Ms. Katherina Babich Profile

Katherina Babich

at GlobalFoundries

SPIE Involvement:

Author

Publications (15)

Proceedings Article | 30 March 2017 Paper

Paper

Design space analysis of novel interconnect constructs for 22nm FDX technology

Tuhin Guha Neogi, Navneet Jain, Piyush Verma, David Permana, Andrey Lutich, Francois Weishbuch, Deepal Wehella-Gamage, Benoit Francois Claude Ramadout, Gowtham Vangara, Juhan Kim, Thomas Herrmann, Kai Sun, Katherina Babich, David Pritchard, Mahbub Rashed

Proceedings Volume 10148, 101480Z (2017) https://doi.org/10.1117/12.2258668

KEYWORDS: Monte Carlo methods, Diffusion, Statistical analysis, Lithography, Manufacturing, Diffractive optical elements, Optical lithography, Design for manufacturability, Silicon, Shape analysis

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Proceedings Article | 29 March 2006 Paper

Paper

Silicon containing polymer in applications for 193-nm high-NA lithography processes

Sean Burns, Dirk Pfeiffer, Arpan Mahorowala, Karen Petrillo, Alexandera Clancy, Katherina Babich, David Medeiros, Scott Allen, Steven Holmes, Michael Crouse, Colin Brodsky, Victor Pham, Yi-Hsiung Lin, Kaushal Patel, Naftali Lustig, Allen Gabor, Christopher Sheraw, Phillip Brock, Carl Larson

Proceedings Volume 6153, 61530K (2006) https://doi.org/10.1117/12.657197

KEYWORDS: Silicon, Reflectivity, Etching, Photoresist materials, Polymers, Lithography, Oxides, Silicon films, Reactive ion etching, Optical lithography

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Proceedings Article | 12 June 2003 Paper

Paper

Impact of thin resist processes on post-etch LER

Arpan Mahorowala, Dario Goldfarb, Karen Temple, Karen Petrillo, Dirk Pfeiffer, Katherina Babich, Marie Angelopoulos, Gregg Gallatin, Stacy Rasgon, Herbert Sawin, Scott Allen, Robert Lang, Margaret Lawson, Ranee Kwong, Kuang-Jung Chen, Wenjie Li, Pushkara Varanasi, Martha Sanchez, Hiroshi Ito, Gregory Wallraff, Robert Allen

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485168

KEYWORDS: Etching, Oxides, Scanning electron microscopy, Line edge roughness, Atomic force microscopy, Polymers, Plasma, Plasma etching, Chemistry, Photoresist processing

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Proceedings Article | 12 June 2003 Paper

Paper

Highly etch-selective spin-on bottom antireflective coating for use in 193-nm lithography and beyond

Dirk Pfeiffer, Arpan Mahorowala, Katherina Babich, David Medeiros, Karen Petrillo, Marie Angelopoulos, Wu-Song Huang, Scott Halle, Colin Brodsky, Scott Allen, Steven Holmes, Ranee Kwong, Robert Lang, Phillip Brock

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485178

KEYWORDS: Silicon, Etching, Lithography, Polymers, Oxides, Photoresist processing, Reflectivity, Silicon films, 193nm lithography, Bottom antireflective coatings

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Proceedings Article | 12 June 2003 Paper

Paper

Hardmask technology for sub-100-nm lithographic imaging

Katherina Babich, Arpan Mahorowala, David Medeiros, Dirk Pfeiffer, Karen Petrillo, Marie Angelopoulos, Alfred Grill, Vishnubhai Patel, Scott Halle, Timothy Brunner, Richard Conti, Scott Allen, Richard Wise

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485174

KEYWORDS: Etching, Silicon, Reflectivity, Lithography, Plasma, Interfaces, Photoresist processing, Electron beam lithography, Plasma enhanced chemical vapor deposition, Image resolution

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Proceedings Article | 14 September 2001 Paper

Paper

Novel Si-based composite thin films for 193/157-nm attenuated phase-shift mask (APSM) applications

S. Chey, Charles Guarnieri, Katherina Babich, Keith Pope, Dario Goldfarb, Marie Angelopoulos, Kenneth Racette, Michael Hibbs, Margaret Gibson, Kurt Kimmel

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435779

KEYWORDS: Composites, Thin films, Photomasks, Phase shifts, Etching, Manufacturing, Dry etching, Oxygen, Transmittance, Metals

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Proceedings Article | 14 September 2001 Paper

Paper

When is bilayer thin-film imaging suitable: comparison with single-layer resists

Scott Halle, Alan Thomas, Michael Armacost, Timothy Dalton, Xiaochun Chen, Scott Bukofsky, Oliver Genz, Zhijian Lu, Shahid Butt, Zheng Chen, Richard Ferguson, Eric Coker, Robert Leidy, Qinghuang Lin, Arpan Mahorowala, Katherina Babich, Karen Petrillo, Marie Angelopoulos, Mark Ignatowicz, Bang Bui

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435797

KEYWORDS: Etching, Photomasks, Dielectrics, Lithography, Oxides, Thin films, Silicon, Reactive ion etching, Photoresist processing, Scanning electron microscopy

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Proceedings Article | 20 August 2001 Paper

Paper

Tunable antireflective coatings with built-in hard mask properties facilitating thin-resist processing

Arpan Mahorowala, Katherina Babich, Karen Petrillo, John Simons, Marie Angelopoulos, Vishnubhai Patel, Alfred Grill, Scott Halle, Richard Conti, ChungHsi Wu, Richard Wise, Linda Chen, Alan Thomas, B. Lee, Oliver Genz

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436710

KEYWORDS: Photomasks, Etching, Silicon, Reflectivity, Electron beam lithography, Interfaces, Lithography, Oxides, Antireflective coatings, Dielectrics

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Patterning sub-150 nm features in dielectric stacks using single layer resist processes in conjunction with organic anti-reflective coatings (ARCs) is becoming very difficult. Typical organic ARC-open etch processes suffer from poor ARC-to-resist selectivities (~0.7), and are accompanied by critical dimension (CD) losses. The resist remaining is often not sufficient to prevent artifacts such as substrate microrevicing during subsequent etches. PECVD-Deposited titanium nitride and silicon oxynitride films have been investigated as ARC layers but their basic nature has caused residue formation at the resist/ARC interface. We have developed a PECVD-deposited material, TERA (Tunable Etch-Resistant ARC) that acts as an ARC at 248 nm and 193 nm wavelengths and provides excellent etch selectivity to resist surpassing those attained with organic ARCs. In addition, this material demonstrates excellent hard mask properties for subsequent dielectric etch steps. The optical properties of these films can be easily tuned to minimize substrate reflectance at either imaging wavelength by controlling the precursor composition and deposition conditions. The films are compatible with 248 nm and 193 nm resists - no footing, undercut or residue is observed during patterning. The films can be etched selectively to resist (selectivity ~2.5) that translates to less resist consumption during th ARC-open etch. Compared to resists, TERA demonstrates better etch resistance while patterning dielectric stacks - the silicon oxide-to-TERA Selectivity exceeds 8. In this paper, the excellent optical tunability and substrate reflectivity control achieved with TERA are discussed. Clean lithography using 248 nm, 193 nm and e- beam resists is shown. The etch characteristics of TERA in fluorocarbon and halogen-based plasma chemistries are discussed. Finally, the formation of 135 nm and 120 nm deep trench patterns in thick dielectric stacks using TERA in conjunction with commercial 248 nm and 193 nm resists, respectively is demonstrated. The extendability of this approach to pattern silicon without roughening or microrevicing using sub-200 nm thick resists is motivated.

Proceedings Article | 22 January 2001 Paper

Paper

Evaluation of molybdenum silicide for use as a 193-nm phase-shifting absorber in photomask manufacturing

Michael Hibbs, Masao Ushida, Katherina Babich, Hideaki Mitsui, Anatoly Bourov

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410721

KEYWORDS: Photomasks, Phase shifts, Inspection, Lithography, Etching, Reflectivity, Attenuators, Molybdenum, Manufacturing, Excimer lasers

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Proceedings Article | 11 June 1999 Paper

Paper

High-resolution 248-nm bilayer resist

Qinghuang Lin, Karen Petrillo, Katherina Babich, Douglas LaTulipe, David Medeiros, Arpan Mahorowala, John Simons, Marie Angelopoulos, Gregory Wallraff, Carl Larson, Debra Fenzel-Alexander, Ratnam Sooriyakumaran, Gregory Breyta, Phillip Brock, Richard Di Pietro, Donald Hofer

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350207

KEYWORDS: Silicon, Etching, Polymers, Reactive ion etching, Lithography, Imaging systems, Resistance, Optical properties, Photomasks, Silicon films

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Proceedings Article | 29 June 1998 Paper

Paper

DUV stability of carbon films for attenuated phase-shift mask applications

Alessandro Callegari, Katherina Babich, Fuad Doany, Frank Cardone, Sampath Purushothaman

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310768

KEYWORDS: Deep ultraviolet, Transmittance, Oxygen, Carbon, Lamps, Refraction, Excimer lasers, Ultraviolet radiation, Diffusion, Sputter deposition

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Proceedings Article | 29 June 1998 Paper

Paper

Positive bilayer resists for 248- and 193-nm lithography

Ratnam Sooriyakumaran, Gregory Wallraff, Carl Larson, Debra Fenzel-Alexander, Richard Di Pietro, Juliann Opitz, Donald Hofer, Douglas LaTulip, John Simons, Karen Petrillo, Katherina Babich, Marie Angelopoulos, Qinghuang Lin, Ahmad Katnani

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312411

KEYWORDS: Silicon, Polymers, Lithography, Etching, Plasma etching, Chemistry, Plasma, Deep ultraviolet, Imaging systems, Standards development

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Proceedings Article | 29 June 1998 Paper

Paper

Extension of 248-nm optical lithography: a thin film imaging approach

Qinghuang Lin, Ahmad Katnani, Timothy Brunner, Charlotte DeWan, Cindy Fairchok, Douglas LaTulipe, John Simons, Karen Petrillo, Katherina Babich, David Seeger, Marie Angelopoulos, Ratnam Sooriyakumaran, Gregory Wallraff, Donald Hofer

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312417

KEYWORDS: Silicon, Reactive ion etching, Etching, Polymers, Photomasks, Lithography, Thin films, Line edge roughness, Optical lithography, Silicon films

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Proceedings Article | 29 June 1998 Paper

Paper

Effects of underlayer on performance of bilayer resists for 248-nm lithography

Katherina Babich, Alessandro Callegari, Karen Petrillo, John Simons, Douglas LaTulipe, Marie Angelopoulos, Qinghuang Lin

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312348

KEYWORDS: Reflectivity, Optical properties, Refractive index, Silicon, Refraction, Carbon, Thin films, Interfaces, Lithography, Critical dimension metrology

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Proceedings Article | 7 July 1997 Paper

Paper

Optical characterization of attenuated phase shifters

Alessandro Callegari, Katherina Babich

Proceedings Volume 3050, (1997) https://doi.org/10.1117/12.275940

KEYWORDS: Phase shifts, Phase measurement, Reflectivity, Quartz, Carbon, Transmittance, Refraction, Interferometers, Refractive index, Crystals

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Showing 5 of 15 publications

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