In this paper, we present thin-film photodetector (TFPD) image sensors for the short-wave infrared (SWIR) range. Monolithic integration of quantum dot (QD) absorbers enables quantum efficiency of 70% at 1400 nm and pixel pitch below 2 μm. We present image sensors on custom CMOS readout fabricated using 130 nm node. We review latest advancements on the photodiode stack and the pixel engine, including the thin-film pinned photodiode architecture. Furthermore, we study the manufacturing flows to realize full wafer capability for volume processing. QD image sensors are paving the way to add augmented vision into future XR systems with extra functionalities.
We present a near-infrared (NIR) imager based on high-performance organic photodiode in terms of dark current, specific detectivity and response time. A carefully designed interfacial layer is introduced in the thin-film organic photodiode stack to reduce trap assisted carrier emission leading to sub-nA/cm2 dark current and external quantum efficiency above 50% in the NIR range. The developed imager chip benefits from this improved dark current-voltage characteristic (high light signal to dark noise ratio) and enables high-resolution, monolithic NIR image sensors.
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