The trace of the gate noise voltage was successfully caught by the measurements of the correlation between the noise outputs of a pair of JFETs connected to a common gate resistor. It is shown for 2SK150 (n-channel junction FET) that the gate noise voltage is 1/f-type and its level is -142dbV2/Hz at 1Hz, and that the correlation coefficient between the gate noise voltage and the gate noise current is -1.
In the present paper, emphasis is laid on those RTS showing a capture process, which deviates from the standard Shockley-Read-Hall kinetics. A modified two-step approach is proposed. In this case the charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states. The measurable quantity is the current modulation, which has discrete states, too. The current modulation is then represented by a secondary process Y(t). The proposed model can explain some of the complex switching phenomena being measured in nanoscale devices. The quadratic dependence of the capture rate on the current and the noise spectral density dependence on the current and temperature are analysed. It is shown that the occupation time probability density for emission is given by a superposition of two exponential dependencies, whereas the capture time constant distribution is purely exponential.