CONFERENCE PROCEEDINGS
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Dr. Joong Kon Son
at SAMSUNG Electro-Mechanics
SPIE Involvement:
Author
Publications (4)
Proceedings Article | 8 February 2007 Paper
Recent achievements of AlInGaN based laser diodes in blue and green wavelength
T. Jang, O. H. Nam, K. Ha, S. Lee, J. Son, H. Ryu, K. Kim, H. Paek, Y. Sung, H. Kim, S. Chae, Y. Kim, Y. Park
Proceedings Volume 6473, 64730X (2007) https://doi.org/10.1117/12.702998
KEYWORDS: Quantum wells, Gallium nitride, Continuous wave operation, Indium gallium nitride, Semiconductor lasers, Annealing, Diodes, Quantum efficiency, Transmission electron microscopy, Projection systems
Proceedings Article | 6 October 2006 Paper
Recent progress of high-power InGaN blue-violet laser diodes
H. Ryu, K. Ha, S. Lee, K. Choi, T. Jang, J. Son, H. Kim, J. Chae, H. Paek, Y. Sung, T. Sakong, K. Kim, O. Nam, Y. Park
Proceedings Volume 6352, 63521I (2006) https://doi.org/10.1117/12.691128
KEYWORDS: Quantum wells, Indium gallium nitride, Aluminum, Temperature metrology, Gallium nitride, Semiconductor lasers, Superlattices, Near field optics, Continuous wave operation
Proceedings Article | 3 March 2006 Paper
Increase of output power and lifetime by improving the heat dissipation of GaN-based laser diodes
Jung-Hye Chae, Han-Youl Ryu, Kyu-Sang Kim, Kyoung-Ho Ha, Suhee Chae, Hyungkun Kim, Sung-Nam Lee, Kwang-Ki Choi, Taehoon Jang, Joong-Kon Son, Ho-Sun Baek, Youn-Joon Sung, Sakong Tan, Younhee Kim, Ok-Hyun Nam, Yong-Jo Park
Proceedings Volume 6121, 61210Y (2006) https://doi.org/10.1117/12.647332
KEYWORDS: Semiconductor lasers, Sapphire, Temperature metrology, Light sources, Indium gallium nitride, Waveguide lasers, Waveguides, Metalorganic chemical vapor deposition, Gallium nitride, Aluminum nitride
Proceedings Article | 22 February 2006 Paper
High power AlInGaN-based blue-violet laser diodes
O. H. Nam, K. H. Ha, H. Y. Ryu, S. N. Lee, T. H. Chang, K. K. Choi, J. K. Son, J. H. Chae, S. H. Chae, H. S. Paek, Y. J. Sung, T. Sakong, H. G. Kim, H. S. Kim, Y. H. Kim, Y. J. Park
Proceedings Volume 6133, 61330N (2006) https://doi.org/10.1117/12.645579
KEYWORDS: Aluminum, Semiconductor lasers, Electron beam lithography, Near field optics, Gallium nitride, Superlattices, Near field, Magnesium, High power lasers, Gallium
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