Photomask feature size has decreased in accordance with constant downscaling of semiconductor device size with
generation changes in every 2-3 years, as in the ITRS Roadmap. However, since exposure wavelength has been unable to
keep its pace with decreasing feature size, resolution enhancement techniques have been used to bring the generation
changes in photomask technologies. A typical resolution enhancement technique of using sub-resolution assist features
(SRAF) requires patterning of small features and that increases difficulties in mask manufacturing. Under such
circumstances, we are presenting a study focusing on EB-resist development in the manufacturing process.
In this paper, we study and report development methods aiming to improve develop loading effect and resolution limit.