Cu<sub>2</sub>S thin films have been deposited on CdS/ITO (In<sub>2</sub>O<sub>3</sub>:Sn) substrates with various substrate temperatures by DC magnetron sputtering method. The effects of substrate temperature on the crystallization behavior and morphology are studied. Chemical composition of the films is confirmed by energy dispersive X-ray (EDX) spectroscopy. X-ray diffraction (XRD) analysis of the films reveals they have polycrystalline chalcocite structure with (110) texture. Field emission scanning electron microscopy (FESEM) show the crystalline nature of the films at higher substrate temperature, which is in accordance with XRD measurements. Stoichiometric analysis exhibits element composition with Cu/S concentrations ratio equal to 2 approximately.
In this paper, the design and fabrication of a capacitive Frisch grid structure for CdZnTe (CZT) detector were
investigated. The aging tests were first used to investigate the degradation of the mechanical and electrical characteristics
of the CdZnTe detector based on the capacitive frisch grid structure. The effects of the degradation on the performance
of CdZnTe detectors were investigated by scanning acoustic microscopy (SAM) test, current-voltage test, and multichannel
pulse-height spectrum analysis. In particular, a passivation layer obtained by a two-step passivation processing,
combined with a Teflon tape, was used as an insulated layer of the capacitive Frisch grid detector, improving its stability
effectively at high voltages. However, further improvements in material and device fabrication (including insulated
layer) were required to realize the potential of CZT detectors with the capacitive Frisch grid structure.