This paper aims to investigate the effects of the temperature on the mode-locking capability of two section InAs/InP
quantum nanostructure (QN) passively mode locked lasers. Devices are made with multi-layers of self-assembled InAs
QN either grown on InP(100) (5 quantum dashes (QDashes) layers) or on InP (311)B (6 quantum dots (QDs) layers).
Using an analytical model, the mode-locking stability map is extracted for the two types of QN as a function of optical
absorption, cavity length, current density and temperature. We believe that this study is of first importance since it
reports for the first time a systematic investigation of the temperature-dependence on the mode-locking properties of
InAs/InP QN devices. Beside, a rigorous comparison between QDashes and QDs temperature dependence is proposed
through a proper analysis of the mode-locking stability maps. Experimental results also show that under some specific
conditions the mode-locking operation can be temperature independent.