Low Level Light (LLL) night vision technology is extensively applied in national defense and civil application fields. The digitization of LLL imaging is trend of light detection technology in the future. The corresponding modulation transfer function (MTF) and total system MTF model were established, base on the structure composition and operation principle. Simulation was carried out to analyze the performance of the MTF modern. Results indicate that the MCPCMOS better contrast of object. When the spatial frequency increasing, the MTF of MCP-CMOS downing faster than that of GaAs LLL image intensifier. The GaAs image intensifier shows an better image restoration capability and higher limiting resolution. The model and simulation results can provide a theoretical guidance for the fabrication and application of high imaging quality MCP-CMOS.
The flawed surface of GaAs/GaAlAs heterointerface after wet etching by H<sub>2</sub>O<sub>2</sub> and NH<sub>4</sub>OH based etch ant was studied in this work. The results showed that the surface of GaAs/GaAlAs heterointerface had convex point, etching pits, pinhole, fog point, and friction scratches were investigated with a etch step measurement. And imprinting the main reasons for the formation of the etching surface defects of GaAs/GaAlAs are the poor quality of epitaxial materials, the contamination of materials surface, the unclear interface of oxidation and doping, the inhomogeneity of concentration and the operation errors. The selective etching of the GaAs/GaAlAs material eliminates some flaws and improves the quality of the etching surface of the GaAs/GaAlAs material.