As the design rules of semiconductor devices continue to decrease, the detection of critical killer defects has become more difficult. In this paper, μ-bridge defects are studied. In order to detect special μ-bridges, both direct inspection and simulation techniques were employed. The inspection technologies used include brightfield, darkfield, and electron-beam inspection (EBI) tools, while the simulation analysis uses charge calculations and Monte Carlo scattering simulation. Special μ-bridge defects were only captured by the EBI tool and verified by focused ion beam (FIB) milling. This result corresponds to simulation data.