SPIE. 8262, Gallium Nitride Materials and Devices VII

KEYWORDS: Light emitting diodes, Crystals, Silicon, Atomic force microscopy, Gallium nitride, Sapphire, Epitaxy, Semiconducting wafers, Internal quantum efficiency, Blue light emitting diodes

PROCEEDINGS ARTICLE | September 24, 2011

Highly efficient InGaN/GaN blue LEDs on large diameter Si (111) substrates comparable to those on sapphire

Proc. SPIE. 8123, Eleventh International Conference on Solid State Lighting

KEYWORDS: Light emitting diodes, Crystals, Silicon, Atomic force microscopy, Gallium nitride, Sapphire, Very large scale integration, Semiconducting wafers, Quantum dot light emitting diodes, Blue light emitting diodes

PROCEEDINGS ARTICLE | March 4, 2011

Measurement of nonuniform bowing in GaN/sapphire epi-wafers and subsequent stress analysis by using a theoretical model

Proc. SPIE. 7939, Gallium Nitride Materials and Devices VI

KEYWORDS: Light emitting diodes, Data modeling, Optical properties, Sensors, Luminescence, Gallium nitride, Sapphire, Stress analysis, Semiconducting wafers, 3D image processing

PROCEEDINGS ARTICLE | March 4, 2011

An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodes

Proc. SPIE. 7939, Gallium Nitride Materials and Devices VI

KEYWORDS: Quantum wells, Light emitting diodes, Luminescence, Electrons, Electroluminescence, Optical testing, Indium gallium nitride, Green light emitting diodes, Internal quantum efficiency, Temperature metrology

PROCEEDINGS ARTICLE | March 4, 2011

Inhomogeneous carrier distribution in InGaN multiple quantum wells and its influences on device performances

Proc. SPIE. 7939, Gallium Nitride Materials and Devices VI

KEYWORDS: Quantum wells, Light emitting diodes, Polarization, Electrons, Numerical simulations, Electroluminescence, Quantum dots, Gallium nitride, Indium gallium nitride, Blue light emitting diodes

PROCEEDINGS ARTICLE | February 16, 2009

Current spreading and its related issues in GaN-based light emitting diodes

Proc. SPIE. 7216, Gallium Nitride Materials and Devices IV

KEYWORDS: Semiconductors, Light emitting diodes, Electrodes, Metals, Quantum efficiency, Reliability, Resistance, Internal quantum efficiency, Circuit switching, Temperature metrology

PROCEEDINGS ARTICLE | November 18, 2008

Design and characterization issues in GaN-based light emitting diodes

Proc. SPIE. 7135, Optoelectronic Materials and Devices III

KEYWORDS: Semiconductors, Light emitting diodes, Electrodes, Metals, Crystals, Reliability, Resistance, Diodes, Indium gallium nitride, Circuit switching

PROCEEDINGS ARTICLE | January 15, 2008

Current spreading analysis in vertical electrode GaN-based blue LEDs

Proc. SPIE. 6841, Solid State Lighting and Solar Energy Technologies

KEYWORDS: Quantum wells, Light emitting diodes, Electrodes, Metals, Resistance, Quantitative analysis, Diodes, Resistors, Circuit switching, Blue light emitting diodes

PROCEEDINGS ARTICLE | January 7, 2008

Strain analysis in pseudomorphically grown GaN-based multiple epitaxial layers

Proc. SPIE. 6824, Semiconductor Lasers and Applications III

KEYWORDS: Multilayers, Polarization, Crystals, Semiconductor lasers, Gallium nitride, Aluminum, Indium gallium nitride, Semiconducting wafers, Gallium, Strain analysis

PROCEEDINGS ARTICLE | October 6, 2006

Waveguide structural effect on ripples of far-field pattern in 405-nm GaN-based laser diodes

Proc. SPIE. 6352, Optoelectronic Materials and Devices

KEYWORDS: Refractive index, Waveguides, Cladding, Semiconductor lasers, Gallium nitride, Aluminum, Waveguide modes, Active optics, Gallium, Near field optics

PROCEEDINGS ARTICLE | October 5, 2006

Highly integrated 10Gb/s optical sub-assembly and its circuit modeling

Proc. SPIE. 6352, Optoelectronic Materials and Devices

KEYWORDS: Transceivers, Transmitters, Waveguides, Semiconductor lasers, Capacitance, Aluminum nitride, Integrated optics, Resistors, Circuit switching, Lead

PROCEEDINGS ARTICLE | December 8, 2003

Nonlinear behavior of traveling-wave electroabsorption modulators

Proc. SPIE. 5248, Semiconductor Optoelectronic Devices for Lightwave Communication

KEYWORDS: Quantum wells, Modulators, Optoelectronic devices, Nonlinear optics, Analog electronics, Semiconductor optoelectronics, Absorption

Showing 5 of 19 publications

Conference Committee Involvement (10)

Gallium Nitride Materials and Devices XIV

4 February 2019 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIII

29 January 2018 | San Francisco, California, United States

Gallium Nitride Materials and Devices XII

30 January 2017 | San Francisco, California, United States

Gallium Nitride Materials and Devices XI

15 February 2016 | San Francisco, California, United States

Gallium Nitride Materials and Devices X

9 February 2015 | San Francisco, California, United States

Showing 5 of 10 published special sections

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