ZnS thin films were prepared on HgCdTe substrates by thermal evaporation and megnetron sputtering deposition technique. The morphology, structure, composition, and optical properties of two kinds of ZnS thin films were studied by scanning electron microscope(SEM), X-ray diffraction(XRD), energy dispersive X-ray analysis(EDX) and fourier transform infrared(FTIR) spectrometer. Then the HgCdTe MIS devices using ZnS thin film as insulating layer were successfully fabricated. The C-V measurement of MIS devices was used to study electrical characteristics of the ZnS/HgCdTe interface. The experimental results show that, the ZnS thin films by thermal evaporation and megnetron sputtering both have good transmission characteristics in infrared waveband and close atomic ratios of Zn/S. The former one exhibits zincblende structure and a phenomenon of layer growth, but the latter one exhibits wurtzite structure and an obvious phenomenon of island growth. It is also found that, the former one has less fixed charge density than the latter one.
Thermal oxidation interfacial layer was inserted into the GaN-based material and Schottky contact
interface during the device preparation to increase the barrier height. Different thickness of thermal
oxidation interfacial layer was created by keeping the chips in the Rapid Thermal Processor (RTP) in
atmosphere ambient for different periods of time before evaporating transparent Schottky contact.
For GaN Schottky diodes, as the time kept in RTP increases, the diodes' zero-bias resistances
decrease and the dark current increase considerably, and the peak photoresponse and UV-visible
rejection factor of the responsivity of the diodes decrease abruptly. For Al<sub>0.45</sub>Ga<sub>0.55</sub>N Schottky diodes,
as the time increase, the diodes' zero-bias resistances and dark current increase slightly, while the
peak photoresponse and the UV/visible rejection factor of the responsivity of the diodes decrease a