Dr. Joseph G. Pellegrino Profile

Dr. Joseph G. Pellegrino

Deputy Director/Ground Combat Systems Div at US Army RDECOM CERDEC NVESD

SPIE Involvement:

Author

Proceedings Article | 31 May 2012 Paper

HOT MWIR HgCdTe performance on CZT and alternative substrates

Joseph Pellegrino, Roger DeWames, Philip Perconti, Curtis Billman, Patrick Maloney

Proceedings Volume 8353, 83532X (2012) https://doi.org/10.1117/12.923836

KEYWORDS: Mid-IR, Mercury cadmium telluride, Staring arrays, Sensors, Diffusion, Infrared sensors, Gallium arsenide, Temperature metrology, Sensor technology, Data modeling

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Proceedings Article | 31 May 2012 Paper

Electrical characteristics of MOVPE grown MWIR N+p(As)HgCdTe heterostructure photodiodes build on GaAs substrates

Roger DeWames, Joseph Pellegrino

Proceedings Volume 8353, 83532P (2012) https://doi.org/10.1117/12.921093

KEYWORDS: Photodiodes, Diffusion, Gallium arsenide, Temperature metrology, Staring arrays, Mercury cadmium telluride, Data modeling, Mid-IR, Defense and security, Sensors

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SPIE Journal Paper | 1 June 2011

Doping dependence of minority carrier lifetime in long-wave Sb-based type II superlattice infrared detector materials

Sumith Bandara, Patrick Maloney, Neil Baril, Joseph Pellegrino, Meimei Tidrow

OE, Vol. 50, Issue 06, 061015, (June 2011) https://doi.org/10.1117/12.10.1117/1.3590720

KEYWORDS: Doping, Long wavelength infrared, Sensors, Superlattices, Diffusion, Photodiodes, Heterojunctions, Infrared detectors, Mercury cadmium telluride, Quantum efficiency

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Proceedings Article | 21 May 2011 Paper

Electro-optical characteristics of a MWIR and LWIR planar hetero-structure P+n HgCdTe photodiodes limited by intrinsic carrier recombination processes

R. DeWames, P. Maloney, C. Billman, J. Pellegrino

Proceedings Volume 8012, 801239 (2011) https://doi.org/10.1117/12.883757

KEYWORDS: Photodiodes, Long wavelength infrared, Mid-IR, Diffusion, Mercury cadmium telluride, Temperature metrology, Diodes, Sensors, Staring arrays, Electro optics

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Reported is a detailed analysis of the dark current versus voltage versus temperature data of planar hetero-structure P⁺n mid wavelength infrared MWIR photodiodes with band gap energy E_g(78K) = 0.243 eV, λ_g= 5.1 μm and long wavelength infrared LWIR photodiodes with E_g(78K) = 0.115 eV, λ_g= 10.8 μm. The purpose of the investigations is to identify the dominant carrier recombination mechanisms and in particular to determine at what temperature and voltage is the onset of Shockley Read Hall (SRH) space charge currents. The important finding is that the currents can mostly be explained by a combination of Auger (e-e) and radiative carrier recombination processes with no evidence of SRH recombination through near mid-gap states; a lower bound estimate of the SRH lifetime for LWIR photodiode is 100 μs. Intrinsic radiative recombination is found to be the dominant carrier recombination mechanisms for the MWIR photodiode with a carrier concentration N_d=10¹⁵ cm^-3, and Auger (e-e) being dominant for the LWIR photodiode. The LWIR Auger (e-e) lifetime data is well fitted with the Beattie, Landsberg and Blakemore (BLB) formulas with a constant overlap integral F1F2= 0.15, which is in accord with recent electronic band structure calculations. From the analysis of variable area LWIR photodiodes the minority carrier conductivity mobility and diffusion length at 80K are calculated to be 350 cm²/V-s and 23 μm respectively. The LWIR lifetime measured by the photoconductive decay method is in agreement with the expected intrinsic Auger (e-e) lifetime ≈ 2 μs at 80K and with the lifetimes obtained from device analysis. For T ≤ 40K, trap assisted tunneling is the dominant current in reversed bias LWIR photodiodes; forward bias currents are dominated by diffusion currents of origin in the n- layer. For the MWIR photodiode deviation from diffusion limited behavior to G-R is observed at T < 80K and, the SRH lifetimes ιn0 and ιp0 are estimated to be 50 ms. Measured and calculated external quantum efficiencies at the peak responsivity wavelength λpk for both MWIR and LWIR photodiodes are ≈ 70% at 78K. For imaging in the 3-5 μm spectral band scene temperature 300K, F/3 optics, the noise equivalent temperature difference NE▵T of MWIR photodiodes is calculated to be near background limited performance BLIP =12.4 mK for detector temperatures Td ≤ 150K.

Proceedings Article | 7 May 2009 Paper

Minority carrier lifetime characteristics in type II InAs/GaSb LWIR superlattice n+πp+ photodiodes

J. Pellegrino, R. DeWames

Proceedings Volume 7298, 72981U (2009) https://doi.org/10.1117/12.819641

KEYWORDS: Photodiodes, Diffusion, Long wavelength infrared, Sensors, Mercury cadmium telluride, Superlattices, Quantum efficiency, Data conversion, Solids, Temperature metrology

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Proceedings Article | 2 October 2006 Paper

InGaAs/InAlAs multi-quantum well light modulator and detector

P. Maloney, F. Koch, K. Alavi, J. Pellegrino, T. Hongsmatip, D. Carothers, M. Winn

Proceedings Volume 6389, 63890V (2006) https://doi.org/10.1117/12.684686

KEYWORDS: Modulation, Modulators, Absorption, Measurement devices, Quantum efficiency, Sensors, Amplifiers, Objectives, Monochromators, Excitons

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Proceedings Article | 26 May 1994 Paper

Correlation of optical, x-ray, and electron microscopy measurements on semiconductor multilayer structures

David Christensen, Robert Hickernell, David Schaafsma, Joseph Pellegrino, Mark McCollum, James Hill, R. Rai

Proceedings Volume 2141, (1994) https://doi.org/10.1117/12.176851

KEYWORDS: Quantum wells, Reflectivity, Mirrors, Reflectors, X-rays, Vertical cavity surface emitting lasers, Reflectance spectroscopy, Remote sensing, X-ray optics, Refractive index

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Proceedings Article | 16 June 1993 Paper

Vertical-cavity semiconductor lasers: structural characterization, CAD, and DFB structures

David Christensen, Craig Parsons, Joseph Pellegrino, James Hill, R. Rai, S. Crochiere, Robert Hickernell, David Schaafsma

Proceedings Volume 1850, (1993) https://doi.org/10.1117/12.146898

KEYWORDS: Vertical cavity surface emitting lasers, Mirrors, Quantum wells, Semiconductor lasers, Reflectors, Luminescence, Reflectivity, Semiconducting wafers, Crystals, Computer aided design

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Showing 5 of 8 publications

Conference Committee Involvement (19)

Infrared Technology and Applications XLIX

30 April 2023 | Orlando, Florida, United States

Infrared Technology and Applications XLVIII

3 April 2022 | Orlando, Florida, United States

Infrared Technology and Applications XLVII

12 April 2021 | Online Only, Florida, United States

Infrared Technology and Applications XLVI

27 April 2020 | Online Only, California, United States

Infrared Technology and Applications XLV

14 April 2019 | Baltimore, MD, United States

Infrared Technology and Applications XLII

18 April 2016 | Baltimore, MD, United States

Infrared Technology and Applications XLI

20 April 2015 | Baltimore, MD, United States

Infrared Technology and Applications XL

5 May 2014 | Baltimore, MD, United States

Quantum Sensing and Nanophotonic Devices XI

2 February 2014 | San Francisco, California, United States

Infrared Technology and Applications XXXIX

29 April 2013 | Baltimore, Maryland, United States

Quantum Sensing and Nanophotonic Devices X

3 February 2013 | San Francisco, California, United States

Infrared Technology and Applications XXXVIII

23 April 2012 | Baltimore, Maryland, United States

Quantum Sensing and Nanophotonic Devices IX

22 January 2012 | San Francisco, California, United States

Infrared Technology and Applications XXXVII

25 April 2011 | Orlando, Florida, United States

Infrared Technology and Applications XXXVI

5 April 2010 | Orlando, Florida, United States

Quantum Sensing and Nanophotonic Devices VII

24 January 2010 | San Francisco, California, United States

Infrared Technology and Applications XXXV

13 April 2009 | Orlando, Florida, United States

Quantum Sensing and Nanophotonic Devices VI

25 January 2009 | San Jose, California, United States

Quantum Sensing and Nanophotonic Devices IV

22 January 2007 | San Jose, California, United States

Showing 5 of 19 Conference Committees

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