Ms. Kathleen A. Gehoski Profile

Kathleen A. Gehoski

Research & Development Engineer at Penn State Univ

SPIE Involvement:

Author

Publications (17)

Proceedings Article | 22 March 2007 Paper

The use of a black pigment polyimide, DARC300, as a light absorber on an optical sensor

K. Gehoski, P. Holm, K. Boggess, C. Scott

Proceedings Volume 6519, 65194F (2007) https://doi.org/10.1117/12.720552

KEYWORDS: Semiconducting wafers, Stray light, Optoelectronics, Scanning electron microscopy, Thin film coatings, Metals, Photomicroscopy, Optical sensors, Channel projecting optics, Fabry–Perot interferometers

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Proceedings Article | 15 March 2007 Paper

An electrical defectivity characterization of wafers imprinted with step and flash imprint lithography

W. Dauksher, N. Le, K. Gehoski, E. Ainley, K. Nordquist, N. Joshi

Proceedings Volume 6517, 651714 (2007) https://doi.org/10.1117/12.712376

KEYWORDS: Semiconducting wafers, Resistance, Lithography, Scanning electron microscopy, Etching, Wafer-level optics, Particles, Optical inspection, Manufacturing, Quartz

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Proceedings Article | 24 March 2006 Paper

Imprint technology: A potential low-cost solution for sub-45nm device applications

Ngoc Le, William Dauksher, Kathy Gehoski, Kevin Nordquist, Eric Ainley, Pawitter Mangat

Proceedings Volume 6151, 61512K (2006) https://doi.org/10.1117/12.657488

KEYWORDS: Etching, Lithography, Oxides, Critical dimension metrology, Nanoimprint lithography, Scanning electron microscopy, Semiconducting wafers, Printing, Silicon, Plasma

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Proceedings Article | 23 March 2006 Paper

Evaluation of FIB and e-beam repairs for implementation on step and flash imprint lithography templates

S. Young, W. Dauksher, K. Nordquist, E. Ainley, K. Gehoski, A. Graupera, M. Moriarty

Proceedings Volume 6151, 61511D (2006) https://doi.org/10.1117/12.659529

KEYWORDS: Quartz, Chromium, Etching, Scanning electron microscopy, Photomasks, Atomic force microscopy, Image processing, Opacity, Semiconducting wafers, Lithography

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Proceedings Article | 6 May 2005 Paper

Indium tin oxide template development for step and flash imprint lithography

Kathleen Gehoski, Douglas Resnick, William Dauksher, Kevin Nordquist, Eric Ainley, Mark McCord, Mark Raphaelian, Harald Hess

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.606102

KEYWORDS: Chromium, Inspection, Etching, Lithography, Electron beams, Oxides, Indium, Tin, Quartz, Electron beam lithography

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Proceedings Article | 6 May 2005 Paper

Development of an etch-definable lift-off process for use with step and flash imprint lithography

Ngoc Le, Kathleen Gehoski, William Dauksher, Jeffrey Baker, Doug Resnick, Laura Dues

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.605932

KEYWORDS: Etching, Lithography, Oxides, Metals, Aluminum, Semiconducting wafers, Plasmas, Scanning electron microscopy, Silicon, Semiconductors

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Along with other Next Generation Lithography (NGL) methods, imprint lithography has been included on the International Roadmap for Semiconductors (ITRS) for the 32 nm node, predicted to be production-ready by 20131. Step and Flash Imprint Lithography (S-FIL) is one of the imprinting technologies being pursued due to its impressive imprinting capabilities, where imprinted features of less than 30 nm have been demonstrated. Unlike optical-based lithography, S-FIL uses techniques similar to that of contact printing, and thereby does not require complex and expensive optics and light sources to create images. Couple this with a reliable pattern transfer, and S-FIL could become a contender as a viable NGL technology. Similar to other imprint lithography systems, S-FIL printed features possess a residual layer several hundred angstroms thick, which requires a breakthrough etch prior to etching a subsequent layer. Of a greater concern, however, is the etch barrier used as the imaging layer for S-FIL. The present silicon content is limited to approximately nine percent, and the formulation is optimized for dispensing and achieving mechanical properties for the imprinting process. As a result, oxygen-based plasmas typically used for pattern transferring more conventional bi-layer structures are not compatible with the current S-FIL resist stack, and therefore pose a challenge from an etch perspective. The development of a recent etch process incorporating an ammonia-based plasma was a key enabler for pattern transfer, and ongoing development is being done to improve critical dimensions (CD). In this study, we examined a lift-off process using S-FIL. The material stacks with and without a "glue" layer will be discussed, and the challenges from imprinting to etch will be shared. Finally, the lift-off process will be used to demonstrate fabrication of a surface acoustic wave (SAW) device in addition to demonstrating patterning of a non-reactive metallization scheme such as Ti/Au.

Proceedings Article | 20 May 2004 Paper

Sub-80-nm contact hole patterning using Step and Flash Imprint Lithography

David Mancini, Ngoc Le, Kathleen Gehoski, Steven Young, William Dauksher, Kevin Nordquist, Douglas Resnick

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.537382

KEYWORDS: Etching, Lithography, Silicon, Critical dimension metrology, Semiconducting wafers, Scanning electron microscopy, Quartz, Oxides, Photomasks, Printing

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Proceedings Article | 20 May 2004 Paper

Evaluation of the Imprio 100 Step and Flash Imprint Lithography tool

Kathleen Gehoski, David Mancini, Douglas Resnick

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.537380

KEYWORDS: Semiconducting wafers, Etching, Optical alignment, Lithography, Lamps, Nanoimprint lithography, Scanning electron microscopy, Overlay metrology, Manufacturing, Mercury

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Proceedings Article | 20 May 2004 Paper

Mesoscale modeling for SFIL simulating polymerization kinetics and densification

Ryan Burns, Stephen Johnson, Gerard Schmid, Eui Kim, Michael Dickey, Jason Meiring, Sean Burns, Nicholas Stacey, C. Grant Willson, Diana Convey, Yi Wei, Peter Fejes, Kathleen Gehoski, David Mancini, Kevin Nordquist, William Dauksher, Douglas Resnick

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.536216

KEYWORDS: Etching, Polymerization, Molecules, Monte Carlo methods, Finite element methods, Lithography, Ultraviolet radiation, Molecular interactions, Scanning electron microscopy, Optical lithography

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Proceedings Article | 17 December 2003 Paper

Template fabrication for sub-80-nm contact hole patterning using step and flash imprint lithography

David Mancini, Kathleen Gehoski, William Dauksher, Kevin Nordquist, Douglas Resnick, Philip Schumaker, Ian McMackin

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518307

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Printing, Lithography, Etching, Photoresist processing, Cadmium, Scanning electron microscopy, Quartz, Electron beam lithography

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Proceedings Article | 16 June 2003 Paper

Analysis of critical dimension uniformity for Step and Flash imprint lithography

David Mancini, Kathleen Gehoski, William Dauksher, Kevin Nordquist, Douglas Resnick, Philip Schumaker, Ian McMackin

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484923

KEYWORDS: Semiconducting wafers, Lithography, Critical dimension metrology, Scanning electron microscopy, Quartz, Etching, Cadmium, Photomasks, Chromium, Photoresist processing

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Proceedings Article | 27 December 2002 Paper

Critical dimension and image placement issues for step and flash imprint lithography templates

Kevin Nordquist, David Mancini, William Dauksher, Eric Ainley, Kathleen Gehoski, Douglas Resnick, Zorian Masnyj, Pawitter Mangat

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467753

KEYWORDS: Quartz, Chromium, Distortion, Overlay metrology, Lithography, Image processing, Photomasks, Critical dimension metrology, Fabrication, Etching

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SPIE Journal Paper | 1 October 2002

High resolution templates for step and flash imprint lithography

Douglas Resnick, William Dauksher, David Mancini, Kevin Nordquist, Eric Ainley, Kathleen Gehoski, Jeff Baker, Todd Bailey, B. Choi, Stephen Johnson, S. Sreenivasan, John Ekerdt, C. Grant Willson

JM3, Vol. 1, Issue 03, (October 2002) https://doi.org/10.1117/12.10.1117/1.1508410

KEYWORDS: Lithography, Scanning electron microscopy, Glasses, Printing, Overlay metrology, Distortion, Chromium, Photomasks, Solids, Defect inspection

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Proceedings Article | 30 July 2002 Paper

Bilayer and trilayer lift-off processing for i-line and DUV lithography

Laura Popovich, Kathleen Gehoski, David Mancini, Douglas Resnick

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474641

KEYWORDS: Photoresist processing, Metals, Deep ultraviolet, Lithography, Semiconducting wafers, Critical dimension metrology, Optical lithography, Reflectivity, Resistance, Etching

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Proceedings Article | 24 July 2002 Paper

New methods for fabricating step and flash imprint lithography templates

Douglas Resnick, Todd Bailey, David Mancini, Kevin Nordquist, William Dauksher, Eric Ainley, A. Talin, Kathleen Gehoski, Jeff Baker, Byung Choi, Stephen Johnson, Matthew Colburn, Mario Meissl, S. Sreenivasan, John Ekerdt, C. Grant Willson

Proceedings Volume 4608, (2002) https://doi.org/10.1117/12.437269

KEYWORDS: Etching, Chromium, Oxides, Semiconducting wafers, Quartz, Glasses, Scanning electron microscopy, Lithography, Printing, Photomasks

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Proceedings Article | 1 July 2002 Paper

High-resolution templates for step and flash imprint lithography

Douglas Resnick, William Dauksher, David Mancini, Kevin Nordquist, Eric Ainley, Kathleen Gehoski, Jeff Baker, Todd Bailey, Byung Choi, Stephen Johnson, S. Sreenivasan, John Ekerdt, C. Grant Willson

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472293

KEYWORDS: Etching, Quartz, Chromium, Scanning electron microscopy, Photomasks, Semiconducting wafers, Glasses, Lithography, Printing, Oxides

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Proceedings Article | 3 October 2001 Paper

Low surface energy polymeric release coating for improved contact print lithography

David Mancini, Douglas Resnick, Kathleen Gehoski, Laura Popovich, Daniel Chang

Proceedings Volume 4562, (2001) https://doi.org/10.1117/12.458339

KEYWORDS: Photomasks, Coating, Atrial fibrillation, Semiconducting wafers, Printing, Lithography, Polymers, Scanning electron microscopy, Photoresist materials, Particles

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Contact printing has been used for decades in many various lithography applications in the microelectronic industry. While vacuum contact printing processes offer sub-micron resolution and high throughput, they often suffer from some important drawbacks. One of the most common problems is degradation in both resolution and defect density which occurs when the same mask si used for multiple exposures without frequent mask cleans. This is largely due to the relatively high surface energy of both quartz and chrome and the tendency of most photoresists to adhere to these surfaces. As a result, when a mask and wafer are pressed into intimate contact, resist will tend to stick to the mask creating a defect on the wafer, effectively propagating defects to subsequent wafers. In this study, DuPont Teflon AF 1601S is used as a photomask coating and evaluated for its ability to act as a release agent and reduce defects while maintaining resolution for multiple exposures. Teflon AF is an amorphous, transparent, low surface energy, polymeric material that can be spin coated into a thin conformal film. Tests have shown that when using an uncoated mask in vacuum contact, resolution of 0.75 micrometers dense lines is severely degraded after less than 10 consecutive exposures. However, when the mask is coated, 0.75 micrometers dense lines were successfully resolved using vacuum contact for over 200 exposures without cleaning. In addition, it has been demonstrated that Teflon AF coatings impart to a mask a self-cleaning capability, since particles tend to stick to the photoresist rather than the mask. A coated mask, which was purposefully contaminated with particulates, resolved 0.75 micrometers dense lines on all but the first wafer of a series of 25 consecutive exposures. The patented mask releases layer process has successfully been demonstrated with a positive novolak resist. Additional data which describes the system chemistry, dilution and coating process, and film morphology are also presented.

Showing 5 of 17 publications

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