The CuInGa(CIG) precursor films were grown by ion beam sputtering continuously CuGa/CuIn and CuIn/CuGa, and then selenized CIG to fabricate CIGS absorber films on molybdenum substrates . They were annealed in the same vacuum chamber and under the same temperature (500°C). The CIGS thin films were characterized with X-ray diffraction (XRD), Energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM) in order to study the microstructures, composition, surface morphology, electrical properties, respectively. The results showed that the CIGS thin films appeared smooth and compact with a sequence of Mo/CuGa/CuIn/Se, which were mainly of chalcopyrite structure. The CIGS thin films got the strongest diffraction peak intensity and were with good crystalline quality.