The quality of visual image in an autostereoscopic 3D display was found for case of multiple observer regions. This was
made in the projective coordinates for which the forward and backward transformation matrices were found. It was
demonstrated that the quality is kept along the nodal lines in all regions as well as between them. The distinctive
locations were found together with the exact values of the quality function in these points. This allows estimating the
behavior of the quality function for bigger number of views and image cells as well as across the longer and wider area.
As HgCdTe technology has been advanced, HgCdTe photodetectors is realized in many application areas. Carrier mobility is one of the most fundamental parameters affecting current-voltage characteristics of the devices. In the conventional simulations the empirical mobility model is used which lacks generality. Especially, the field dependent mobility is found to be wrong by comparing Monte Carlo results. The semi- empirical electron mobility model for the simulator is proposed in this paper. Low field mobility is calculated using the relaxation time approximation, which provides information on the dominant factors affecting the mobility. The ionized impurity model is modified based on Brooks-Herring model to consider the degeneracy effect and overlap integral. For field dependent mobility, a new formula is proposed to take into account features of the dominant scattering mechanism such as nonparabolic relation between energy and wave function at high field. Final formula is accomplished by introducing fitting parameters extracted from Monte Carlo simulation results. The new model retains more physical meaning than conventional model and fits well with experimental data.
In this paper we introduce a new HgCdTe 2-dimensional numerical simulator, HanYang university SEmiconductor DEvice Simulator (HYSEDES). The modified transport models are included to describe the inherent natures of HgCdTe such as the degeneracy,the nonparabolic conduction band, and the band offset at heterointerface. It also takes into account various generation-recombination mechanisms regarding tunneling phenomena. For the advanced devices employing multiple junction, all the material parameters are described as a function of the position. The simulations are performed for some devices such as photo-voltaic devices and two color detectors to prove the validity of the overall models in the simulator and its capability.