Silicon photonics (SiPh) has emerged as the predominant platform across a wide range of integrated photonics applications, encompassing not only mainstream fields such as optical communications and microwave signal processing but also burgeoning areas such as artificial intelligence and quantum processing. A vital component in most SiPh applications is the optical phase shifter, which is essential for varying the phase of light with minimal optical loss. Historically, SiPh phase shifters have primarily utilized the thermo-optic coefficient of silicon for their operation. Thermo-optic phase shifters (TOPSs) offer significant advantages, including excellent compatibility with complementary metal–oxide–semiconductor technology and the potential for negligible optical loss, making them highly scalable. However, the inherent heating mechanism of TOPSs renders them power-hungry and slow, which is a drawback for many applications. We thoroughly examine the principal configurations and optimization strategies that have been proposed for achieving energy-efficient and fast TOPSs. Furthermore, we compare TOPSs with other electro-optic mechanisms and technologies poised to revolutionize phase shifter development on the SiPh platform.
The interest in the development of silicon photonic integrated devices is rapidly expanding from the telecom/datacom sector to new emerging application domains such as artificial intelligence or quantum photonics. Silicon benefits from CMOS-compatible fabrication processes and a high index contrast. However, the implementation of new functionalities or the achievement of a superior performance necessarily requires the integration of new materials in current silicon photonics platforms. In this context, phase change materials have been established as promising material technologies for optical switching. In this work, the benefits and challenges for enabling optical switching with VO2/Si and GST/Si devices will be analyzed and discussed.
Reconfigurable photonics enable the realization of diverse functionalities using a single photonic device. Such devices could play a prominent role in a large variety of applications, including neuromorphic computing, telecommunications, data communication networks, or optical sensing. The silicon photonics platform is the ideal candidate to implement those devices due to its unique capability for handling large scalability and mass-manufacturing at low cost. However, switching and modulation functionalities offered by current silicon platforms are based on the plasma dispersion effect or the thermo-optic effect, which yields devices with large footprints or reduced bandwidth, preventing scalability. Therefore, combining silicon photonics with materials with unique optoelectronic properties is emerging as the most promising path towards developing ultra-compact devices with competitive performance. In this context, new functionalities not yet offered by current silicon platforms may be implemented by the integration of phase change materials (PCMs) and transparent conducting oxides (TCOs) in silicon structures. Hybrid PCM/Si and TCO/Si devices will be presented for implementing weighting operation, reconfigurable activation functions, and optical storage, which are crucial functionalities in artificial neural networks and the emerging field of neuromorphic computing.
KEYWORDS: Perovskite, Nanocrystals, Excitons, Optical properties, Nanophotonics, Polymethylmethacrylate, Metals, Bromine, Temperature metrology, Near field optics
Metal halide perovskites in the form of nanocrystals are highly efficient light emitters at visible-NIR wavelengths. In this work, the optical properties of single nanocrystals and ensembles will be discussed, as also several applications in nanophotonics. At low temperatures, single nanocrystals can be also single photon emitters if blinking and spectral diffusion is conveniently reduced. In the case of nanocrystal assemblies, stimulated emission can be observed with thresholds lower than 10 μJ/cm2 under nanosecond laser excitation at low temperatures, whose physical origin is attributed to single exciton recombination. Finally, the coupling of perovskite nanocrystals to the optical modes of hyperbolic metaldielectric metamaterials has been studied and demonstrated an important Purcell enhancement of the exciton radiative emission by more than a factor three for CsPbI3 and around factor two for FAPbI3 when the distance between the emitters and HMM is 10 nm.
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