Dr. Jose M. Pozo Profile

Dr. Jose M. Pozo

Director of Technology at

SPIE Involvement:

Conference Program Committee | Author

Publications (8)

PROCEEDINGS ARTICLE | March 8, 2014

Sensing platform based on micro-ring resonator and on-chip reference sensors in SOI

Proc. SPIE. 8990, Silicon Photonics IX

KEYWORDS: Resonators, Silica, Interferometers, Sensors, Etching, Water, Coating, Free space optics, Environmental sensing, Temperature metrology

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PROCEEDINGS ARTICLE | May 22, 2013

ePIXfab: the silicon photonics platform

Proc. SPIE. 8767, Integrated Photonics: Materials, Devices, and Applications II

KEYWORDS: Packaging, Microsystems, Etching, Photonics, Silicon photonics, Computer aided design, Semiconducting wafers, Prototyping, Device simulation, Standards development

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PROCEEDINGS ARTICLE | June 5, 2010

Four-input NOR gate using cross gain modulation in a single Semiconductor Optical Amplifier

Proc. SPIE. 7728, Nonlinear Optics and Applications IV

KEYWORDS: Optical filters, Eye, Logic, Optical amplifiers, Semiconductor optical amplifiers, Clocks, Modulation, Wavelength division multiplexing, Nonlinear optics, Logic devices

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PROCEEDINGS ARTICLE | April 28, 2010

Fast integrated discretely tunable laser using filtered feedback for packet switching and access network applications

Proc. SPIE. 7720, Semiconductor Lasers and Laser Dynamics IV

KEYWORDS: Optical filters, Mirrors, Tunable lasers, Switches, Switching, Networks, Control systems, Laser resonators, Tunable filters, Packet switching

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PROCEEDINGS ARTICLE | May 8, 2008

Fabrication and characterization of GaInNAs/GaAs semiconductor optical amplifiers

Proc. SPIE. 6997, Semiconductor Lasers and Laser Dynamics III

KEYWORDS: Tunable lasers, Quantum wells, Semiconductor optical amplifiers, Coarse wavelength division multiplexing, Etching, Semiconductor lasers, Ion beams, Iodine, Photonic integrated circuits, Temperature metrology

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PROCEEDINGS ARTICLE | April 14, 2006

Improvements in GaInNAs/GaAs quantum-well lasers using focused ion beam post-processing

Proc. SPIE. 6184, Semiconductor Lasers and Laser Dynamics II

KEYWORDS: Optical design, Quantum wells, Modulation, Waveguides, Metals, Laser processing, Semiconductor lasers, Ion beams, Waveguide lasers, Temperature metrology

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PROCEEDINGS ARTICLE | July 7, 2005

Investigation on the high speed modulation in (GaIn)(NAs)/GaAs lasers

Proc. SPIE. 5840, Photonic Materials, Devices, and Applications

KEYWORDS: Refractive index, Eye, Fabry–Perot interferometers, Quantum wells, Modulation, Gallium arsenide, Nitrogen, Semiconductor lasers, Laser damage threshold, Temperature metrology

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PROCEEDINGS ARTICLE | September 1, 2004

Investigation of optical gain and L-I characteristics in (GaIn)(NAs)/GaAs lasers

Proc. SPIE. 5452, Semiconductor Lasers and Laser Dynamics

KEYWORDS: Indium gallium arsenide, Quantum wells, Nitrogen, Laser marking, Semiconductor lasers, Telecommunications, Vertical cavity surface emitting lasers, Laser optics, Pulsed laser operation, Temperature metrology

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GaInNAs quantum well lasers have attracted significant interest in recent years. Their potential for operation at high temperatures without coolers and their application for low cost vertical-cavity surface-emitting lasers (VCSELs) are the main reasons for this interest. The main consequence of adding Nitrogen (N) to InGaAs materials is the band gap shrinkage. The reason for that is the interaction of N (acting as a localized defect) with the conduction band of the InGaAs. In previous studies, low temperature PL measurements of the impact of Nitrogen on the band structure of GaIn NAs have been examined. Pulsed measurements using a broad area GaInNAs QW laser were carried out and the results were analyzed in terms of the interaction of the N defect state with the GaInAs conduction band edge (band-anticrossing model). A detailed experimental temperature study of single quantum-well GaInNAs lasers at room temperature and above has been carried out. Experimental results of L-I, T₀, temperature dependence of lasing wavelength, optical gain and efficiencies are presented, discussed and compared with other materials. The temperature ranges studied is appropriate for most network applications. The gain spectra for moderate densities were experimentally measured using the method of Hakki and Paoli: the 600 μm long devise is biased below threshold and the gain is evaluated form the Fabry Perot modulation of the spontaneous emission spectra. A new concept will be introduced to study the bandwidth of the spectral gain and see its dependence with the temperature. The half-peak-BW will be the bandwidth where the gain decreases 50% from the peak gain. The temperature performance of the half-peak-BW has been studied obtaining a slope of 0.5871 nm/K. About the temperature dependence of the laser, a value of T_o (50 K) similar than the one found in InGaAsP has been found. This might disagree with the first results published of this new material system, giving extremely high values above 100 K. This is due to the high A parameter found in the previous materials. The improvement of the material is decreasing the A parameter and the characteristic temperature of the device. A small temperature dependence of the lasing wavelength was found (0.37 nm/K). This value was confirmed measuring the temperature dependence of the gain peak wavelength. This small temperature dependence can be understood by the interaction of the N state with the conduction band edge.

Showing 5 of 8 publications

Conference Committee Involvement (2)

Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS, Nanodevices, and Nanomaterials XIII

3 February 2014 | San Francisco, California, United States

Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS and Nanodevices XII

4 February 2013 | San Francisco, California, United States

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