In this paper a review is presented of light emission from forward-biased silicon diodes. After a treatment of the carrier recombination physics governing in this indirect-bandgap material, the article describes important works in this field. Then, routes are proposed for further improvement of the internal quantum efficiency for light emission. A good choice of carrier injection level will limit the impact of both Shockley-Read-Hall recombination and Auger recombination. However, the structural design of the diode has a strong influence on the overall quantum efficiency, as both surface recombination must be dealt with, and contact recombination avoided. New attributes of CMOS such as embedded SiGe offer additional opportunities for silicon LED architectures and their application.
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