Sb<sub>2</sub>Te<sub>3</sub> film was deposited on glass substrates which were heated at180°C by pulsed laser deposition (PLD) process using Sb<sub>2</sub>Te<sub>3</sub> target. The crystal structure and crystallization behavior of Sb<sub>2</sub>Te<sub>3</sub> film was determined by X-ray diffraction (XRD) and Raman spectra, respectively. The surface morphology of the film was measured by atomic force microscope (AFM). The results suggest that the crystalline of Sb<sub>2</sub>Te<sub>3</sub> thin film was crystallized well when the substrate temperature (T<sub>sub</sub>) was 180°C, which indicated that Sb<sub>2</sub>Te<sub>3</sub> thin film can be fabricated by PLD at suitable temperature.
Ternary CuInSe<sub>2</sub> (CIS) thin films were deposited on glass substrates using a binary CuIn alloy target and an elemental Cu target by employing radio-frequency (RF) magnetron sputtering process and post-selenization process. The selenization procedure is carried out within a partially close-spaced graphite box. The Cu content in CIS thin films can be controlled by different sputtering time of Cu target. The result of energy dispersive X-ray spectroscopy (EDX) indicated that the CIS thin film prepared by single CuIn alloys target had significantly composition deviation. Combined with the X-ray diffraction (XRD) and Raman spectra results showed that all CIS thin films have chalcopyrite structure. Further transmission spectra demonstrated that the optical band gap of CIS thin film is about 1.0 eV.