Dr. Karsten Bubke Profile

Dr. Karsten Bubke

R&D Engineer at GlobalFoundries

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Author

Publications (25)

Proceedings Article | 14 October 2011 Paper

Printability and detection of backside defects on photomasks

Karsten Bubke, Christian Holfeld, Angeline Ho, Soon Yoeng Tan, Byoung Il Choi, Anna Tchikoulaeva, Martin Sczyrba, Guoxiang Ning, Andre Holfeld

Proceedings Volume 8166, 81664D (2011) https://doi.org/10.1117/12.899127

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Reticles, Particles, Photomasks, Inspection, Glasses, Defect detection, Manufacturing, Metals

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Reticles are contaminated during its lifetime and can catch particles as large as several tens of microns. Such defects on the backside of photomasks are usually considered as uncritical and thus do not receive much attention. Backside defects are out of focus by the mask thickness during wafer exposure and cannot be directly imaged on wafer. However, the shadow of the defects changes the local illumination of the mask patterns and may result in spatial variation of critical dimension (CD) on wafer depending on numerical aperture (NA) and pupil shape. There have been only a few investigations on printability of backside defects in the past, and no data are available for the most advanced technology nodes. Reticles are regularly inspected for particles on the glass side in the wafer fab but limits for acceptable defect size are based on estimations. Detection of non-acceptable particles causes exposed wafers being either delayed or reworked with impact on throughput and cost performance. It is therefore important to gain better understanding of critical sizes of backside defects and of appropriate detection capabilities. We have designed and manufactured a test mask with repeating patterns of 20nm, 28nm and 40nm technology node ranging from contact and line/space critical layers to non-critical implant layers. Programmed chrome defects of varying size are placed on the backside of the mask opposite to the repeating front side patterns in order to measure the spatial variation of transmission and wafer CD caused by the backside defects. The test mask was printed on a bare Silicon wafer and the size of printed features was measured by spatial sampling. Wafer CD variation for different backside defect sizes are demonstrated and compared for 28nm node first metal layer. Although the opaque chrome defects on the backside do not behave like real particles they aim on deriving a print threshold for backside particles based on actual wafer data. After such critical size of backside defects is obtained the reticle was also utilized to investigate the detection ability of backside defects by defect inspection of the reticle.

Proceedings Article | 2 April 2011 Paper

Use of scatterometry for scanner matching

Rolf Seltmann, Holger Bald, Karsten Bubke, Dieter Woischke, Paul Luehrmann, Matthias Ruhm, Marc Noot, Paul van Adrichem

Proceedings Volume 7985, 79850J (2011) https://doi.org/10.1117/12.886120

KEYWORDS: Scanners, Scatterometry, Scanning electron microscopy, Semiconducting wafers, Optical proximity correction, Time metrology, Metrology, High volume manufacturing, Cadmium sulfide, Cadmium

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Proceedings Article | 23 March 2011 Paper

Simulation-based scanner tuning using FlexRay capability and scatterometry

Rafael Aldana, Rolf Seltmann, Holger Bald, Justin Ghan, Paul van Adrichem, Paul Luehrmann, Karsten Bubke, Xu Xie, Stefan Roling, Martin Niehoff, Matthias Ruhm

Proceedings Volume 7973, 79732E (2011) https://doi.org/10.1117/12.890501

KEYWORDS: Data modeling, Scanners, Scatterometry, Scanning electron microscopy, Metrology, Critical dimension metrology, Semiconducting wafers, Printing, Imaging systems, Cadmium

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SPIE Journal Paper | 1 January 2011

Pellicle contribution to optical proximity and critical dimension uniformity for 1.35 numerical aperture immersion ArF lithography

Lieve Van Look, Joost Bekaert, Bart Laenens, Geert Vandenberghe, Jan Richter, Karsten Bubke, Jan Hendrik Peters, Koen Schreel, Mircea Dusa

JM3, Vol. 10, Issue 1, 013009, (January 2011) https://doi.org/10.1117/12.10.1117/1.3541779

KEYWORDS: Pellicles, Semiconducting wafers, Critical dimension metrology, Reticles, Apodization, Lithography, Photomasks, Transmittance, Optical proximity correction, Phase shifts

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Proceedings Article | 23 March 2010 Paper

Analysis and characterization of contamination in EUV reticles

Christian Holfeld, Obert Wood, Karsten Bubke, Jan-Hendrik Peters, Kornelia Dittmar, Tom Wallow, Uzodinma Okoroanyanwu, Torsten Fahr, Bruno La Fontaine

Proceedings Volume 7636, 76361Y (2010) https://doi.org/10.1117/12.847269

KEYWORDS: Reticles, Contamination, Reflectivity, Extreme ultraviolet lithography, Extreme ultraviolet, Chemical analysis, Carbon, Raman spectroscopy, Spectroscopy, Thin films

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A host of complementary imaging techniques (Scanning Electron Microscopy), surface analytical technique (Auger Electron Spectroscopy, AES), chemical analytical and speciation techniques (Grazing Incidence Reflectance Fourier-Transform Infrared Spectroscopy, GIR-FTIR; and Raman spectroscopy) have been assessed for their sensitivity and effectiveness in analyzing contamination on three EUV reticles that were contaminated to varying degrees. The first reticle was contaminated as a result of its exposure experience on the SEMATECH EUV Micro Exposure Tool (MET) at Lawrence Berkeley National Laboratories, where it was exposed to up to 80 hours of EUV radiation. The second reticle was a full-field reticle, specifically designed to monitor molecular contamination, and exposed to greater than 1600J/cm² of EUV radiation on the ASML Alpha Demo Tool (ADT) in Albany Nanotech in New York. The third reticle was intentionally contaminated with hydrocarbons in the Microscope for Mask Imaging and Contamination Studies (MIMICS) tool at the College of Nanoscale Sciences of State University of New York at Albany. The EUV reflectivities of some of these reticles were measured on the Advanced Light Source EUV Reflectomer at Lawrence Berkeley National Laboratories and PTB Bessy in Berlin, respectively. Analysis and characterization of thin film contaminants on the two EUV reticles exposed to varying degrees of EUV radiation in both MET and ADT confirm that the two most common contamination types are carbonization and surface oxidation, mostly on the exposed areas of the reticle, and with the MET being significantly more susceptible to carbon contamination than the ADT. While AES in both surface scanning and sputter mode is sensitive and efficient in analyzing thin contaminant films (of a few nanometers), GIRFTIR is sensitive to thick films (of order of a 100 nm or more on non-infra-red reflecting substrates), Raman spectroscopy is not compatible with analyzing such contaminants because of laser-induced evaporation of the contaminant film. SEM and EUV reflectometry are effective in quantifying the impact of contamination on imaging performance and reflectivity, respectively.

Proceedings Article | 20 March 2010 Paper

Monitoring reticle molecular contamination in ASML EUV Alpha Demo Tool

Aiqin Jiang, Kornelia Dittmar, Obert Wood, Thomas Laursen, Eric Gullikson, Bruno La Fontaine, Jan-Hendrik Peters, Christian Holfeld, Uzodinma Okoroanyanwu, Kevin Cummings, Torsten Fahr

Proceedings Volume 7636, 76360H (2010) https://doi.org/10.1117/12.847267

KEYWORDS: Reticles, Contamination, Extreme ultraviolet lithography, Reflectivity, Curium, Extreme ultraviolet, Semiconducting wafers, Carbon, Silicon, Tantalum

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Proceedings Article | 20 March 2010 Paper

Assessing EUV mask defectivity

Obert Wood, Karsten Bubke, Christian Holfeld, Carol Boye, Jan Hendrik Peters, Anna Tchikoulaeva, Uzodinma Okoroanyanwu, Isaac Lee, Sterling Watson, Paul Ackmann, Bruno La Fontaine, Phillip Lim, Sudhar Raghunathan, Bo Mu, Sumanth Kini

Proceedings Volume 7636, 76360J (2010) https://doi.org/10.1117/12.847348

KEYWORDS: Reticles, Inspection, Photomasks, Semiconducting wafers, Extreme ultraviolet, Defect detection, Line edge roughness, Scanning electron microscopy, Defect inspection, Optical lithography

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Proceedings Article | 4 March 2010 Paper

Experimental study of effect of pellicle on optical proximity fingerprint for 1.35 NA immersion ArF lithography

Bart Laenens, Jan Richter, Geert Vandenberghe, Joost Bekaert, Karsten Bubke, Koen Schreel, Jan Hendrik Peters, Lieve Van Look, Mircea Dusa

Proceedings Volume 7640, 76401Y (2010) https://doi.org/10.1117/12.848219

KEYWORDS: Pellicles, Semiconducting wafers, Reticles, Lithography, Apodization, Photomasks, Transmittance, Optical proximity correction, Phase shifts, Solids

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SPIE Journal Paper | 1 January 2009

Mask characterization for double patterning lithography

Karsten Bubke, Robert de Kruif, Jan Peters, Mircea Dusa, Brid Connolly

JM3, Vol. 8, Issue 01, 011004, (January 2009) https://doi.org/10.1117/12.10.1117/1.3023078

KEYWORDS: Photomasks, Reticles, Semiconducting wafers, Overlay metrology, Double patterning technology, Lithography, Image registration, Metrology, Critical dimension metrology, Extreme ultraviolet lithography

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Proceedings Article | 2 May 2008 Paper

Wafer based mask characterization for double patterning lithography

Jan Hendrik Peters, Robert de Kruif, Paul de Haas, Mircea Dusa, Karsten Bubke, Brid Connolly, Eddy van der Heijden, Gert-Jan Janssen, Jörg Fochler

Proceedings Volume 6792, 679204 (2008) https://doi.org/10.1117/12.798515

KEYWORDS: Reticles, Semiconducting wafers, Photomasks, Lithography, Double patterning technology, Overlay metrology, Photoresist processing, Image registration

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Proceedings Article | 30 October 2007 Paper

Mask characterization for double patterning lithography

Karsten Bubke, Brid Connolly, Mircea Dusa, Robert de Kruif, Joerg Fochler, Eric Cotte, Jan Hendrik Peters

Proceedings Volume 6730, 67301H (2007) https://doi.org/10.1117/12.747006

KEYWORDS: Photomasks, Reticles, Critical dimension metrology, Overlay metrology, Image registration, Semiconducting wafers, Lithography, Double patterning technology, Extreme ultraviolet lithography, Metrology

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Double patterning (DPT) lithography is seen industry-wide as an intermediate solution for the 32nm node if high index immersion as well as extreme ultraviolet lithography are not ready for a timely release for production. Apart from the obvious drawbacks of additional exposure, processing steps and the resulting reduced throughput, DPT possesses a number of additional technical challenges. This relates to, e.g., exposure tool capability, the actual applied process in the wafer fab but also to mask performance and metrology. In this paper we will address the mask performance. To characterize the mask performance in an actual DPT process, conventional parameters need to be re-evaluated. Furthermore new parameters might be more suitable to describe mask capability. This refers to, e.g., reticle to reticle overlay but also to CD differences between masks of a DPT reticle set. A DPT target of reticle to reticle induced overlay of 6nm, 3σ at mask level was proposed recently for the 32nm node. The results show that this target can be met. Besides that, local CD variations and local displacement become critical. Finally, the actual mask metrology for determination of these parameters might not be trivial and needs to be set up and characterized properly. In this paper we report on the performance of two-reticle sets based on a design developed to study the impact of mask global and local placement errors on a DPT dual line process. In a first step we focus on reticle to reticle overlay. The overlay between two masks evaluated for different wafer overlay targets is compared with measurements on actual resolution structures. In a second step, mask to mask CD variations are addressed. Off-target CD differences as well as variations of CD signatures on both reticles of a set are investigated. Finally, local CD variations and local displacements are examined. To this aim, local variations of adjacent structures on the reticle are characterized. The contribution of local effects to the overall CD and registration budget is estimated.

Proceedings Article | 20 October 2006 Paper

Image degradation due to phase effects in chromeless phase lithography

Jens Reichelt, K. Park, Rainer Pforr, Ralf Neubauer, Martin Sczyrba, Karsten Bubke, Ralf Ziebold

Proceedings Volume 6349, 634913 (2006) https://doi.org/10.1117/12.685983

KEYWORDS: Photomasks, Diffraction, Polarization, Etching, Lithography, Semiconducting wafers, Lithographic illumination, Printing, Phase shifts, Electroluminescence

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Proceedings Article | 19 May 2006 Paper

Pellicle-induced aberrations and apodization in hyper-NA optical lithography

Karsten Bubke, Christophe Pierrat, Eric Cotte, Martin Sczyrba, Benjamin Alles

Proceedings Volume 6283, 628318 (2006) https://doi.org/10.1117/12.681871

KEYWORDS: Pellicles, Apodization, Polarization, Photomasks, Sodium, Lithography, Monochromatic aberrations, Birefringence, Optical proximity correction, Dielectric polarization

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Proceedings Article | 23 March 2006 Paper

Defect printability study using EUV lithography

Adam Pawloski, Siegfried Schwarzl, Frank-Michael Kamm, Karsten Bubke, Falk Lehmann, Andreas Erdmann, Bruno La Fontaine, Thomas Graf, Christian Holfeld

Proceedings Volume 6151, 61510U (2006) https://doi.org/10.1117/12.656386

KEYWORDS: Photomasks, Semiconducting wafers, Printing, Photoresist processing, Extreme ultraviolet lithography, Image processing, Scanning electron microscopy, Extreme ultraviolet, Lithography, Projection systems

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Proceedings Article | 21 March 2006 Paper

Alternating PSM balancing characterization: a comparative study using AIMS and wafer print data

Rainer Pforr, Martin Sczyrba, Mario Hennig, Ralf Neubauer, Karsten Bubke, Roderick Köhle

Proceedings Volume 6154, 615448 (2006) https://doi.org/10.1117/12.656222

KEYWORDS: Photomasks, Scanners, Semiconducting wafers, Diffraction, Phase shifts, Etching, Cadmium sulfide, Critical dimension metrology, Polarization, Quartz

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Proceedings Article | 21 March 2006 Paper

Applicability of alternating phase shifting masks using polarized light

Karsten Bubke, Martin Sczyrba, Christophe Pierrat

Proceedings Volume 6154, 615449 (2006) https://doi.org/10.1117/12.656269

KEYWORDS: Photomasks, Polarization, Critical dimension metrology, Etching, Printing, Phase shifting, Semiconducting wafers, Lithographic illumination, Phase shifts, Fiber optic illuminators

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Proceedings Article | 15 March 2006 Paper

Mask defect printing mechanisms for future lithography generations

Karsten Bubke, Thomas Graf, Ingo Höllein, Silvio Teuber, Andreas Erdmann

Proceedings Volume 6154, 61541C (2006) https://doi.org/10.1117/12.655558

KEYWORDS: Photomasks, Printing, Lithography, Glasses, Extreme ultraviolet, Phase shifts, Polarization, Semiconducting wafers, Computer simulations, Near field

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Proceedings Article | 8 November 2005 Paper

The importance of being homogeneous: on the influence of illumination inhomogeneity on AIMS images

Karsten Bubke, Samuel Angonin, Martin Sczyrba, Arndt Dürr

Proceedings Volume 5992, 59922Y (2005) https://doi.org/10.1117/12.632098

KEYWORDS: Photomasks, Diffraction, Computer simulations, Printing, Semiconducting wafers, Solids, Image processing, Lithographic illumination, 193nm lithography, Data modeling

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Proceedings Article | 8 November 2005 Paper

Influence of organic contamination on photomask performance

Christian Chovino, Peter Dress, Karsten Bubke, Wolfgang Dieckmann, Stefan Helbig

Proceedings Volume 5992, 59923F (2005) https://doi.org/10.1117/12.632053

KEYWORDS: Photomasks, Reflection, Contamination, Reflectivity, Optical properties, Spectroscopy, Sensors, Natural surfaces, Reticles, Printing

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Proceedings Article | 20 October 2005 Paper

VUV spectrophotometry for photomasks characterization at 193 nm

Jork Leiterer, Norbert Kaiser, Silvio Teuber, Ingo Höllein, Karsten Bubke, Minghong Yang, Alexandre Gatto

Proceedings Volume 5965, 59651L (2005) https://doi.org/10.1117/12.625144

KEYWORDS: Photomasks, Polarization, Vacuum ultraviolet, Spectrophotometry, Lithography, Light sources, Transmittance, Computing systems, Diffraction, Resolution enhancement technologies

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Proceedings Article | 28 June 2005 Paper

Study of stress birefringence for 193-nm immersion photomasks

Karsten Bubke, Michael Selle, Silvio Teuber, Eric Cotte

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617034

KEYWORDS: Birefringence, Photomasks, Reticles, Pellicles, Jones calculus, Data modeling, Jones matrices, Distortion, Wave plates, Lead

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Proceedings Article | 28 June 2005 Paper

Determination of mask induced polarization effects on AltPSM mask structures

Karsten Bubke, Ingo Hollein, Silvio Teuber

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617432

KEYWORDS: Photomasks, Polarization, Diffraction, Diffraction gratings, Etching, Lithography, Quartz, Reactive ion etching, Semiconducting wafers, Binary data

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Proceedings Article | 28 June 2005 Paper

Aerial image based mask defect detection in dense array structures

Martin Sczyrba, Arndt Durr, Karsten Bubke, Mario Hennig, Rainer Pforr, Roderick Kohle

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617303

KEYWORDS: Photomasks, Printing, Semiconducting wafers, Inspection, Defect detection, Imaging arrays, Diffraction gratings, Diffraction, Microscopes, Optical filters

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Proceedings Article | 12 May 2005 Paper

Determination of mask-induced polarization effects occurring in hyper NA immersion lithography

Ralf Ziebold, Silvio Teuber, Ingo Hollein, Jan Peters, Karsten Bubke

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.598641

KEYWORDS: Polarization, Photomasks, Diffraction, Diffraction gratings, Binary data, Semiconducting wafers, Phase shifts, Immersion lithography, Manufacturing, Reflection

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Proceedings Article | 12 May 2005 Paper

Investigation of polarization effects on new mask materials

Ingo Hoellein, Silvio Teuber, Ute Buttgereit, Holger Seitz, Karsten Bubke, Hans Becker

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599688

KEYWORDS: Photomasks, Polarization, Diffraction, Phase shifts, Tantalum, Binary data, Etching, Lithography, Reticles, Absorbance

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Showing 5 of 25 publications

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