Mr. Jun Chun Profile

Jun Chun

at Hynix Semiconductor Inc

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 1 November 2007 Paper

Self-aligned resist patterning with 172nm and 193nm backside flood exposure on attenuated phase shift masks

Jun Chun, Taejoong Ha, Hoyong Jung, Sangjin Jo, Oscar Han

Proceedings Volume 6730, 673044 (2007) https://doi.org/10.1117/12.746638

KEYWORDS: Light sources, Quartz, Floods, Optical lithography, Phase shifts, Photoresist processing, Photomasks, Chromium, Transmittance, Optical properties

Read Abstract +

We have investigated self-aligned resist patterning for a patterning accuracy of photo mask. Self-aligned resist pattern can be formed by backside flood exposure on photo-mask. It had been already proved by the experiments with 248 nm light source exposure on binary (Cr on Quartz) and KrF attenuated phase shift masks. Attenuated phase shift masks are generally composed of Cr/MoSiN/Quartz, MoSiN/Quartz, and Quartz layers. MoSiN layers of attenuated phase shift mask have the optical property of 6% transmittance at 248 nm light source, and the interference of the 6%- transmitted light makes the undesirable resist pattern profile on MoSiN-Quartz boundary. This paper shows the fresh possibility of the self-aligned resist pattern fabrication on attenuated phase shift masks using backside flood exposure. To solve the optical property of MoSiN layer, self-aligned resist patterns of KrF attenuated phase shift mask was fabricated using 193 nm wavelength backside flood exposure and ArF attenuated phase shift mask used 172 nm wavelength. The shorter wavelength than generally applied wavelength could minimize transmittance on MoSiN area. Besides we used Negative PR to make the self-aligned resist pattern on exposed regions. These experimental concepts help to form the selective PR patterning on only quartz regions of attenuated phase shift mask.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years