Dr. Julia Simon Profile

Dr. Julia Simon

at Commissariat à l'Energie Atomique

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Publications (7)

Proceedings Article | 13 March 2024 Presentation

Parallel communication with InGaN/GaN micro-LEDs using a CMOS compatible approach

Anthony Cibié, Sultan El Badaoui, Patrick Le Maitre, Julia Simon, Fabian Rol, Bastien Miralles, Clément Ballot, Bernard Aventurier, Paolo De Martino

Proceedings Volume PC12906, PC129060H (2024) https://doi.org/10.1117/12.3002681

KEYWORDS: Visible light communication, Wafer bonding, Photodetectors, Semiconducting wafers, Eye, Silicon, Semiconductor lasers, Optical transmission, Optical communications, Modulation

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Proceedings Article | 27 March 2023 Poster

Monolithic integration of small pitch hybrid LED-OLED bicolor array on 8” Si for pure color applications

Paolo De Martino, Bernard Aventurier, Patrick Le Maitre, Christelle Laugier, Basien Miralles, Clement Ballot, Benoit Racine, Julia Simon

Proceedings Volume PC12441, PC124410X (2023) https://doi.org/10.1117/12.2650222

KEYWORDS: Light emitting diodes, Organic light emitting diodes, Silicon, RGB color model, LED displays, Gallium nitride, Optical communications, Molecules, Image acquisition, Epitaxy

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Proceedings Article | 1 April 2009 Paper

Materials for single-etch double patterning process: surface curing agent and thermal cure resist

Young Bae, Yi Liu, Thomas Cardolaccia, John McDermott, Peter Trefonas, Ken Spizuoco, Michael Reilly, Amandine Pikon, Lori Joesten, Gary Zhang, George Barclay, Julia Simon, Stéphanie Gaurigan

Proceedings Volume 7273, 727306 (2009) https://doi.org/10.1117/12.814274

KEYWORDS: Double patterning technology, Photoresist processing, Image processing, Semiconducting wafers, Lithography, Photoresist materials, Cadmium, Metrology, Electron beam lithography, Coating

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Proceedings Article | 4 April 2007 Paper

An analysis of EUV-resist outgassing measurements

Kim Dean, Iwao Nishiyama, Hiroaki Oizumi, Anthony Keen, Heidi Cao, Wang Yueh, Takeo Watanabe, Paolo Lacovig, Luca Rumiz, Gregory Denbeaux, Julia Simon

Proceedings Volume 6519, 65191P (2007) https://doi.org/10.1117/12.712379

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Synchrotrons, Contamination, Mass spectrometry, Molecules, Mirrors, Analytical research, Calibration, EUV optics

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Proceedings Article | 29 March 2006 Paper

Overcoming pattern collapse on e-beam and EUV lithography

A. Jouve, J. Simon, A. Pikon, H. Solak, C. Vannuffel, J.-H. Tortai

Proceedings Volume 6153, 61531C (2006) https://doi.org/10.1117/12.656400

KEYWORDS: Electron beam lithography, Capillaries, Liquids, Adhesives, Extreme ultraviolet lithography, Interfaces, Lithography, Polymers, Chemically amplified resists, Extreme ultraviolet

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Proceedings Article | 4 May 2005 Paper

Overcoming pattern collapse of ultra high resolution dense lines obtained with EUV resists

A. Jouve, J. Simon, J. Foucher, T. David, J.-H. Tortai, Harun Solak

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.598763

KEYWORDS: Electron beam lithography, Lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Line width roughness, Photoresist processing, Liquids, Thin films, Line edge roughness, Etching

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Future lithography tools will have to address the 32 nm node. EUV lithography at 13.4 nm wavelength is the technology that may achieve such resolution if chemically amplified EUV resists show high enough resolution capabilities. However for sub 100 nm line width patterns, the pattern collapse, generated during the drying step of the developing process, becomes a serious limiting phenomenon. We performed ultra high resolution exposures of EUV positive chemically amplified resists using either electron beam lithography (EBL), or EUV interferometry Lithography (IL) produced in a synchrotron. Two theoretical models have been compared with experimental results. One is mainly dealing with adhesion failure and the other with the line deformation. Adhesion failure occurs when capillarity pressure on the pattern become stronger than the attractive Van der Walls forces assuring the pattern adhesion on the substrate. Mechanical failure occurs once the lines deflection exceeds the mechanical breaking resistance of the resist. We highlighted that pattern collapse mode depends on resist thickness. Collapsing of patterns with thickness>100 nm are properly fitted with the deformation model of the resist; whereas for pattern height under 60 nm, experimental results obtained by EUVIL and EBL are properly predicted with the adhesion failure model. To push resolution further and avoid pattern collapse, we targeted to expose sub 100 nm thick resist films. AFM3D measurements on EBL patterns show that reducing the resist thickness increases their top Line Width Roughness (LWR) testifying of physical resist properties variations in the resist interfacial layers. However we pointed out an optimum resist thickness, hence an optimal dilution. By tuning developer normality and puddle time, straight resist profiles were obtained. Finally we reached dense 40/40 nm lines in XP9947W150 resist using both exposure tools and validate the process compatibility with future etching steps by transferring 40/40 nm dense lines patterned with EBL into a metallic hard mask.

Proceedings Article | 12 June 2003 Paper

Monitoring of photo-resist poisoning

Julia Simon, Francois Weisbuch, Yves Quere, Olivier Louveau, Christine Bourlot

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485091

KEYWORDS: Semiconducting wafers, Reflectivity, Photomasks, Dielectrics, Lithography, Plasma, Chemistry, Silicon carbide, 193nm lithography, Silicon

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Showing 5 of 7 publications

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