GaN p-i-n ultraviolet photodetector for i-line lithography machines were fabricated. GaN detectors are excellent choice to monitor the uniformity and change degree of the beam energy for their high sensitivity, low noise and strong radiation resistance. The detector had four pairs of pixels distributed like four-quadrant and one pair in the center. Each pair is combined with one unfold pixel and the other is completely shaded, which is intend for the differential measurement circuit to improve the signal-to-noise ratio. A detection grating made by mask were directly mount on the surface of detectors. The UV detector had a current responsivity over 0.06A/W at 365nm and no response at longer than 400 nm. Under dark conditions, a low leakage current density of below 1.0×10-9A/cm2 was achieved at reverse bias of 0.3 V. The detector responsibility linearity was measured. The detection energy resolution can reach 0.16µW/cm2. The detectors were used for the light intensity calibration in optical proximity correction (OPC) to reduce the Rayleigh criterion k-factor. The combination of detectors and grating improved the measurement speed and edge measurement accuracy by using array slits detection (the grating of mask) and surface scanning method in focusing and leveling measurement system.
Source Optimization (SO), as a key technology of Resolution Enhancement Technologies (RETs), is employed to improve the performance of lithographic imaging in the advanced node. It is critical to guarantee the superior convergence ability of the pixelated SO method with the optimization algorithm. In this paper, a hybrid Genetic Algorithm (GA) is proposed as the method of optimizing the intensity distribution of the lithographic source according to the different mask pattern. Although the obvious performance of quick convergence and global search can be well represented in GA, keeping the local optimum in the optimization process is easily caused due to the complexity mathematical model for lithographic imaging process. Tabu search algorithm is combined with GA to widen the search range and break away from the local optimum for approximately generating the global optimum results of lithographic source. The valid pixels in the pixelated source are utilized as the optimized variables, which are encoded as a 1-D matrix in the optimized model. For ensuring the continuous gray-level changes in the intensity distribution of lithographic source, the Gaussian filter method is employed to blur the source shape. The simulation results demonstrate that the proposed hybrid-GA have the superior convergence performance in optimizing the intensity distribution of the lithographic source for the different mask patterns.
Maskless photolithography was proposed to achieve the conventional and low-cost micro and nano fabrication, the pivotal of such technology was the application of digital micro-mirrors devices (DMD). Based on maskless photolithography, we designed a specific bifocal compound eyes (BCE) which made up of an array of two superimposed microlens. However, during our experiments, we found the existence of nonlinear relationships among gray levels, exposure intensity and development depths. To precise control the surface profiles, we did several tests and interpolations were used on the data we gathered. Finally, we ascertained the development depth of each grayscale, a gray mask was designed and filled to 1024*768 to fit the size of DMD.
White-light scanning interferometry plays an important role in precise profile metrology of microstructure. However, applying this approach may also be limited because of the optical reflection behavior of the surface. While there is a thin film on the surface, the reflection behavior of top and bottom of the thin-film will cause severer phase errors. Recently, the method by combining both reflectometry and white-light scanning interferometry is proposed to measure the film thickness and surface profile. This article firstly explains the principle of the proposed method and then verifies the feasibility of the thickness-measurement method for transparent film on a Silicon surface. Both of the algorithm and the experiment system have been optimized to measure the film thickness with high precision.
Dimensional metrology for micro structure plays an important role in addressing quality issues and observing the performance of micro-fabricated products. Different from the traditional white-light interferometry approach, the modulation-based method is expected to measure topography of micro structure by the obtained modulation of each interferometry image. Through seeking the maximum modulation of every pixel respectively in Z direction, the method could obtain the corresponding height of individual pixel and finally get topography of the structure. Owing to the characteristic of modulation, the proposed method which is not influenced by the change of background light intensity caused by instable light source and different reflection index of the structure could be widely applied with high stability. The paper both illustrates the principle of this novel method and conducts the experiment to verify the feasibility.
The spectrum-integral Talbot lithography (STIL) was introduced into the fabrication of one-dimensional micro gratings using the broad-band UV illumination in this paper. In the process of spectrum-integral Talbot lithography, the self-images and π-phase-shifted images generated by different wave lengths overlap and integrate collectively to enormously extend the continuous depth-of-focus area since a certain distance away from the mask. As a result, the route of STIL proves to be of great potential for periodic frequency-doubling in good contrast without any complex improvement and operation to the traditional proximity lithographic system of UV mask aligner.
As the primary facility for the manufacturing of integrated circuit(IC), and MEMS devices [1], the lithographic
equipment’s improvement is restricted by the projection objective which can decide the capacity of the image
transmission of the facility and make the facility be capable of reaching the higher precision or beyond. On the basis of
the function, increasing the numeric aperture is coupled with the raising of resolution of the projection objective. In this
paper, a design of a projection objective with high numeric aperture and large view field for I-line lithography is
proposed. Owning a dual-telecentric structure this optical system owns an angular magnification of -1.25, an effective
image field of 90×90mm and an image numeric aperture of 0.2. Two aspheric surfaces are adopted in this projection
objective to enhance the quality of imaging that will insure the field curvature lower than a half of the DOF, restrict the
distortion lower than±σ/5 and make the MTF approximate the diffraction limits.
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